RENESAS RJH60A01RDPD-A0

Preliminary Datasheet
RJH60A01RDPD-A0
600V - 5A - IGBT
Application: Inverter
R07DS1091EJ0100
Rev.1.00
Jul 04, 2013
Features
• Reverse conducting IGBT with monolithic diode
• Short circuit withstand time (5 μs typ.)
• Low collector to emitter saturation voltage
VCE(sat) = 1.9 V typ. (at IC = 5 A, VGE = 15 V, Ta = 25°C)
• Built-in fast recovery diode (trr = 100 ns typ.) in one package
• Trench gate and thin wafer technology
• High speed switching
tf = 85 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 5 A, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZK-A
(Package name : TO-252A)
4
12
3
C
1. Gate
2. Collector
3. Emitter
4. Collector
G
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
Symbol
VCES / VR
VGES
IC
IC
Note1
IC(peak)
IDF
IDF(peak) Note1
PC Note2
θj-c Note2
Tj
Tstg
Ratings
600
±30
10
5
Unit
V
V
A
A
15
5
15
29.4
4.25
150
–55 to +150
A
A
A
W
°C/ W
°C
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
Page 1 of 8
RJH60A01RDPD-A0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
V(BR)CES
Min
600
Zero gate voltage collector current
/ diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
ICES / IR
—
—
1
μA
VCE = 600 V, VGE = 0 V
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
1.9
2.8
160
12
6
11
2.5
6.7
30
10
40
±100
7.5
2.3
—
—
—
—
—
—
—
—
—
—
nA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
VGE = ±30 V, VCE = 0 V
VCE = 10 V, IC = 1 mA
IC = 5 A, VGE = 15 V Note3
IC = 10 A, VGE = 15 V Note3
tf
Eon
Eoff
Etotal
tsc
—
—
—
—
3
85
0.13
0.07
0.20
5
—
—
—
—
—
ns
mJ
mJ
mJ
μs
FRD Forward voltage
VF
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
trr
Qrr
Irr
—
—
—
—
2.0
100
0.20
5.4
—
—
—
—
V
ns
μC
A
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
Typ
—
Max
—
Unit
V
Test Conditions
IC =10 μA, VGE = 0
VCE = 25 V
VGE = 0 V
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 5 A
VCC = 300 V
VGE = 15 V
IC = 5 A,
Rg = 5 Ω
Inductive load
VCE ≤ 360 V, VGE = 15 V
Tj = 100°C
IF = 5 A Note3
IF = 5 A
diF/dt = 100 A/μs
Notes: 3. Pulse test.
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
Page 2 of 8
RJH60A01RDPD-A0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
Maximum DC Collector Current vs.
Case Temperature
12
Collector Current IC (A)
Collector Dissipation Pc (W)
40
30
20
10
0
25
50
75
6
4
2
0
100 125 150 175
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
20
PW
10
10
0μ
=
10
s
Collector Current IC (A)
100
Collector Current IC (A)
8
0
0
μs
1
0.1
0.01
1
15
10
5
Tc = 25°C
Single pulse
0
10
1000
100
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
16
16
Tc = 25°C
Pulse Test
18 V
12
8
12 V
4
VGE = 10 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
Tc = 150°C
Pulse Test
15 V
Collector Current IC (A)
Collector Current IC (A)
10
18 V
15 V
12
8
12 V
VGE = 10 V
4
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 8
RJH60A01RDPD-A0
Preliminary
Collector to Emitter Saturation Voltage
VCE(sat) (V)
6
5
4
3
IC = 10 A
2
5A
Tc = 25°C
Pulse Test
1
8
10
12
14
16
18
6
5
4
IC = 10 A
3
5A
2
Tc = 150°C
Pulse Test
1
20
8
14
16
20
18
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Tc = 25°C
150°C
8
4
VCE = 10 V
Pulse Test
0
0
4
8
12
16
20
5
VGE = 15 V
Pulse Test
4
IC = 10 A
3
5A
3A
2
1
−25
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
Frequency Characteristics (Typical)
4
10
8
IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25
50
75
100 125 150
Case Temparature Tc (°C)
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
Collector Current IC(RMS) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
12
Gate to Emitter Voltage VGE (V)
12
0
−25
10
Gate to Emitter Voltage VGE (V)
16
Collector Current IC (A)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
0
3
Collector current wave
(Square wave)
2
1
0
1
Tj = 125°C
Tc = 90°C
VCE = 300 V
VGE = 15 V
Rg = 5 Ω
duty = 50%
10
100
1000
Frequency f (kHz)
Page 4 of 8
RJH60A01RDPD-A0
Preliminary
Switching Characteristics (Typical) (1)
10
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
tf
100
td(off)
td(on)
tr
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
Eon
Eoff
0.1
0.01
10
1
1
100
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (4)
1
Swithing Energy Losses E (mJ)
tf
100
td(off)
td(on)
tr
10
VCC = 300 V, VGE = 15 V
IC = 5 A, Tc = 150°C
1
Eon
0.1
Eoff
VCC = 300 V, VGE = 15 V
IC = 5 A, Tc = 150°C
0.01
1
10
100
1
Swithing Energy Losses E (mJ)
1000
tf
100
td(off)
td(on)
tr
VCC = 300 V, VGE = 15 V
IC = 5 A, Rg = 5 Ω
0
25
50
75
100
125
Case Temperature Tc (°C)
(Inductive load)
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
10
10
Gate Resistance Rg (Ω)
(Inductive load)
Gate Resistance Rg (Ω)
(Inductive load)
Switching Times t (ns)
10
Collector Current IC (A)
(Inductive load)
1000
Switching Times t (ns)
Switching Characteristics (Typical) (2)
150
1
Eon
0.1
Eoff
VCC = 300 V, VGE = 15 V
IC =5 A, Rg = 5 Ω
0.01
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Page 5 of 8
RJH60A01RDPD-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0 V
f = 1 MHz
Ta = 25°C
1000
Cies
100
10
Coes
Cres
1
0
50
100
150
200
250
800
600
12
400
8
200
300
0
4
400
200
Tc = 150°C
25°C
80
120
160
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
600
40
1.0
VCC = 300 V
IF = 5 A
0.8
0.6
0.4
Tc = 150°C
0.2
25°C
0
200
0
Diode Current Slope diF/dt (A/μs)
40
80
120
160
200
Diode Current Slope diF /dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
20
16
VCC = 300 V
IF = 5 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
0
16
12
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
VCC = 300 V
IF = 5 A
0
8
Gate Charge Qg (nC)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
0
4
VCC = 300 V
IC = 5 A
Tc = 25°C
VCE
0
Collector to Emitter Voltage VCE (V)
800
16
VGE
Gate to Emitter Voltage VGE (V)
Capacitance C (pF)
10000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
16
12
Tc = 150°C
8
25°C
4
12
Tc = 25°C
150°C
8
4
VGE = 0 V
Pulse Test
0
0
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
0
1
2
3
4
5
6
C-E Diode Forward Voltage VCEF (V)
Page 6 of 8
RJH60A01RDPD-A0
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
3
Tc = 25°C
D=1
1
0.5
0.3
θj – c(t) = γs (t) • θj – c
θj – c = 4.25°C/W, Tc = 25°C
0.2
0.1
0
0.
PDM
5
D=
PW
T
0.02
0.01
1 shot pulse
0.1
100 μ
PW
T
1m
10 m
100 m
Pulse Width
1
100
10
PW (s)
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC
D.U.T
90%
VCC
90%
Rg
10%
td(off)
Diode Reverse Recovery Time Test Circuit
tf
10%
td(on)
tr
Waveform
VCC
IF
D.U.T
IF
diF/dt
L
trr
0
Irr
Rg
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
0.5 Irr
0.9 Irr
Page 7 of 8
RJH60A01RDPD-A0
Preliminary
Package Dimension
JEITA Package Code
⎯
RENESAS Code
PRSS0004ZK-A
2.7 ± 0.3
Previous Code
⎯
6.5 ± 0.3
(5.2 ± 0.3)
(1.2 Max)
2.29 ± 0.3
MASS[Typ.]
0.322g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(4.3)
(5.2)
1.2 Max
6.1 ± 0.3
1.1 ± 0.3
Package Name
TO-252A
0.2 Max
0.75 ± 0.15
0.55 ± 0.1
2.29 ± 0.3
Ordering Information
Orderable Part Number
RJH60A01RDPD-A0#J2
R07DS1091EJ0100 Rev.1.00
Jul 04, 2013
Quantity
3000 pcs
Shipping Container
Taping
Page 8 of 8
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Colophon 2.2