C4D08120A Silicon Carbide Schottky Diode Z-Rec Rectifier ® IF (TC=135˚C) = 11 A = 37 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • • 1200 V Qc Features • • • • • • VRRM = Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • Solar Inverters UPS Motor Drives Part Number Package Marking C4D08120A TO-220-2 C4D08120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 23 11 8 A TC=25˚C TC=135˚C TC=153˚C IFRM Repetitive Peak Forward Surge Current 37.5 25 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 64 49.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 600 480 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Ptot Power Dissipation 120 52 W TC=25˚C TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C4D08120A Rev. A M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 8 A TJ=25°C IF = 8 A TJ=175°C IR Reverse Current 35 100 250 350 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 37 nC VR = 800 V, IF = 8 A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 560 37 27 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz 1. Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 1.26 Max. Unit Test Conditions Note °C/W Typical Performance 14 800 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 12 700 600 10 500 IR (μA) IF (A) 8 6 400 300 4 200 2 100 0 0 0 0.5 1 1.5 2 2.5 3 VF (V) Figure 1. Forward Characteristics 2 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C C4D08120A Rev. A 3.5 4 0 500 1000 1500 VR (V) Figure 2. Reverse Characteristics 2000 Typical Performance 80 140 70 120 10% 20% 30% 50% 70% DC 60 100 80 PTot (W) IF(peak) (A) 50 Duty Duty Duty Duty Duty 40 30 60 40 20 20 10 0 0 25 50 75 100 125 150 175 25 TC ˚C 50 75 100 TC ˚C 125 150 175 Figure 4. Power Derating Figure 3. Current Derating 600 50 45 500 40 35 400 25 C (pF) Qrr (nC) 30 20 15 10 300 200 100 5 0 0 0 200 400 600 800 0.1 1000 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 C4D08120A Rev. A 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1000 1000 20.0 20 18 18.0 16 16.0 EC Capacitive Energy (uJ) C 14 14.0 (A) IFSMIFSM (A) E (mJ) 12 12.0 10 10.0 8.08 100 100 TJ = 25°C TJ = 110°C 6.06 4.04 2.02 100 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 tp(s) tp (s) VR Reverse Voltage (V) VR (V) Junction To Case Impedance,(˚C/W) ZthJC (oC/W) Thermal Resistance Figure 7. Typical Capacitance Stored Energy 1 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 0.01 10E-3 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D08120A Rev. A 100E-3 1 Package Dimensions Package TO-220-2 Inches POS A B A C P F J C P OS Q D A E B B D X S E Y 1 2 G T Z U V W N H E F J G L H H L M F C G D PIN 2 Min Max .381 .410 9.677 10.414 .235 .255 5.969 Inc hes M illim eters .100 .120 2.540 M in M ax M in M ax .223 .337 5.664 .395 .410 10.033 10.414 .590 .615 14.986 .235 .255 5.969 6.477 .102 2.591 .143 .112 .153 .337 .337 8.560 1.105 1.147 .590 .610 14.986 .500 .550 .149 .153 3.785 0.197 28.626 1.127 R 1.147 S Q T S .0483° 3°3° T X X Y Y Z z 3° 3° 3° .094 .100 .014 .014 3°3° .395 .385 .130 .130 .054 5° 5° 5° 6°1.219 6° 3° 6° 3° 3° .110 .110 2.54 .021 .025 .356 5° .410 .150 5.5°3° 10.033 .410 3.302 .150 1.371 3° 5° 3° 3.048 8.560 15.621 .914 1.397 5.207 4.699 1.372 6° 6° 5° 3° 5° 2.388 2.794 2.794 .356 .533 .635 5° 3° 10.414 9.779 3.810 3.302 10.414 6° 5.5° 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking C4D08120A TO-220-2 C4D08120 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 6.477 2.845 3.632 3.886 8.560 28.067 29.134 15.494 12.700 13.970 3.886 29.134 R 0.197 .025 .550 .036 .635 .530 13.462 13.970 R 0.010 .045 .055 R 0.2541.143 .028 .036 .711 .914 .195 .205 4.953 .045 .055 1.143 1.397 .165 .185 4.191 .195 .205 4.953 5.207 .048 .180 .054 1.219 .170 4.318 4.572 U V V W W CASE Max M J L N M P N Q P U PIN 1 Millimeters Min C4D08120A Rev. A Diode Model Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT VT= 0.965 + (Tj * -1.3*10-3) RT= 0.096 + (Tj * 1.06*10-3) VT = 0.96 + (TJ* -2.1*10-3) RT = 0.06+(TJ* 8.0*10-4) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D08120A Rev. A Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power