Preliminary Datasheet BCR4AS-16LH Triac Medium Power Use R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 Features • • • • • The Product guaranteed maximum junction temperature 150°C • Non-Insulated Type • Planar Type IT (RMS) : 4 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 35 mA or 10mA(IGT item:1) High Commutation Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 12 2, 4 1. 2. 3. 4. 3 3 T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Switching mode power supply, small motor control, heater control, and other general purpose AC power control applications Maximum Ratings Parameter Voltage class 16 800 960 Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 4 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) VGM IGM Tj Tstg — 3 0.3 10 2 –40 to +150 –40 to +150 0.32 W W V A °C °C g I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 Unit V V Conditions Commercial frequency, sine full wave 360°conduction, Tc = 129°C Note3 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Typical value Page 1 of 6 BCR4AS-16LH Preliminary Electrical Characteristics BCR4AS-16LH-1 (IGT item : 1) BCR4AS-16LH Unit Test conditions Max. 2.0 mA — 1.6 V Tj = 150°C VDRM applied Tc = 25°C, ITM = 6 A instantaneous measurement Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Parameter Symbol Repetitive peak off-state current IDRM Min. — Typ. — Max. 2.0 Min. — Typ. — On-state voltage VTM — — 1.6 — Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ VFGTΙ VRGTΙ VRGTΙΙΙ — — — — — — 1.5 1.5 1.5 — — — — — — 1.5 1.5 1.5 V V V Gate trigger curentNote2 Ι ΙΙ ΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ — — — — — — 10 10 10 — — — — — — 35 35 35 mA mA mA VGD 0.2 — — 0.2 — — 0.1 — — 0.1 — — Gate non-trigger voltage Thermal resistance Rth (j-c) — — 3.8 — — 3.8 Critical-rate of decay of on-state Note4 commutating current (di/dt)c 2.5 — — — — — — — — 3.0 — — Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Tj = 125°C VD = 1/2 VDRM Tj = 150°C V VD = 1/2 VDRM Note3 °C/W Junction to case A/ms Tj = 125°C (dv/dt)c < 10 V/μs A/ms Tj = 125°C (dv/dt)c < 100 V/μs V Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of decay of on-state commutating current is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Peak off-state voltage VD = 400 V 2. Rate of rise of off-state commutating voltage (dv/dt)c < 10 V/μs (IGT item : 1) (dv/dt)c < 100 V/μs R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 6 BCR4AS-16LH Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 40 Surge On-State Current (A) 101 100 10−1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 20 15 10 5 100 101 102 Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.3W 101 PGM = 3W VGT = 1.5V IGM = 2A 100 IGT = 35mA IGTitem1 = 10mA VGD = 0.1V 10−1 1 10 102 103 104 103 Typical Example 102 IFGT I IRGT I IRGT III VD = 6V RL = 6Ω 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 VD = 6V RL = 6Ω 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 30 On-State Voltage (V) 102 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 35 0 4.0 0 40 80 120 Junction Temperature (°C) R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tj = 25°C 4.0 3.2 2.4 1.6 0.8 0 10−1 100 101 102 Conduction Time (Cycles at 60Hz) Page 3 of 6 BCR4AS-16LH Preliminary Allowable Case Temperature vs. RMS On-State Current 7 160 6 140 Case Temperature (°C) On-State Power Dissipation (W) Maximum On-State Power Dissipation 5 4 3 2 360° Conduction Resistive, inductive loads 1 0 1 2 3 4 5 6 7 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 Typical Example 105 104 103 102 –40 0 40 80 120 160 103 Typical Example 102 101 –40 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Latching Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature Distribution T2+, G– Typical Example 102 101 T2–, G– Typical Example T +, G+ 2 Typical Example 100 –40 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) RMS On-State Current (A) 103 Latching Current (mA) Curves apply regardless 100 of conduction angle RMS On-State Current (A) 0 40 80 120 Junction Temperature (°C) R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 160 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 0 120 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 160 120 Junction Temperature (°C) Page 4 of 6 160 Typical Example Tj = 125°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 101 102 103 104 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 150°C 140 120 100 80 III Quadrant 60 40 I Quadrant 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Preliminary Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 102 Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) BCR4AS-16LH III Quadrant Minimum Value (IGTitem1) I Quadrant Minimum Value 100 100 101 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 III Quadrant I Quadrant 100 100 102 Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz 101 102 Rate of Decay of On-State Commutating Current (A/ms) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V Test Procedure I R1 A 6V 330Ω V 330Ω Test Procedure II C0 R0 C1 = 0.1 to 0.47μF C0 = 0.1μF R0 = 100Ω R1 = 47 to 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 Page 5 of 6 BCR4AS-16LH Preliminary Package Dimensions Previous Code TMP3 0.76 ± 0.2 Unit: mm 2.3 0.5 ± 0.2 0.1 ± 0.1 2.5Min 1Max 6.1 ± 0.2 6.6 5.3 ± 0.2 MASS[Typ.] 0.32g 1.4 ± 0.2 RENESAS Code PRSS0004ZG-A 1 ± 0.2 JEITA Package Code SC-63 10.4Max Package Name MP-3A 0.76 0.5 ± 0.2 1 2.3 2.3 ± 0.2 Ordering Information Orderable Part Number BCR4AS-16LH#B00 BCR4AS-16LH-1#B00 BCR4AS-16LH-T13#B00 BCR4AS-16LH-1T13#B00 Note: Packing Tube Tube Embossed Tape Embossed Tape Quantity 75 pcs. 75 pcs. 3000 pcs. 3000 pcs. Remark IGT item1 Taping direction “T1” Taping direction “T1”, IGT item1 Please confirm the specification about the shipping in detail. R07DS0331EJ0100 Rev.1.00 Apr 28, 2011 Page 6 of 6 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. 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