CAS100H12AM1 Summary Device Uses Cree introduces the industry’s first fully qualified and production ready All-Silicon Carbide power module. The module, rated at 100A current handling and 1200V blocking, allows higher efficiency, compact and lighter weight systems that can result in lower total system costs. • • • • • • High-Power converters Motor Drives Solar Inverters UPS and SMPS Induction Heating Mil/Aero Key Specifications Key Specifications • Package size 50 x 89 x 25 mm3 • Blocking voltage: 1200V • Current Rating: 100A • RDS(on) : (TC ≤ 100C) 16 mΩ Benefits Gate Driver boards Available (Top View) (Bottom View) • Enables compact and lightweight systems • High efficiency operation • Mitigate over-voltage protection • Ease of transistor gate controlents Competitive Comparison (TJ = 150 ˚C ) Supplier, P/N Switch / Diode VDS (V) ID (A) ESW (mJ) Qrr (nC) VISOL (kV) Cree, CAS100H12AM1 SiC MOSFET SiC Schottky Diode 1200V 105 3.5 1.6 6.0 Infineon, FF100R12RT4 IGBT4 EC4 Diode 1200V 100 20.5 19 4.0 1 Half-bridge module with Cree SiC MOSFET and SiC Diodes Module Construction Equivalent Electrical Circuit D1 • Populated with commercially released and qualified Cree SiC MOSFETs and Diodes • AlSiC baseplate decreases weight and increases temperature/ power cycling capability • Si3N4 AMB substrate provides rugged mechanical construction RGint G1 0 - 1K $430 1 - 5K $395 5 - 10K $370 > 10K Contact Cree [email protected] 2 6.8V Q1 VR2 22V G1 RTN S1/D2 RGint G2 G2 RTN Suggested Resale Price D1 VR1 D2 VR1 6.8V VR2 22V Q2 Gate Driver Boards S2 Target Customer • Typical power ranges from 10kW to 50kW per phase;>30kW per system • Looking for higher efficiency, less system volume and weight • Looking to increase Switching Frequency. (30kHz - 100kHz) • Bus voltages up to 960V