SEMIKRON SKM50GAL12T4

SKM50GAL12T4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
81
A
Tc = 80 °C
62
A
50
A
ICnom
ICRM
SEMITRANS® 2
Fast IGBT4 Modules
ICRM = 3xICnom
150
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
65
A
Tc = 80 °C
49
A
50
A
VGES
tpsc
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
Tj
Inverse diode
IF
SKM50GAL12T4
Tj = 175 °C
IFnom
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
IFRM
IFRM = 3xIFnom
150
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
270
A
-40 ... 175
°C
Tc = 25 °C
65
A
Tc = 80 °C
49
A
50
A
Tj
Freewheeling diode
IF
IFnom
IFRM
IFRM = 3xIFnom
150
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
270
A
-40 ... 175
°C
Tj
Typical Applications*
Module
•
•
•
•
It(RMS)
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – motor
Tj = 175 °C
Tterminal = Tterminal < 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
200
A
-40 ... 125
°C
4000
V
Characteristics
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
Symbol
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.1
V
Tj = 150 °C
2.2
2.4
V
VCE0
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
rCE
Tj = 25 °C
21.0
24.0
mΩ
30.0
32.0
mΩ
5.8
6.5
V
0.1
0.3
mA
IGBT
VCE(sat)
IC = 50 A
VGE = 15 V
chiplevel
VGE = 15 V
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 1.7 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
Tj = 25 °C
5
Tj = 150 °C
mA
f = 1 MHz
2.77
nF
f = 1 MHz
0.20
nF
f = 1 MHz
0.16
nF
QG
VGE = - 8 V...+ 15 V
280
nC
RGint
Tj = 25 °C
4.0
Ω
GAL
© by SEMIKRON
Rev. 0 – 08.03.2010
1
SKM50GAL12T4
Characteristics
Symbol
Conditions
td(on)
VCC = 600 V
IC = 50 A
VGE = ±15 V
RG on = 8.2 Ω
RG off = 8.2 Ω
di/dton = 1700 A/µs
di/dtoff = 670 A/µs
tr
Eon
td(off)
tf
Eoff
SEMITRANS® 2
Fast IGBT4 Modules
SKM50GAL12T4
Rth(j-c)
rF
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Qrr
Err
Rth(j-c)
Typical Applications*
•
•
•
•
IRRM
DC/DC – converter
Brake chopper
Switched reluctance motor
DC – motor
Qrr
Err
Rth(j-c)
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
max.
Unit
98
Tj = 150 °C
29
ns
Tj = 150 °C
5.5
mJ
Tj = 150 °C
325
ns
Tj = 150 °C
75
ns
Tj = 150 °C
4.5
mJ
ns
0.53
K/W
Tj = 25 °C
2.22
2.54
V
Tj = 150 °C
2.18
2.50
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
18.4
20.8
mΩ
25.6
28.0
mΩ
Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 1380 A/µs T = 150 °C
j
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
per diode
Freewheeling diode
VF = VEC IF = 50 A
VGE = 0 V
chip
VF0
rF
typ.
per IGBT
Inverse diode
VF = VEC IF = 50 A
VGE = 0 V
chip
VF0
IRRM
Features
min.
Tj = 150 °C
35
A
8.7
µC
3.6
mJ
0.84
K/W
Tj = 25 °C
2.22
2.54
V
Tj = 150 °C
2.18
2.50
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
18.4
20.8
mΩ
25.6
28.0
mΩ
Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 1380 A/µs T = 150 °C
j
VGE = ±15 V
Tj = 150 °C
VCC = 600 V
per Diode
35
A
8.7
µC
3.6
mJ
0.84
K/W
30
nH
Module
LCE
RCC'+EE'
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
TC = 25 °C
0.65
TC = 125 °C
1
0.04
to terminals M5
mΩ
mΩ
0.05
K/W
3
5
Nm
2.5
5
Nm
Nm
w
160
g
GAL
2
Rev. 0 – 08.03.2010
© by SEMIKRON
SKM50GAL12T4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 08.03.2010
3
SKM50GAL12T4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 0 – 08.03.2010
© by SEMIKRON
SKM50GAL12T4
SEMITRANS 2
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 08.03.2010
5