Cree C4D20120A Silicon Carbide Schottky Diode - Zero

C4D20120A
VRRM = 1200 V
Silicon Carbide Schottky Diode
IF (TC=135˚C) = 25.5 A
Z-Rec Rectifier
®
Qc Features
•
•
•
•
•
Package
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Switching
Benefits
•
•
•
•
•
= 99 nC
TO-220-2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Part Number
Package
Marking
C4D20120A
TO-220-2
C4D20120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Reverse Voltage
1200
V
IF
Continuous Forward Current 53.5
25.5
20
A
TC=25˚C
TC=135˚C
TC=150˚C
IFRM
Repetitive Peak Forward Surge Current
91
61
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IFSM
Non-Repetitive Forward Surge Current
130
110
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
IF,Max
Non-Repetitive Peak Forward Current
1150
950
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
242
104
W
TC=25˚C
TC=110˚C
Ptot
Power Dissipation
TJ
Operating Junction Range
-55 to
+175
˚C
Tstg
Storage Temperature Range
-55 to
+135
˚C
1
8.8
Nm
lbf-in
TO-220 Mounting Torque
1
Value
C4D20120A Rev. C
M3 Screw
6-32 Screw
Note
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF = 20 A TJ=25°C
IF = 20 A TJ=175°C
IR
Reverse Current
35
65
200
400
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QC
Total Capacitive Charge
99
nC
VR = 800 V, IF = 20A
di/dt = 200 A/μs
TJ = 25°C
C
Total Capacitance
1500
93
67
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
Typ.
RθJC
Thermal Resistance from Junction
to Case
0.62
Max.
Unit
Test Conditions
Note
°C/W
Typical Performance
40
1
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
35
30
0.9
0.8
0.7
IR (mA)
IF (A)
25
20
15
0.6
0.5
0.4
0.3
10
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
0.2
5
0.1
0
0
1
2
3
VF (V)
Figure 1. Forward Characteristics
2
C4D20120A Rev. C
4
0
0
500
1000
VR (V)
Figure 2. Reverse Characteristics
1500
Typical Performance
250
180
160
IF(peak) (A)
120
200
Duty
Duty
Duty
Duty
Duty
PTot (W)
10%
20%
30%
50%
70%
DC
140
100
80
150
100
60
40
50
20
0
0
25
50
75
100
125
150
175
25
50
75
TC ˚C
150
175
Figure 4. Power Derating
140
1600
120
1400
1200
100
1000
80
C (pF)
Qrr (nC)
125
TC ˚C
Figure 3. Current Derating
60
800
600
40
400
20
200
0
0
0
200
400
600
800
1000
1200
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
100
C4D20120A Rev. C
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
50
50.0
10000
10000
45
45.0
40
40.0
1000
1000
30.0
30
IFSM(A)
I
(A)
FSM
E (mJ)
EC Capacitive
Energy (uJ)
C
35
35.0
25
25.0
20
20.0
100
100
15
15.0
TJ = 25°C
TJ = 110°C
10
10.0
5.05
10
10
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
ttp(s)
(s)
p
VR Reverse Voltage (V)
VR (V)
Figure 7. Typical Capacitance Stored Energy
Figure 8. Non-Repetitive Peak Forward Surge Current
versus Pulse Duration (sinusoidal waveform)
Thermal Resistance (˚C/W)
1
0.5
0.3
100E-3
0.1
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C4D20120A Rev. C
100E-3
1
Package Dimensions
Package TO-220-2
Inches
POS
A
B
A
F
J
C
P
B
D
X
S
E
Y
1 2
G
T
Z
U
H
V
L
M
W
N
Max
.381
.410
9.677
10.414
F C
G D
E
H
F
J G
.102
2.591
.143 .112 .153
.337
8.560
1.105 .337 1.147
.590
.610
14.986
.500
.550
.149
.153
3.785
0.197 28.626
1.127 R 1.147
L H
.025 .550
.530
R 0.010
.045
.036
.635
13.462 13.970
.055 R 0.2541.143
.028
.195
.045
.165
.195
.048
.170
.711
.205
1.143
.185
4.953
.054
4.318
S Q
T S
.0483°
3°3°
T
3°
3°
.036
.055
.205
.180
.054
5°
5°
U
V V
W W
3°
.094
.100
5°
X X
Y
Y
Z
3°3°
5°
.110
.014 .021
.014
.395
.410
.385
.130
.150
.130
1.219
6°
6° 3°
6°
3°
3°
.110
2.54
.025
.356
5.5°3°
10.033
.410
3.302
.150
.914
4.953
1.397
4.191
5.207
1.219
4.572
1.371
3°
5°
3°
.914
1.397
5.207
4.699
1.372
6°
6°
.356
.533
.635
5°
3°
10.414
9.779
3.810
3.302
10.414
6°
5.5°
3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip
Finish
Part Number
Package
Marking
C4D20120A
TO-220-2
C4D20120
TO-220-2
C4D20120A Rev. C
8.560
15.621
2.794
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
3.048
5°
3°
5°
2.388
2.794
Recommended Solder Pad Layout
6.477
2.845
3.632
3.886
8.560
28.067
29.134
15.494
12.700
13.970
3.886
R
0.197
29.134
M J
L
N
M
P
N
Q P
z
CASE
PIN 2
Min
D A
E B
U
PIN 1
Max
.235
.255
5.969
Inc hes
M illim eters
.100
.120
2.540
M in
M ax
M in
M ax
.223
.337
5.664
.395
.410
10.033 10.414
.590 .255 .615
14.986
.235
5.969
6.477
CP OS
Q
Millimeters
Min
Diode Model
Diode Model CSD04060
VfVTfT==
VTV+T+If*R
If*RT T
-3
V
VTT==0.965
+ (Tj *J*-1.3*10
) -3)
0.97+(T
-1.40*10
-3
RTT==0.096
+ (Tj * 1.06*10
) -4
0.023+(T
J* 2.71*10 )
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D20120A Rev. C
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power