C4D20120A VRRM = 1200 V Silicon Carbide Schottky Diode IF (TC=135˚C) = 25.5 A Z-Rec Rectifier ® Qc Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Benefits • • • • • = 99 nC TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • Switch Mode Power Supplies Power Factor Correction Motor Drives Part Number Package Marking C4D20120A TO-220-2 C4D20120 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 53.5 25.5 20 A TC=25˚C TC=135˚C TC=150˚C IFRM Repetitive Peak Forward Surge Current 91 61 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 130 110 A TC=25˚C, tP=10 ms, Half Sine Pulse TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 1150 950 A TC=25˚C, tP=10 ms, Pulse TC=110˚C, tP=10 ms, Pulse 242 104 W TC=25˚C TC=110˚C Ptot Power Dissipation TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C 1 8.8 Nm lbf-in TO-220 Mounting Torque 1 Value C4D20120A Rev. C M3 Screw 6-32 Screw Note Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8 3 V IF = 20 A TJ=25°C IF = 20 A TJ=175°C IR Reverse Current 35 65 200 400 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 99 nC VR = 800 V, IF = 20A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 1500 93 67 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. RθJC Thermal Resistance from Junction to Case 0.62 Max. Unit Test Conditions Note °C/W Typical Performance 40 1 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 35 30 0.9 0.8 0.7 IR (mA) IF (A) 25 20 15 0.6 0.5 0.4 0.3 10 TJ=-55°C TJ= 25°C TJ= 75°C TJ =125°C TJ =175°C 0.2 5 0.1 0 0 1 2 3 VF (V) Figure 1. Forward Characteristics 2 C4D20120A Rev. C 4 0 0 500 1000 VR (V) Figure 2. Reverse Characteristics 1500 Typical Performance 250 180 160 IF(peak) (A) 120 200 Duty Duty Duty Duty Duty PTot (W) 10% 20% 30% 50% 70% DC 140 100 80 150 100 60 40 50 20 0 0 25 50 75 100 125 150 175 25 50 75 TC ˚C 150 175 Figure 4. Power Derating 140 1600 120 1400 1200 100 1000 80 C (pF) Qrr (nC) 125 TC ˚C Figure 3. Current Derating 60 800 600 40 400 20 200 0 0 0 200 400 600 800 1000 1200 0.1 VR (V) Figure 5. Recovery Charge vs. Reverse Voltage 3 100 C4D20120A Rev. C 1 10 100 VR (V) Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 50 50.0 10000 10000 45 45.0 40 40.0 1000 1000 30.0 30 IFSM(A) I (A) FSM E (mJ) EC Capacitive Energy (uJ) C 35 35.0 25 25.0 20 20.0 100 100 15 15.0 TJ = 25°C TJ = 110°C 10 10.0 5.05 10 10 1E-05 1E-04 1E-03 1E-02 1.E-05 1.E-04 1.E-03 1.E-02 0.00 0 200 400 600 800 1000 0 200 400 600 800 1000 ttp(s) (s) p VR Reverse Voltage (V) VR (V) Figure 7. Typical Capacitance Stored Energy Figure 8. Non-Repetitive Peak Forward Surge Current versus Pulse Duration (sinusoidal waveform) Thermal Resistance (˚C/W) 1 0.5 0.3 100E-3 0.1 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C4D20120A Rev. C 100E-3 1 Package Dimensions Package TO-220-2 Inches POS A B A F J C P B D X S E Y 1 2 G T Z U H V L M W N Max .381 .410 9.677 10.414 F C G D E H F J G .102 2.591 .143 .112 .153 .337 8.560 1.105 .337 1.147 .590 .610 14.986 .500 .550 .149 .153 3.785 0.197 28.626 1.127 R 1.147 L H .025 .550 .530 R 0.010 .045 .036 .635 13.462 13.970 .055 R 0.2541.143 .028 .195 .045 .165 .195 .048 .170 .711 .205 1.143 .185 4.953 .054 4.318 S Q T S .0483° 3°3° T 3° 3° .036 .055 .205 .180 .054 5° 5° U V V W W 3° .094 .100 5° X X Y Y Z 3°3° 5° .110 .014 .021 .014 .395 .410 .385 .130 .150 .130 1.219 6° 6° 3° 6° 3° 3° .110 2.54 .025 .356 5.5°3° 10.033 .410 3.302 .150 .914 4.953 1.397 4.191 5.207 1.219 4.572 1.371 3° 5° 3° .914 1.397 5.207 4.699 1.372 6° 6° .356 .533 .635 5° 3° 10.414 9.779 3.810 3.302 10.414 6° 5.5° 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish Part Number Package Marking C4D20120A TO-220-2 C4D20120 TO-220-2 C4D20120A Rev. C 8.560 15.621 2.794 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering 5 3.048 5° 3° 5° 2.388 2.794 Recommended Solder Pad Layout 6.477 2.845 3.632 3.886 8.560 28.067 29.134 15.494 12.700 13.970 3.886 R 0.197 29.134 M J L N M P N Q P z CASE PIN 2 Min D A E B U PIN 1 Max .235 .255 5.969 Inc hes M illim eters .100 .120 2.540 M in M ax M in M ax .223 .337 5.664 .395 .410 10.033 10.414 .590 .255 .615 14.986 .235 5.969 6.477 CP OS Q Millimeters Min Diode Model Diode Model CSD04060 VfVTfT== VTV+T+If*R If*RT T -3 V VTT==0.965 + (Tj *J*-1.3*10 ) -3) 0.97+(T -1.40*10 -3 RTT==0.096 + (Tj * 1.06*10 ) -4 0.023+(T J* 2.71*10 ) Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C4D20120A Rev. C Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power