MOSFET 30A 450～ 450～500V PD4M441H/440H PD4M441H P2H4M441H PD4M440H P2H4M440H P2H4M441H/440H 108.0 108.0 Approximate Weight :220g Approximate Weight :220g 最大定格 Maximum Ratings Rating Symbol VDSS Drain-Source Voltage VGSS Gate-Source Voltage Duty=50% Continuous Drain Current D.C. Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range RMS Isolation Voltage 1 Mounting Torque Grade PD4M441H/P2H4M441H PD4M440H/P2H4M440H Unit 450 500 V VGS=0V 20 V ID 30 21 c=25 c=25 A IDM 60 c=25 A PD 230 c=25 W Tjw 40 +150 Tstg 40 +125 2000 Viso Ftor 3.0 2.0 ,AC1 Terminals to Base, AC 1 min . Module Base to Heat sink Bus bar to Main Terminals V N m 30 20 10 0 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) 8 4 0 -40 16 6 4 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) 8 4 50 SOURCE CURRENT IS (A) 500 100 50 0 40 80 120 160 200 TOTAL GATE CHRAGE Qg (nC) 240 10 40 30 20 2 5 10 20 DRAIN CURRENT ID (A) 50 0 0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE VSD (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 1 200 100 50 20 200 0.5 0.2 0.05 2 500 10 20 5 10 20 50 100 SERIES GATE IMPEDANCE RG ( ) 1 0.1 60 200 160 2 0 100 0 40 80 120 JUNCTION TEMPERATURE Tj ( ) 5 12 1000 SWITCHING TIME t (ns) 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) SWITCHING TIME t ( s) GATE TO SOURCE VOLTAGE VGS (V) 8 2 DRAIN CURRENT ID (A) 0 12 16 10 CAPACITANCE C (nF) 2 0 12 12 0 4 REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) 0 6 10 200 100 50 20 10 5 1.6 0 100 200 300 400 -dis/dt (A/ s) 500 600 2 10 0 5 2 10 -1 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 5 2 1 0.5 0.2 1 2 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] DRAIN CURRENT ID (A) 40 16 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 50 2 10 0 5 2 10 -1 5 2 10 -2 -5 10