MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension(mm) * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible TYPICAL APPLICATIONS * Power Supply for the Communications and the Induction Heating Approximate Weight : 220g MAXMUM RATINGS Ratings Symbol PD4M441H PD4M440H Unit Drain-Source Voltage (VGS=0V) Gate - Source Voltage VDSS VGSS 450 500 V V Continuous Drain Current Duty=50% D.C. +/ - 20 30 (Tc=25°C) 21 (Tc=25°C) 60 Tc=25°C) 230 Tc=25°C) -40 to +150 -40 to +125 2000 3.0 2.0 ID Pulsed Drain Current Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Isolation Voltage Terminals to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals IDM PD Tjw Tstg VISO FTOR ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test Condition Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage Gate-Source Leakage Current Static Drain-Source On-Resistance Drain-Source On-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS(th) IGSS rDS(on) VDS(on) gfs Cies Coss Crss td(on) tr td(off) tf Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery IS ISM VSD trr Qr THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Case Rth(j-c) Thermal Resistance, Case to Heatsink Rth(c-f) A W °C °C V N•m Min. Typ. Max. Unit 2.0 - 3.2 190 3.3 27 5.2 1.1 0.18 100 60 180 50 1.0 4.0 4.0 1.0 210 3.5 - mA VDS=VDSS,VGS=0V Tj=125°C, VDS=VDSS,VGS=0V VDS=VGS, ID=1mA VGS=+/- 20V,VDS=0V VGS=10V, ID=15A VGS=10V, ID=15A VDS=15V, ID=15A VDS=25V,VGS=0V,f=1MHz VDD= 1/2VDSS ID=15A VGS= -5V, +10V RG= 7ohm FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition A V µA m-ohm V S nF nF nF ns Min. Typ. Max. - 100 0.15 21 60 1.8 - Unit A A V ns µC Test Condition Min. Typ. Max. Unit MOS FET Diode Mounting surface flat, smooth, and greased - - 0.56 2.0 0.1 °C/W D.C. IS=30A IS=30A, -dis/dt=100A/µs PD4M44xH 108.0 6V 30 20 VGS=5V 10 4V 2 4 6 8 10 DRAIN TO SOURCE VOLTAGE VDS (V) VGS=0V f=1kHz 8 Ciss 6 4 Coss Crss 1 2 5 10 20 50 DRAIN TO SOURCE VOLTAGE VDS (V) RG=7Ω VDD=250V TC=25℃ 80μs Pulse Test td(on) 100 tr 50 tf 10 1 2 5 10 20 DRAIN CURRENT ID (A) 50 Fig. 10 Maximum Safe Operating Area TC=25℃ Tj=150℃MAX Single Pulse Operation in this area 100 is limited by RDS (on) 8 4 20 100μs 0 40 80 120 160 200 TOTAL GATE CHRAGE Qg (nC) 10ms 0.5 0.2 240 1 0.5 toff DC 1 2 −441H −440H 5 10 20 50 100 200 500 1000 DRAIN TO SOURCE VOLTAGE VDS (V) ton 0.2 40 30 Tj=125℃ Tj=25℃ 20 0 0.05 250μs Pulse Test 0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE VSD (V) Fig. 11-1 Normalized Transient Thermal impedance(MOSFET) Fig. 11-2 Normalized Transient Thermal impedance(DIODE) 1 ID=15A VDD=250V TC=25℃ 80μs Pulse Test 5 2 5 10 20 50 100 SERIES GATE IMPEDANCE RG (Ω ) 200 IS=30A IS=15A Tj=150℃ 500 200 trr 100 50 IR 20 10 5 1.6 0 100 200 300 400 -dis/dt (A/μs) 500 600 2 10 0 5 2 10 -1 Per Unit Base Rth(j-c)=0.56℃/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 1ms 2 160 Fig. 9 Typical Reverse Recovery Characteristics 10 5 0 40 80 120 JUNCTION TEMPERATURE Tj ( ℃) 0.1 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] DRAIN CURRENT ID (A) 10μs 0 -40 2 200 50 10A ID=20A 10 20 15A 4 VDD=100V 250V 400V 60 SOURCE CURRENT IS (A) td(off) 8 Fig. 6 Typical Switching Time Fig. 6 Vs. Series Gate impedance 50 200 ID=30A 12 16 Fig. 8 Typical Source-Drain Diode Forward Fig. 8 Characteristics 500 SWITCHING TIME t (ns) 4 8 12 GATE TO SOURCE VOLTAGE VGS (V) 12 0 100 Fig. 7 Typical Switching Time Fig. 7 Vs. Drain Current 1000 0 16 GATE TO SOURCE VOLTAGE VGS (V) CAPACITANCE C (nF) 10 0 10A 2 Fig. 5 Typical Gate Charge Fig. 5 Vs. Gate-Source Voltage 12 2 15A 0 12 Fig. 4 Typical Capacitance Fig. 4 Vs. Drain-Source Voltage 4 VGS=10V 250μs Pulse Test 16 SWITCHING TIME t (μs) 0 ID=30A 6 NORMALIZED TRANSIENT THERMAL IMPEDANCE [rth(j-c) / Rth(j-c)] 0 TC=25℃ 250μs Pulse Test 8 DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) 10V 40 Fig. 3 Typical Drain-Source On Voltage Fig. 3 Vs. Junction Temperature DRAIN TO SOURCE ON VOLTAGE VDS (on)(V) TC=25℃ 250μs Pulse Test 50 DRAIN CURRENT ID (A) Fig. 2 Typical Drain-Source On-Voltage Fig. 2 Vs. Gate-Source Voltage REVERSE RECOVERY TIME trr (ns) REVERSE CURRENT IR (A) Fig. 1 Typical Output Characteristics 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1 2 10 0 5 2 10 -1 Per Unit Base Rth(j-c)=2.0℃/W 1 Shot Pulse 5 2 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 PULSE DURATION t (s) 10 0 10 1