Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110 High Speed Power Switching Rev.1.10 Sep 05, 2011 Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2)) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source 4 3 2 1 4 S2 S2 S2 5 6 7 MOS1 3 2 1 (Bottom View) MOS2 and Schottky Barrier Diode Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol MOS1 MOS2 Unit VDSS VGSS ID 25 ±20 15 60 15 5 3.1 10 150 –55 to +150 25 ±20 40 160 40 14 24.5 25 150 –55 to +150 V V A A A A mJ W °C °C ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc=25C R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Page 1 of 10 RJK0215DPA Preliminary Electrical Characteristics • MOS1 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 25 — — 1.2 — — — — — — — — — — — Typ — — — — 7.6 10.5 30 810 130 74 1.2 6.2 2.8 1.9 7.3 Max — ±0.1 1 2.5 9.2 13.7 — 1130 — — 2.4 — — — — Unit V A A V m m S pF pF pF nC nC nC ns — — — — — 5.3 33.9 5.4 0.84 20 — — — 1.10 — ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 25 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 7.5 A, VGS = 10 V Note4 ID = 7.5 A, VGS = 4.5 V Note4 ID = 7.5 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1MHz VDD = 10 V VGS = 4.5 V ID = 15 A VGS =10 V, ID = 7.5 A VDD 10 V RL = 1.33 Rg = 4.7 IF = 15 A, VGS = 0 Note4 IF =15 A, VGS = 0 diF/ dt = 100 A/s Notes: 4. Pulse test R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Page 2 of 10 RJK0215DPA Preliminary • MOS2 (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) Fall time Schottky Barrier diode forward voltage tf VF Body–drain diode reverse recovery time trr Min 25 — — 1.2 — — — — — — — — — — — — — Typ — — — — 2.5 3.7 77 2500 460 260 1.9 17.5 7.6 4.6 11.1 7.3 49.1 Max — ±0.1 1 2.5 3.0 4.8 — 3500 — — 3.8 — — — — — — Unit V A mA V m m S pF pF pF nC nC nC ns ns ns — — — 7.6 0.39 24 — — — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 25 V, VGS = 0 VDS = 10 V, I D =1 mA ID =20 A, VGS = 10 V Note4 ID = 20 A, VGS = 4.5 V Note4 ID = 20 A, VDS = 5 V Note4 VDS = 10 V VGS = 0 f = 1MHz VDD = 10 V VGS = 4.5 V ID = 40 A VGS = 10 V, ID = 20 A VDD 10 V RL = 0.5 Rg = 4.7 IF = 2 A, VGS = 0 Note4 IF = 40 A, VGS = 0 diF/ dt = 100 A/s Notes: 4. Pulse R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Page 3 of 10 RJK0215DPA Preliminary Main Characteristics • MOS1 Power vs. Temperature Derating Maximum Safe Operation Area 1000 Drain Current ID (A) Channel Dissipation Pch (W) 16 12 8 4 0 50 100 150 10 10 10 ms 10 1m 0 200 DC Operation in Op er this area is at ion limited by RDS(on) 1 10 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 3.3 V Pulse Test Drain Current ID (A) 3.2 V 16 12 8 3.0 V 4 VDS = 5 V Pulse Test 16 12 8 4 25°C Tc = 75°C VGS = 2.8 V 4 6 –25°C 8 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current Pulse Test 150 100 ID = 10 A 50 5A 2A 5 10 15 20 Gate to Source Voltage VGS (V) R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 2 200 0 100 Case Temperature Tc (°C) 4.5 V 10 V 0 μs μs s Tc = 25 °C 0.1 1 shot Pulse 0.1 1 20 Drain Current ID (A) 100 100 Pulse Test 30 10 VGS = 4.5 V 10 V 3 1 0.1 0.3 1 3 10 30 100 Drain Current ID (A) Page 4 of 10 RJK0215DPA Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 20 10000 Pulse Test ID = 2 A, 5 A, 10 A 3000 12 Capacitance C (pF) 16 VGS = 4.5 V 2 A, 5 A, 10 A 8 10 V 4 0 25 50 75 300 Coss 100 Crss VGS = 0 f = 1 MHz 10 20 25 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage VGS 40 16 VDD = 20 V 10 V 30 12 VDS 20 8 10 4 VDD = 20 V 10 V 0 4 8 12 0 20 16 20 Reverse Drain Current IDR (A) 20 ID = 15 A 0 10 0 100 125 150 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Ciss 30 0 –25 50 1000 10 V 16 Pulse Test 5V 12 8 VGS = 0, –5 V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nc) Repetitive Avalanche Energy E AR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 5 4 3 2 1 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Page 5 of 10 RJK0215DPA Preliminary 3 1 D=1 0.5 0.3 0.2 θch − c(t) = γs (t) • θch − c θch − c = 12.5°C/W, Tc = 25°C 0.1 0.1 0.05 PDM D= 2 0.0 1 0 . 0 ho tp ul se 0.03 PW T PW T 1s Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 10% tr 90% td(off) tf Page 6 of 10 RJK0215DPA Preliminary • MOS2 and Schottky Barrier Diode Power vs. Temperature Derating Maximum Safe Operation Area 30 20 10 0 50 100 150 200 0 10 1 m ms s Operation in this area is limited by RDS(on) 1 10 Typical Output Characteristics Typical Transfer Characteristics 50 3.1 V Pulse Test Drain Current ID (A) 2.9 V 30 20 2.7 V 10 VDS = 5 V Pulse Test 40 30 20 10 25°C Tc = 75°C –25°C VGS = 2.5 V 2 4 6 8 0 10 1 2 3 5 4 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 160 Pulse Test 120 80 ID = 20 A 40 10 A 5A 5 10 15 20 Gate to Source Voltage VGS (V) R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 100 Drain to Source Voltage VDS (V) 40 0 μs Case Temperature Tc (°C) 4.5 V 10 V 0 μs 10 Tc = 25 °C 0.1 1 shot Pulse 0.1 1 50 Drain Current ID (A) 10 10 100 ion at er Op Drain Current ID (A) 1000 DC Channel Dissipation Pch (W) 40 10 VGS = 4.5 V 3 10 V 1 0.3 Pulse Test 0.1 1 3 10 30 100 300 1000 Drain Current ID (A) Page 7 of 10 RJK0215DPA Preliminary Static Drain to Source On State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10 10000 Pulse Test 3000 ID = 5 A, 10 A, 20 A 6 VGS = 4.5 V 2 0 25 50 75 Coss 300 Crss 100 10 0 100 125 150 VGS = 0 f = 1 MHz 10 20 25 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Reverse Drain Current vs. Source to Drain Voltage 20 ID = 40 A VGS 40 16 VDD = 20 V 10 V 30 12 VDS 20 8 10 4 VDD = 20 V 10 V 0 0 Ciss 1000 30 12 24 36 0 60 48 50 Reverse Drain Current IDR (A) 0 –25 Drain to Source Voltage VDS (V) 5 A, 10 A, 20 A 10 V Gate to Source Voltage VGS (V) 4 50 Capacitance C (pF) 8 10 V 40 Pulse Test 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Gate Charge Qg (nc) Repetitive Avalanche Energy E AR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 30 24 18 12 6 0 25 50 75 100 125 150 Channel Temperature Tch (°C) R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Page 8 of 10 RJK0215DPA Preliminary 3 1 D=1 0.5 0.3 0.2 0.1 θch − c(t) = γs (t) • θch − c θch − c = 5.0°C/W, Tc = 25°C 0.1 0.05 PDM D= ho tp ul se 2 0.0 01 0. 0.03 0.01 10 μ PW T PW T 1s Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 100 μ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 10% tr 90% td(off) tf Page 9 of 10 RJK0215DPA Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DD-A 5.1 ± 0.2 Previous Code WPAK-D(2)V MASS[Typ.] Unit : mm 0.07g 0.5 ± 0.15 Package Name WPAK-D(2) 0.8 Max 0.4 ± 0.06 2.2 ± 0.2 0.935 ± 0.15 2.9 ± 0.2 0.5 ± 0.15 0.2 Typ 1.27 Typ (0.05) 1.1 ± 0.2 0.4 ± 0.15 0.05Max 0Min Stand-off 0.545Typ 0.45 ± 0.1 (0.6) (0.6) 0.9 ± 0.15 +0.1 −0.2 6.1 5.9 +0.1 −0.3 3.9 ± 0.2 4.9 ± 0.1 (Ni/Pd/Au plating) Ordering Information Orderable Part Number RJK0215DPA-00-J53 Quantity 3000 pcs R07DS0207EJ0110 Rev.1.10 Sep 05, 2011 Shipping Container Taping Page 10 of 10 Notice 1. All information included in this document is current as of the date this document is issued. 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