RENESAS BCR3PM

Preliminary Datasheet
BCR3PM-12LA
R07DS0097EJ0300
(Previous: REJ03G0301-0200)
Rev.3.00
Sep 13, 2010
Triac
Low Power Use
Features




 Insulated Type
 Planar Passivation Type
 UL Recognized : Yellow Card No. E223904
IT (RMS) : 3 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 20 mA (10 mA)Note5
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2
3
Applications
Contactless AC switch, light dimmer, electric blanket, control of household equipment such as electric fan, solenoid
driver, small motor control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Page 1 of 6
BCR3PM-12LA
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
3.0
Unit
A
Surge on-state current
ITSM
30
A
I2t
3.7
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
W
W
V
A
C
C
g
V
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 107C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 125C, VDRM applied
Tc = 25C, ITM = 4.5 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
20Note5
20Note5
20Note5
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2
—
—
—
—
4.5
V
C/W
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5
—
—
V/s
Tj = 125C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT  10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 6
BCR3PM-12LA
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
101
7
5
3
2
100
7
5
3
2
–1
20
15
10
5
2 3
5 7 10
1
2 3
5 7 10
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PGM = 3W
PG(AV) = 0.3W
IGM =
0.5A
VGT
0
IRGT I
IFGT I, IRGT III
VGD = 0.2V
10–1 0
10 2 3 5 7101 2 3 5 7102 2 3 5 7103
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
25
Conduction Time (Cycles at 60Hz)
1
10
7
5
3
2
30
On-State Voltage (V)
102
7
5
3
2
10
7
5
3
2
35
0 0
10
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10
Gate Voltage (V)
40
Surge On-State Current (A)
10
7 Tj = 25°C
5
3
2
103
7
5
3
2
2
Typical Example
IRGT III
102
I
I
7 FGT I, RGT I
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
10
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Transient Thermal Impedance (°C/W)
On-State Current (A)
2
102 2 3 5 7103 2 3 5 7
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60Hz)
Page 3 of 6
BCR3PM-12LA
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
4.5
140
4.0
360° Conduction
3.5 Resistive,
3.0 inductive loads
2.5
2.0
1.5
1.0
100 Curves apply regardless
of conduction angle
80
60
40
360° Conduction
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
140
120
100
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
80
60 All fins are black painted
aluminum and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
Natural convection
0
0
Ambient Temperature (°C)
Ambient Temperature (°C)
120
20 Resistive,
0.5
0
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
5.0
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
10
7
5
3
2
Typical Example
104
7
5
3
2
3
10
7
5
3
2
2
10
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
3.0
Typical Example
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Page 4 of 6
Preliminary
103
7
5
3
2
Distribution
102
7
5
3
2
T2+, G–
Typical Example
1
10
7
5
3 T2+, G+
Typical Example
2
T2–, G–
0
10
–60 –40–20 0 20 40 60 80 100 120 140
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics
160
Typical Example
Tj = 125°C
140
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
BCR3PM-12LA
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
7
5
3
2
1
10
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
Minimum
3 Characteristics
Value
2
100
7 0
10
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
I Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
3
10
7
5
3
2
6Ω
Typical Example
6Ω
IRGT III
IRGT I
IFGT I
A
6V
V
102
7
5
A
6V
330Ω
V
330Ω
Test Procedure II
Test Procedure I
6Ω
3
2
101 0
10
A
6V
2 3
5 7 10
1
2 3
5 7 10
Gate Current Pulse Width (μs)
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
2
V
330Ω
Test Procedure III
Page 5 of 6
BCR3PM-12LA
Preliminary
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2±0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
BCR3PM-12LA
BCR3PM-12LA-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0097EJ0300 Rev.3.00
Sep 13, 2010
Page 6 of 6
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