CVFD20065A VRRM = Silicon Carbide Schottky Diode IF (TC=135˚C) = 26 A Z-Rec® Rectifier Features • • • • • • • Qc = 62 nC Package 650-Volt Schottky Rectifier Reduced VF for Improved Efficiency High Humidity Resistance Zero Forward and Reverse Recovery Voltage Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-220-2 Benefits • • • • 650 V Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • • Power Inverters Motor Drives EV Chargers Power Factor Correction Server Power Supplies Part Number Package Marking CVFD20065A TO-220-2 CVFD20065 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V VRSM Surge Peak Reverse Voltage 650 V VDC DC Peak Blocking Voltage 650 V 57 26 20 A TC=25˚C TC=135˚C TC=149˚C IF Continuous Forward Current IFRM Repetitive Peak Forward Surge Current 91 61.5 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 206 180 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 1400 1100 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse Power Dissipation 187.5 81 W TC=25˚C TC=110˚C Operating Junction and Storage Temperature -55 to +175 ˚C Ptot TJ , Tstg TO-220 Mounting Torque 1 Value CVFD20065A Rev. B 1 8.8 Nm M3 Screw lbf-in 6-32 Screw Note Electrical Characteristics Symbol VF Parameter Forward Voltage IR Reverse Current QC Total Capacitive Charge C Total Capacitance Typ. Max. Unit 1.35 1.65 1.45 1.80 V 8 2 80 30 5 300 Test Conditions Note IF = 20 A TJ=25°C IF = 20 A TJ=175°C μA VR = 650 V , TJ=25°C VR = 400 V , TJ=25°C μA VR = 650 V , TJ=175°C VR = 400 V , TJ=175°C 62 nC VR = 400 V di/dt = 500 A/μs TJ = 25°C 1100 113 108 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Typ. Unit 0.8 °C/W Thermal Resistance from Junction to Case Typical Performance 60 0.10 0.09 TJ = -55 °C 50 40 Reverse Leakage Current, IR (mA)IRR (mA) Foward Current, IF (A) IF (A) TJ = 25 °C TJ = 75 °C TJ = 125 °C 30 TJ = 175 °C 20 10 0 0.07 TJ = 175 °C 0.06 TJ = 125 °C 0.05 TJ = 75 °C 0.04 TJ = 25 °C 0.03 TJ = -55 °C 0.02 0.01 0.00 0.0 0.5 1.0 1.5 2.0 2.5 (V) V (V) FowardVVoltage, F F 3.0 Figure 1. Forward Characteristics 2 0.08 CVFD20065A Rev. B 3.5 4.0 0 100 200 300 400 500 (V) V (V) ReverseVVoltage, R R Figure 2. Reverse Characteristics 600 700 Typical Performance 200 200 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 150 175 150 PTot (W) IF(peak) (A) 125 100 100 75 50 50 25 0 25 50 75 100 125 150 0 175 25 50 75 Figure 3. Current Derating 1200 175 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 1000 80 70 Capacitance C (pF) (pF) CapacitiveQrr Charge, (nC) QC (nC) 150 Figure 4. Power Derating Conditions: TJ = 25 °C 90 125 TC (°C) TC (°C) 100 100 60 50 40 30 20 800 600 400 200 10 0 0 100 200 300 400 500 600 ReverseVVoltage, (V) VR (V) R Figure 5. Recovery Charge vs. Reverse Voltage 3 CVFD20065A Rev. B 700 0 0 1 10 100 ReverseVVoltage, (V) VR (V) R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 2525 10000 10000 2020 1000 1000 EC(mJ) (A) IIFSM (A) FSM 1515 1010 100 100 TJ = 25°C TJ = 110°C 55 00 0 0 100 100 200 200 300 400 300 400 500 500 600 600 10 10 1.E-05 1.E-04 1.E-03 1.E-02 1E-05 1E-04 1E-03 1E-02 700 700 ttp(s) (s) p VR (V) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) Thermal Thermal Resistance (˚C/W) Resistance (oC/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 Time, tp (s) T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 CVFD20065A Rev. B 100E-3 1 Package Dimensions A P F J C Q X T Z Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 A E B Y G Max D S E U H L M PIN 1 PIN 2 W N CASE Inc hes .100 .120M illim eters 2.540 M in M ax M in M ax .223 .337 5.664 .395 .410 10.033 10.414 .590 .255 .615 14.986 .235 5.969 6.477 F C .143 .102 G D E H F J G L H .337 8.560 1.105 .337 1.147 .590 .610 14.986 .500 .550 .149 .153 3.785 R 0.197 1.127 1.147 28.626 .025 .550 .036 .530 13.462 M J N L R 0.010 .045 .028 .195 .036 .045 .055 .165 .195 .205 .048 .180 .170 P V Millimeters Min C P OS B D 1 2 Inches POS Package TO-220-2 M N Q P S Q .0483° T S T U U V V W W 3°3° 3° 3° 3° .094 .100 .014 .014 X X Y Y 3°3° .395 .385 z Z .130 .130 .112 .054 .153 2.591 6°1.219 6° 3° 5° 3° 6° 5° 3° .110 .110 2.54 .021 .025 .356 .410 .150 5.5°3° 10.033 .410 3.302 .150 3.886 1.397 5.207 4.699 1.372 3° 1.371 6° 5° 3° 5° 3° 5° 2.388 2.794 .356 .533 6° 5° 3° 10.414 9.779 3.810 3.302 6° 2.794 .635 5.5° 10.414 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Recommended Solder Pad Layout TO-220-2 Part Number Package Marking CVFD20065A TO-220-2 CVFD20065 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 8.560 15.621 8.560 28.067 29.134 15.494 12.700 13.970 3.886 R 0.197 29.134 .635 .914 13.970 .055 R 0.2541.143 .711 .914 .205 4.953 1.143 1.397 .185 4.191 4.953 5.207 .054 1.219 4.318 4.572 5° 5° 3.632 2.845 3.048 CVFD20065A Rev. B Diode Model Diode Model CSD04060 VfVTfT== VTV+T+If*R If*RT T -3 -3 V VTT==0.965 + (Tj * -1.3*10 ) 1.0081+(T J* -1.6*10 ) -3 -4 RTT==0.096 + (Tj * 1.06*10 ) 0.0146+(T J* 1.7*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes C3D Spice models: http://response.cree.com/Request_Diode_model SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 CVFD20065A Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power