Data Sheet - Cree, Inc

C4D10120E
VRRM = 1200 V
Silicon Carbide Schottky Diode
IF (TC=135˚C) = 16 A
Z-Rec Rectifier
®
Qc Features
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52 nC
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
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= TO-252-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
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Solar Inverters
Power Factor Correction
Part Number
Package
Marking
C4D10120E
TO-252-2
C4D10120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VDC
DC Blocking Voltage
1200
V
Continuous Forward Current
33
16
10
A
TC=25˚C
TC=135˚C
TC=155˚C
IFRM
Repetitive Peak Forward Surge Current
47
31
A
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
IFSM
Non-Repetitive Peak Forward Surge
Current
71
59
A
TC=25˚C, tP=10 ms, Half Sine pulse
TC=110˚C, tP=10 ms, Half Sine pulse
IF,Max
Non-Repetitive Peak Forward Current
750
620
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Ptot
Power Dissipation
170
74
W
TC=25˚C
TC=110˚C
TJ
Operating Junction Range
-55 to
+175
˚C
Tstg
Storage Temperature Range
-55 to
+135
˚C
IF
1
Value
C4D10120E Rev. E
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
IR
Reverse Current
30
55
250
350
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QC
Total Capacitive Charge
52
nC
VR = 800 V, IF = 10A
di/dt = 200 A/μs
TJ = 25°C
C
Total Capacitance
754
45
38
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC
Capacitance Stored Energy
14.5
μJ
VR = 800 V
Fig. 7
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Typ.
Unit
TO-252 Package Thermal Resistance from Junction to Case
0.88
°C/W
Typical Performance
20
5
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
18
16
4
14
12
IF (A)
IR (mA)
3
10
8
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
2
6
4
1
2
0
0
0.5
1
1.5
2
2.5
3
VF (V)
Figure 1. Forward Characteristics
2
C4D10120E Rev. E
3.5
4
0
0
500
1000
VR (V)
1500
Figure 2. Reverse Characteristics
2000
Typical Performance
C4D10120E Current Derating
180.0
120
110
160.0
10%
20%
30%
50%
70%
DC
I
(A)
F(peak)
IF(PEAK) Peak Forward Current (A)
90
80
70
Duty
Duty
Duty
Duty
Duty
140.0
120.0
PTot (W)
100
60
50
100.0
80.0
60.0
40
30
40.0
20
20.0
10
0.0
0
25
50
75
100
125
150
175
25
Tc Case Temperature (°°C)
TC ˚C
Figure 3. Current Derating
50
75
100
TC ˚C
125
150
175
Figure 4. Power Derating
70
800
60
700
600
50
C (pF)
Qrr (nC)
500
40
30
400
300
20
200
10
100
0
0
200
400
600
800
0
1000
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
C4D10120E Rev. E
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
25
25.0
1000
1000
EC Capacitive
Energy (uJ)
C
20
20.0
(A)
IFSMIFSM
(A)
E (mJ)
15
15.0
10
10.0
100
100
TJ = 25°C
TJ = 110°C
5.05
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
10
10
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
tp(s)
tp (s)
VR Reverse Voltage (V)
VR (V)
Figure 7. Typical Capacitance Stored Energy
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Thermal Resistance (˚C/W)
1
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
10E-3
T (Sec)
Figure 9. Transient Thermal Impedance
4
C4D10120E Rev. E
100E-3
1
Package Dimensions
Package TO-252-2
q
Recommended Solder Pad Layout
Part Number
Package
Marking
C4D10120E
TO-252-2
C4D10120
TO-252-2
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C4D10120E Rev. E
Diode Model
Diode Model CSD04060
VfVTfT==
VTV+T+If*R
If*RT T
-3
V
VTT==0.965
+ (Tj *J*-1.3*10
) -3)
0.98+(T
-1.71*10
-3
RTT==0.096
+ (Tj * 1.06*10
) -4
0.040+(T
J* 5.32*10 )
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
C3D Spice models: http://response.cree.com/Request_Diode_model
SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
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C4D10120E Rev. E
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power