Preliminary Datasheet RJH60V2BDPP-M0 600V - 12A - IGBT Application: Inverter R07DS0760EJ0100 Rev.1.00 May 25, 2012 Features Short circuit withstand time (6 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode (25 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C 1. Gate 2. Collector 3. Emitter G 1 2 3 E Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Diode) Junction temperature Storage temperature Symbol VCES / VR VGES IC IC ic(peak) Note1 iDF iDF(peak) Note1 PC Note2 j-c Note2 j-cd Note2 Tj Tstg Ratings 600 ±30 25 12 50 12 50 34 3.7 2.5 150 –55 to +150 Unit V V A A A A A W °C/ W °C/ W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C R07DS0760EJ0100 Rev.1.00 May 25, 2012 Page 1 of 9 RJH60V2BDPP-M0 Preliminary Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage V(BR)CES Min 600 Zero gate voltage collector current / Diode reverse current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage ICES / IR — — 5 A VCE = 600 V, VGE = 0 IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres Qg Qge Qgc td(on) tr td(off) — 5.5 — — — — — — — — — — — — — 1.6 2.2 450 37 18 32 5 17 33 15 65 ±1 7.5 2.2 — — — — — — — — — — A V V V pF pF pF nC nC nC ns ns ns VGE = ±30 V, VCE = 0 VCE = 10 V, IC = 1 mA IC = 12 A, VGE = 15 V Note3 IC = 25 A, VGE = 15 V Note3 tf Eon Eoff Etotal tsc — — — — 3 75 0.03 0.18 0.21 6 — — — — — ns mJ mJ mJ s FRD forward voltage VF FRD reverse recovery time FRD reverse recovery charge FRD peak reverse recovery current trr Qrr Irr — — — — 2.5 25 0.02 1.2 — — — — V ns C A Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Short circuit withstand time Symbol Typ — Max — Unit V Test Conditions IC =10 A, VGE = 0 VCE = 25 V VGE = 0 f = 1 MHz VGE = 15 V VCE = 300 V IC = 12 A VCC = 300 V VGE = 15 V IC = 12 A Rg = 5 Inductive load Tc = 100 C VCC 360 V, VGE = 15 V IF = 12 A Note3 IF = 12 A diF/dt = 100 A/s Notes: 3. Pulse test. R07DS0760EJ0100 Rev.1.00 May 25, 2012 Page 2 of 9 RJH60V2BDPP-M0 Preliminary Main Characteristics Collector Dissipation vs. Case Temperature Maximum DC Collector Current vs. Case Temperature 30 Collector Current IC (A) Collector Dissipation Pc (W) 50 40 30 20 10 0 25 50 75 15 10 5 100 125 150 175 0 25 50 75 100 125 150 175 Case Temperature Tc (°C) Case Temperature Tc (°C) Maximum Safe Operation Area Turn-off Safe Operation Area 80 PW 10 10 0μ s = 10 Collector Current IC (A) 100 μs 1 0.1 0.01 1 60 40 20 Tc = 25°C Single pulse 0 10 100 1000 0 200 400 600 800 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Typical Output Characteristics Typical Output Characteristics 50 Tc = 25°C Pulse Test 50 15 V Collector Current IC (A) Collector Current IC (A) 20 0 0 Collector Current IC (A) 25 40 30 12 V 20 10 V 10 Tc = 150°C Pulse Test 15 V 40 30 12 V 20 10 V 10 VGE = 8 V VGE = 8 V 0 0 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) R07DS0760EJ0100 Rev.1.00 May 25, 2012 0 1 2 3 4 5 Collector to Emitter Voltage VCE (V) Page 3 of 9 Preliminary 5 Tc = 25°C Pulse Test 4 3 IC = 25 A 2 12 A 1 8 10 12 14 16 18 20 Collector Current IC (A) 5 Tc = 150°C Pulse Test 4 3 IC = 25 A 2 12 A 1 8 16 18 20 Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) Tc = 25°C 150°C 30 20 VCE = 10 V Pulse Test 0 4 0 8 12 16 20 4 VGE = 15 V Pulse Test 3 IC = 25 A 2 12 A 1 0 −25 0 25 50 75 100 125 150 Case Temparature Tc (°C) Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) Frequency Characteristics (Typical) 6 10 8 IC = 10 mA 6 1 mA 4 2 VCE = 10 V Pulse Test Collector Current IC(RSM) (A) Gate to Emitter Cutoff Voltage VGE(off) (V) 14 12 Typical Transfer Characteristics 40 0 −25 10 Gate to Emitter Voltage VGE (V) 50 10 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Satularion Voltage VCE(sat) (V) RJH60V2BDPP-M0 5 0 Collector current wave (Square wave) 4 3 2 Tj = 125°C, Tc = 90°C VCE = 400 V, VGE = 15 V Rg = 5 Ω, duty = 50% 1 0 0 25 50 75 100 125 150 Case Temparature Tc (°C) R07DS0760EJ0100 Rev.1.00 May 25, 2012 1 10 100 1000 Frequency f (kHz) Page 4 of 9 RJH60V2BDPP-M0 Preliminary Switching Characteristics (Typical) (1) 10 Swithing Energy Losses E (mJ) tf 100 td(off) td(on) 10 tr VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 VCC = 300 V, VGE = 15 V Rg = 5 Ω, Tc = 150°C 1 Eoff 0.1 Eon 0.01 1 100 10 1 100 Collector Current IC (A) (Inductive load) Switching Characteristics (Typical) (3) Switching Characteristics (Typical) (4) 1 1000 VCC = 300 V, VGE = 15 V IC = 12 A, Tc = 150°C tf 100 td(off) td(on) tr Eoff Eon 0.1 VCC = 300 V, VGE = 15 V IC = 12 A, Tc = 150°C 0.01 10 1 10 100 1 1000 Swithing Energy Losses E (mJ) VCC = 300 V, VGE = 15 V IC = 12 A, Rg = 5 Ω tf td(off) td(on) tr 10 25 50 75 100 125 Case Temperature Tc (°C) (Inductive load) R07DS0760EJ0100 Rev.1.00 May 25, 2012 100 Switching Characteristics (Typical) (6) Switching Characteristics (Typical) (5) 100 10 Gate Registance Rg (Ω) (Inductive load) Gate Registance Rg (Ω) (Inductive load) Switching Times t (ns) 10 Collector Current IC (A) (Inductive load) Swithing Energy Losses E (mJ) Switching Times t (ns) 1000 Switching Times t (ns) Switching Characteristics (Typical) (2) 150 1 Eoff Eon 0.1 VCC = 300 V, VGE = 15 V IC =12 A, Rg = 5 Ω 0.01 25 50 75 100 125 150 Case Temperature Tc (°C) (Inductive load) Page 5 of 9 RJH60V2BDPP-M0 Preliminary Typical Capacitance vs. Collector to Emitter Voltage VGE = 0 V f = 1 MHz Ta = 25°C 1000 Cies 100 Coes 10 Cres 1 0 50 100 150 200 250 800 600 12 400 8 200 0 300 0 10 150 100 Tc = 150°C 25°C 0 40 80 120 160 Reverse Recovery Charge Qrr (μC) Reverse Recovery Time trr (ns) 200 0 40 0 50 0.20 VCC = 300 V IF = 17 A 0.16 0.12 Tc = 150°C 0.08 0.04 25°C 0 200 0 Diode Current Slope diF/dt (A/μs) 40 80 120 160 200 Diode Current Slope diF /dt (A/μs) Reverse Recovery Current vs. Diode Current Slope (Typical) Forward Current vs. Forward Voltage (Typical) 16 50 VCC = 300 V IF = 17 A Forward Current IF (A) Reverse Recovery Current Irr (A) 30 Reverse Recovery Charge vs. Diode Current Slope (Typical) VCC = 300 V IF = 17 A 50 20 Gate Charge Qg (nc) Reverse Recovery Time vs. Diode Current Slope (Typical) 250 4 VCC = 300 V IC = 12 A Tc = 25°C VCE Collector to Emitter Voltage VCE (V) 300 16 VGE Gate to Emitter Voltage VGE (V) Capacitance C (pF) 10000 Collector to Emitter Voltage VCE (V) Dynamic Input Characteristics (Typical) 12 8 Tc = 150°C 4 25°C 0 0 40 80 120 160 200 Diode Current Slope diF/dt (A/μs) R07DS0760EJ0100 Rev.1.00 May 25, 2012 VGE = 0 V Pulse Test 40 30 Tc = 150°C 20 25°C 10 0 0 1 2 3 4 C-E Diode Forward Voltage VCEF (V) Page 6 of 9 Normalized Transient Thermal Impedance γs (t) RJH60V2BDPP-M0 Preliminary Normalized Transient Thermal Impedance vs. Pulse Width (IGBT) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 3.7°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 2 0.0 PDM D= 0.01 1 shot pulse 0.01 100 μ 1m PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) 10 Tc = 25°C 1 D=1 0.5 θj – c(t) = γs (t) • θj – c θj – c = 2.5°C/W, Tc = 25°C 0.2 0.1 0.1 0.05 PDM 0.02 0.01 1 shot pulse 0.01 100 μ R07DS0760EJ0100 Rev.1.00 May 25, 2012 1m D= PW T PW T 10 m 100 m Pulse Width 1 10 100 PW (s) Page 7 of 9 RJH60V2BDPP-M0 Preliminary Switching Time Test Circuit Waveform 90% VGE Diode clamp 10% L IC D.U.T 90% VCC 90% Rg 10% 10% td(off) Diode Reverse Recovery Time Test Circuit tf td(on) tr Waveform VCC IF D.U.T IF diF/dt L trr 0 Irr Rg R07DS0760EJ0100 Rev.1.00 May 25, 2012 0.5 Irr 0.9 Irr Page 8 of 9 RJH60V2BDPP-M0 Preliminary Package Dimension Package Name TO-220FL JEITA Package Code ⎯ Previous Code TO-220FL RENESAS Code PRSS0003AF-A Unit: mm 6.5 ± 0.3 3.0 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.5g 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Orderable Part Number RJH60V2BDPP-M0#T2 R07DS0760EJ0100 Rev.1.00 May 25, 2012 Quantity 600 pcs Shipping Container Box (Tube) Page 9 of 9 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 © 2012 Renesas Electronics Corporation. All rights reserved. Colophon 2.0