Preliminary RJK03C1DPB Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1830-0310 Power Switching Rev.3.10 Sep 29, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 mΩ typ. (at VGS = 10 V) • Pb-free • Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 6 7 8 D D D D 5 3 12 1, 2, 3 4 5 4 G 4 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 1 of 6 Symbol VDSS VGSS ID Ratings 30 ±20 60 Unit V V A ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch 240 60 28 78.4 65 1.92 150 A A A mJ W °C/W °C Tstg –55 to +150 °C Note1 RJK03C1DPB Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Notes: 4. Pulse test REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 2 of 6 Min 30 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 — — 1.2 — — — — — — — — — — — — — — — 1.7 2.2 120 6000 1230 550 0.5 42 18 16 18 19 ±0.5 1 2.5 2.2 3.1 — — — — — — — — — — μA mA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns VGS = ±20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 30 A, VGS = 10 V Note4 ID = 30 A, VGS = 4.5 V Note4 ID = 30 A, VDS = 10 V Note4 — — — — 75 15 0.39 40 — — — — ns ns V ns VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 60 A VGS = 10 V, ID = 30 A, VDD ≅ 10 V, RL = 0.33 Ω, Rg = 4.7 Ω IF = 2 A, VGS = 0 Note4 IF = 60 A, VGS = 0 diF/ dt = 100 A/ μs RJK03C1DPB Preliminary Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 60 100 Operation in this area is limited by RDS(on) 1 Tc = 25°C 0 50 100 150 Case Temperature 0.1 1 shot Pulse 0.1 1 200 10 V Pulse Test VDS = 10 V Pulse Test 2.8 V ID (A) 80 2.6 V 60 40 80 60 Drain Current ID (A) VDS (V) 100 4.5 V Drain Current 100 Typical Transfer Characteristics 100 2.4 V 20 40 25°C 20 Tc = 75°C VGS = 2.2 V 0 10 Drain to Source Voltage Tc (°C) Typical Output Characteristics 2 4 6 Drain to Source Voltage 8 –25°C 10 0 1 2 3 4 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (mV) PW = 10 ms n tio 20 10 a er Op Drain Current 1 ms 40 DC Channel Dissipation Pch (W) 80 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current 10 200 Pulse Test Pulse Test 150 3 100 1 50 VGS = 4.5 V 10 V 0.3 ID = 20 A 10 A 5A 0 4 8 12 Gate to Source Voltage 16 0.1 20 VGS (V) REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 3 of 6 1 3 10 30 Drain Current 100 ID 300 1000 (A) RJK03C1DPB Preliminary Static Drain to Source on State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 10 10000 Pulse Test Capacitance C (pF) 6 ID = 5 A, 10 A, 20 A 4 VGS = 4.5 V 2 1000 Coss 0 –25 0 25 100 5 A, 10 A, 20 A 50 75 10 0 100 125 150 Case Temperature Tc (°C) 30 12 VDS 20 8 4 VDD = 25 V 10 V 0 0 40 80 Gate Charge 120 0 200 160 Repetitive Avalanche Energy EAR (mJ) 100 80 60 40 20 50 75 100 125 150 Channel Temperature Tch (°C) REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 4 of 6 30 Pulse Test 10 V 80 5V 60 40 VGS = 0, –5V 20 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Qg (nc) Maximum Avalanche Energy vs. Channel Temperature Derating 0 25 20 100 Reverse Drain Current IDR (A) 16 VDD = 25 V 10 V VGS (V) 20 VGS 10 10 Reverse Drain Current vs. Source to Drain Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage 40 VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics ID = 60 A Crss 300 30 10 V 50 Ciss 3000 8 RJK03C1DPB Preliminary Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.3 0.5 0.2 0.1 0.1 0.05 2 0.0 se ul 1 0 0. ot p h 1s 0.03 D= PDM PW T PW T 0.01 1m 100 m 10 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% 10% VDS = 10 V 90% td(on) REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 5 of 6 tr 90% td(off) tf RJK03C1DPB Preliminary Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 0° – 8° +0.25 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 Unit: mm 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part No. RJK03C1DPB-00-J5 Quantity 2500 pcs REJ03G1830-0310 Rev.3.10 Sep 29, 2009 Page 6 of 6 Shipping Container Taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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