Cree C4D05120A Silicon Carbide Schottky Diode

C4D05120A
Silicon Carbide Schottky Diode
Z-Rec Rectifier
®
IF (TC=135˚C)
=
= 8A
27 nC
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
•
•
•
•
•
1200 V
Qc Features
•
•
•
•
•
VRRM = TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Part Number
Package
Marking
C4D05120A
TO-220-2
C4D05120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Reverse Voltage
1200
V
IF
Continuous Forward Current 17
8
5
A
TC=25˚C
TC=135˚C
TC=157˚C
IFRM
Repetitive Peak Forward Surge Current
26
18
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Forward Surge Current
46
36
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IF,Max
Non-Repetitive Peak Forward Current
400
320
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
81
35
W
TC=25˚C
TC=110˚C
Ptot
Power Dissipation
TJ
Operating Junction Range
-55 to
+175
˚C
Tstg
Storage Temperature Range
-55 to
+135
˚C
1
8.8
Nm
lbf-in
TO-220 Mounting Torque
1
Value
C4D05120A Rev. A
M3 Screw
6-32 Screw
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.4
1.9
1.8
3
V
IF = 5 A TJ=25°C
IF = 5 A TJ=175°C
IR
Reverse Current
20
40
150
300
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QC
Total Capacitive Charge
27
nC
VR = 800 V, IF = 5A
di/dt = 200 A/μs
TJ = 25°C
C
Total Capacitance
390
27
20
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC
Thermal Resistance from Junction
to Case
1.85
Max.
Unit
Test Conditions
Note
°C/W
Typical Performance
10
1000
9
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
8
900
800
700
Current
(µA)
IR (μA)
6
5
F
Current
I (A) (A)
7
4
500
400
3
300
2
200
1
100
0
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
0
0
0.5
1
1.5
2
2.5
VF (V)
Voltage
(V)
Figure 1. Forward Characteristics
2
600
C4D05120A Rev. A
3
3.5
0
500
1000
1500
VR (V)
Voltage (V)
Figure 2. Reverse Characteristics
2000
Typical Performance
90.0
60
80.0
70.0
60.0
50.0
I
30
Duty
Duty
Duty
Duty
Duty
PTot (W)
10%
20%
30%
50%
70%
DC
40
(A)
F(peak)
Forward Current (A)
IF(PEAK) Peak
50
20
40.0
30.0
20.0
10
10.0
0.0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC ˚C
Tc Case Temperature
T ˚C (°°C)
C
Figure 4. Power Derating
Figure 3. Current Derating
35
450
400
30
350
25
300
250
C (pF)
Qrr (nC)
20
15
200
150
10
100
5
50
0
0
0
200
400
600
800
0.1
1000
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
C4D05120A Rev. A
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
14
14.0
1000
1000
10.0
10
8.08
(A)
IFSMIFSM
(A)
E (mJ)
C
EC Capacitive Energy (uJ)
12
12.0
6.06
100
100
TJ = 25°C
TJ = 110°C
4.04
2.02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
100
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
VR Reverse
Voltage (V)
V (V)
tptp(s)
(s)
R
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Thermal
(˚C/W)
Junction ToResistance
Case Impedance,
ZthJC (oC/W)
Figure 7. Typical Capacitance Stored Energy
1
0.5
0.3
0.1
0.05
100E-3
0.02
SinglePulse
0.01
10E-3
1E-3
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C4D05120A Rev. A
100E-3
1
Package Dimensions
Package TO-220-2
Inches
POS
A
B
A
J
C
P
F
Q
B
D
X
S
E
Y
1 2
G
T
Z
U
L
M
PIN 1
PIN 2
W
N
CASE
Min
Max
.381
.410
9.677
10.414
.235
.255
5.969
Inc hes
M illim eters
2.540
M .100
in
M ax .120
M in
M
ax
D A
.395
.223
.410
E B
C
F
D
G
E
H F
.235
.590
.102
.143
.337
1.105
.590
.500
.149
.255 .615
5.969
.112
2.591
.153
.337
8.560
1.147
.610
14.986
.153 .550
3.785
J G
L H
1.127
J
L
N M
P N
V
Max
C P OS
M
H
Millimeters
Min
10.033
.337
3.048
10.414
5.664
8.560
6.477
14.986
2.845
3.632
8.560
28.067
15.494
12.700
3.886
15.621
3.886
29.134
13.970
R 1.147
0.197 28.626 29.134 R 0.197
.530
13.462 13.970
.025 .550 .036
.635
.914
R 0.010
R 0.254
.045
.055
1.143
1.397
.028
.036
.711
.914
.195 .055 .205
4.953
5.207
.045
1.143
1.397
.165 .205 .185
.195
4.953
4.191
5.207
4.699
Q P
Q
S
S
T
T
U U
.170
4.318
.048 .180 .054
.048
.054
1.219
3°
6°
3°
5°
3°
3°
6°
3°
5°
3°
6° 3°
3°3°
5°
4.572
1.219
1.371
3°
5°
3°
5°
3°
5°
1.372
V V
.100
.094
.110
2.794
2.388
2.794
W W
X
X
Y
Y
Z
.014
.014
3°
3°
.395
.385
.130
.130
.021 .025
.356
5°
3°
5.5°
.410
10.033
.410
.150
3.302
.150
.533
.356
5°
3°
10.414
9.779
3.810
3.302
.635
z
2.54
.110
6°
6°
6°
5.5°
10.414
3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip
Finish
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C4D05120A
TO-220-2
C4D05120
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
6.477
C4D05120A Rev. A
Diode Model
VfT = VT + If * RT
VT = 0.96 + (Tj * -1.22*10-3)
RT = 0.08 + (Tj * 8.5*10-4)
Note: Tj is diode junction temperature in degrees Celsius
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D05120A Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power