RENESAS BCR5AS-14A

Preliminary Datasheet
BCR5AS-14A
R07DS0671EJ0100
Rev.1.00
Jul 23, 2012
Triac
Medium Power Use
Features
 IT (RMS) : 5 A
 IFGTI, IRGTI, IRGT III: 30 mA
 Non-Insulated Type
 Planar Passivation Type
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
4
12
2, 4
1.
2.
3.
4.
3
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
3
Applications
Hybrid IC, Solid state relay, Switching mode power supply, light dimmer, electronic switch, electric fans, electronic
blanket, and Washing machine, small motor controller and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDRM
VDSM
Voltage class
14
700
840
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
3
0.3
10
2
–40 to +125
–40 to +125
0.26
W
W
V
A
C
C
g
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
Unit
V
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 103C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Page 1 of 6
BCR5AS-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 125C, VDRM applied
Tc = 25C, ITM = 7 A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2
—
—
—
—
3.0
V
C/W
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5
—
—
V/s
Tj = 125C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 6
BCR5AS-14A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
100
Surge On-State Current (A)
101
Tj = 125°C
100
Tj = 25°C
10−1
0
1
2
3
VGT = 1.5V
× 100 (%)
PGM = 3W
PG(AV) =
0.3W
IGM = 2A
IFGT I
IRGT I
IRGT III
VGD = 0.2V
102
103
104
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
102
101
Gate Trigger Current vs.
Junction Temperature
10−1 1
10
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
20
Gate Characteristics
VGM = 10V
103
Typical Example
IRGT I, IRGT III
102
IFGT I
101
100
–40
0
40
80
160
120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
–40
40
Conduction Time (Cycles at 50Hz)
101
101
60
On-State Voltage (V)
102
100
80
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tc = 125°C
4
3
2
1
0
10–1
100
101
102
Time (s)
Page 3 of 6
BCR5AS-14A
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
7
140
6
5
4
3
2
360° Conduction
Resistive,
inductive loads
1
0
1
2
3
4
5
6
7
Curves apply regardless
of conduction angle
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
0
8
0
1
2
3
4
5
6
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
105
Typical Example
104
103
102
–40
0
40
80
120
160
102
101
–40
0
40
80
120
160
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
T2+, G–
Typical Example
Distribution
T2–, G–
Typical Example
102
101
T2+, G+
Typical Example
–40
Typical Example
Junction Temperature (°C)
103
100
103
0
40
80
120
Junction Temperature (°C)
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
160
8
7
RMS On-State Current (A)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
0
Latching Current (mA)
Case Temperature (°C)
8
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 6
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101
102
103
104
Commutation Characteristics
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
BCR5AS-14A
Minimum
Characteristics
Value
I Quadrant
III Quadrant
100
100
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
101
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Characteristics Test Circuits
103
Typical Example
IFGT I
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
IRGT I
IRGT III
6Ω
6Ω
A
6V
330Ω
V
102
Test Procedure I
A
6V
330Ω
V
Test Procedure II
6Ω
A
6V
101
100
101
Gate Current Pulse Width (μs)
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
102
V
330Ω
Test Procedure III
Page 5 of 6
BCR5AS-14A
Preliminary
Package Dimensions
Previous Code
⎯
0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZG-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Ordering Information
Orderable Part Number
BCR5AS-14A#B00
BCR5AS-14A -T13#B00
Packing
Tube
Embossed Tape
Quantity
75 pcs.
3000 pcs.
Remark
MP-3A package
MP-3A package, Taping direction “T1”
Note : Please confirm the specification about the shipping in detail.
R07DS0671EJ0100 Rev.1.00
Jul 23, 2012
Page 6 of 6
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