Preliminary Datasheet RJK2009DPM Silicon N Channel MOS FET High Speed Power Switching REJ03G0474-0300 Rev.3.00 Jun 30, 2010 Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D 1. Gate 2. Drain 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Ratings 200 ±30 40 160 40 160 40 106 Unit V V A A A A A mJ Pch Note2 ch-c Tch Tstg 60 2.08 150 –55 to +150 W C/W C C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C REJ03G0474-0300 Rev.3.00 Jun 30, 2010 Page 1 of 6 RJK2009DPM Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance RDS(on) Min 200 — — 3.0 20 — Typ — — — — 33 0.029 Max — 1 0.1 4.5 — 0.036 Unit V A A V S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd — — — — — — — — — — 2900 520 66 40 160 120 110 72 16 31 — — — — — — — — — — pF pF pF ns ns ns ns nC nC nC Body-drain diode forward voltage Body-drain diode reverse recovery time VDF trr Body-drain diode reverse recovery charge Qrr — — — 0.9 150 0.8 1.4 — — V ns C Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 20 A, VDS = 10 V Note4 ID = 20 A, VGS = 10 VNote4 VDS = 25 V, VGS = 0, f = 1 MHz ID = 20 A, VGS = 10 V, RL = 5 , Rg = 10 VDD = 160 V, VGS = 10 V, ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0, diF/dt = 100 A/s Notes: 4. Pulse test REJ03G0474-0300 Rev.3.00 Jun 30, 2010 Page 2 of 6 RJK2009DPM Preliminary Main Characteristics Power vs. Temperature Derating 300 100 ID (A) 60 40 20 10 30 10 Drain Current Pch (W) Channel Dissipation Maximum Safe Operation Area 1000 80 Operation in 3 this area is 1 limited by RDS(on) 0.3 0.1 0.03 Ta = 25°C 0.01 0 50 100 Case Temperature 150 1 200 Tc (°C) Typical Output Characteristics 100 10 V 7.5 V Typical Transfer Characteristics Pulse Test VDS = 10 V Pulse Test 80 60 6V 40 5.5 V 20 ID (A) 80 6.5 V Drain Current ID (A) Drain Current 100 300 1000 30 3 10 Drain to Source Voltage VDS (V) 100 7V 60 40 20 Tc = 75°C VGS = 5 V 0 4 8 12 Drain to Source Voltage 0 16 20 VDS (V) Drain to Source Saturation Voltage VDS(on) (V) 4 Pulse Test 3 2 ID = 40 A 1 20 A 10 A Drain to Source on State Resistance RDS(on) (Ω) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0 μ 10 PW 0μ s s (1 = 1 sh ot) ms 2 4 6 Gate to Source Voltage REJ03G0474-0300 Rev.3.00 Jun 30, 2010 16 20 VGS (V) 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.1 VGS = 10 V 0.05 0.02 0.01 0.005 0.002 Pulse Test 0.001 12 4 8 Gate to Source Voltage 25°C −25°C 1 3 10 30 100 300 Drain Current ID (A) 1000 Page 3 of 6 Preliminary 0.16 0.12 20 A 0.08 ID = 40 A 0.04 10 A 0 −25 0 25 50 75 Case Temperature 100 125 150 10 25°C 3 75°C 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1 3 Drain Current 100 ID (A) VGS = 0 f = 1 MHz 30000 Capacitance C (pF) 200 100 50 20 10 5 di / dt = 100 A / μs VGS = 0, Ta = 25°C 2 30 10 Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 3000 1000 Coss 300 Crss 100 30 10 1 0 3 10 30 100 300 1000 Reverse Drain Current IDR (A) Dynamic Input Characteristics 8 VDS 100 0 12 4 VDD = 160 V 100 V 50 V 20 40 Gate Charge REJ03G0474-0300 Rev.3.00 Jun 30, 2010 60 80 Qg (nC) 0 100 Switching Time t (ns) VDD = 50 V 100 V 160 V 300 200 VGS VGS (V) ID = 40 A 50 100 150 Drain to Source Voltage VDS (V) Switching Characteristics 10000 16 Gate to Source Voltage VDS (V) Tc = −25°C 100000 400 Drain to Source Voltage 30 Tc (°C) 500 1 100 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Forward Transfer Admittance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 0.2 VGS = 10 V Pulse Test Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (Ω) RJK2009DPM VGS = 10 V, VDD = 100 V PW = 5 μs, duty < 1 % RG = 10 Ω 1000 tf tr td(off) 100 tf td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 Page 4 of 6 RJK2009DPM Preliminary Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 100 80 60 VGS = 0 V 40 10 V 20 5V Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage 1.6 2.0 VDS = 10 V ID = 10 mA 4 1 mA 3 0.1 mA 2 1 0 -25 0 VSD (V) 25 50 75 100 125 150 Case Temperature Tc (°C) Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 0.3 D=1 0.5 0.2 0.1 0.1 0.05 0.03 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 2.08°C/W, Tc = 25°C 0.02 0.01 0.01 e uls tp sho PDM 1 D= PW T PW 0.003 T 0.001 10 μ 100 μ 1m 10 m Pulse Width 100 m PW (s) 1 Switching Time Test Circuit 10 Waveform Vout Monitor Vin Monitor 100 90% D.U.T. RL Vin 10Ω Vin 10 V V DD = 100 V Vout 10% 10% 90% td(on) REJ03G0474-0300 Rev.3.00 Jun 30, 2010 tr 10% 90% td(off) tf Page 5 of 6 RJK2009DPM Preliminary Package Dimensions Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 φ3.2 + 0.4 – 0.2 4.0 ± 0.3 2.6 0.86 Unit: mm 5.5 ± 0.3 3.2 ± 0.3 1.6 0.86 0.66 5.45 ± 0.5 MASS[Typ.] 5.2g 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 Ordering Information Part Name RJK2009DPM-E Note: Quantity 30 pcs Shipping Container Plastic magazine For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G0474-0300 Rev.3.00 Jun 30, 2010 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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