Preliminary Data Sheet μPD5759T6J R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 Low Noise and High Gain Amplifier IC for Impedance Converter of Microphone DESCRIPTION The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting. FEATURES • Low noise • • • • • • : NV = −98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) Built-in the capacitor for RF noise immunity High ESD voltage APPLICATIONS • Microphone, Sensor etc. ORDERING INFORMATION Part Number μPD5759T6J-E4 Order Number μPD5759T6J-E4-A Package 3-pin thin-type lead-less minimold (Pb-Free) Marking 6Z Supplying Form • Embossed tape 8 mm wide • Pin 3 face the perforation side of the tape • Qty 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: μPD5759T6J CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 Page 1 of 5 μPD5759T6J ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Input Voltage (IN-GND) Input Current (IN-GND) Output Voltage (OUT-GND) Output Current (OUT-GND) Channel Temperature Operating Ambient Temperature Storage Temperature Symbol Vin Ratings −0.5 to +0.5 Unit V Iin Vout Iout Tch TA Tstg 0.5 0 to +5 1 130 −40 to +85 −65 to +150 mA V mA °C °C °C RECOMMENDED OPERATING RANGE (TA = +25°C) Parameter Note Supply Voltage Note: Symbol VDD MIN. 1.4 TYP. 2.0 MAX. 5.0 Unit V RL = 2.2 kΩ ELECTRICAL CHARACTERISTICS (TA = +25°C, RL = 2.2 kΩ, unless otherwise specified) Parameter Circuit Current Symbol IDD Input Capacitance Voltage Gain Cinput GV Reduced Voltage Characteristics ΔGVV Frequency Characteristics ΔGVf Output Noise Voltage NV Total Harmonic Distortion THD Test Conditions VDD = 2.0 V, Vin = 0 V VDD = 2.0 V, f = 1 MHz VDD = 2.0 V, Vin = 10 mVrms, Cin = 3 pF, f = 1 kHz, see TEST CIRCUIT VDD = 2.0 → 1.5 V, Vin = 10 mVrms, Cin = 3 pF, f = 1 kHz, see TEST CIRCUIT VDD = 2.0 V, Vin = 10 mVrms, Cin = 3 pF, f = 1 kHz → 110 Hz, see TEST CIRCUIT VDD = 2.0 V, Vin = 0 Vrms, Cin = 3 pF, A-Curve, see TEST CIRCUIT VDD = 2.0 V, Vout = 50 mVrms, Cin = 3 pF, f = 1 kHz, see TEST CIRCUIT MIN. 235 TYP. 310 MAX. 400 Unit μA − 8.0 2.0 9.0 − 10.0 pF dB − 1.0 − dB − 0 − dB − −98 − dBV − 0.3 − % TEST CIRCUIT Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion VDD IN Vin R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 3 pF OUT GND + 2.2 kΩ Vout 33 μF Page 2 of 5 μPD5759T6J TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 600 VOLTAGE GAIN vs. SUPPLY VOLTAGE 12 RL = 2.2 kΩ 10 Voltage Gain GV (dB) Circuit Current IDD (μA) 500 400 300 200 100 0 0 2 1 3 Cin = 3 pF RL = 2.2 kΩ Vin = 10 mVrms f = 1 kHz 0 1 2 3 5 4 Supply Voltage VDD (V) Supply Voltage VDD (V) VOLTAGE GAIN vs. FREQUENCY TOTAL HARMONIC DISTORTION vs. OUTPUT VOLTAGE 10 Total Harmonic Distortion THD (%) Voltage Gain GV (dB) 4 0 5 4 10 8 6 4 VDD = 2 V Cin = 3 pF RL = 2.2 kΩ Vin = 10 mVrms 2 0 10 100 1 000 10 000 1 VDD = 2 V Cin = 3 pF RL = 2.2 kΩ f = 1 kHz 0.1 10 100 000 1 000 100 Frequency f (Hz) Output Voltage Vout (mVrms) VOLTAGE GAIN vs. INPUT CAPACITANCE OUTPUT NOISE VOLTAGE vs. INPUT CAPACITANCE −95 Output Noise Voltage NV (dBV) 12 10 Voltage Gain GV (dB) 6 2 12 8 6 4 VDD = 2 V RL = 2.2 kΩ Vin = 10 mVrms f = 1 kHz 2 0 8 1 2 3 4 5 6 Input Capacitance Cin (pF) VDD = 2 V RL = 2.2 kΩ Vin = 0 Vrms −100 −105 1 2 3 4 5 6 Input Capacitance Cin (pF) Remark The graphs indicate nominal characteristics. R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 Page 3 of 5 μPD5759T6J PACKAGE DIMENSIONS (0.8) (Bottom View) 1.0±0.1 (0.8) 3 0.30+0.1 –0.05 1 1.2±0.1 6Z 1.2±0.05 0.15+0.1 –0.05 3-PIN THIN-TYPE LEAD-LESS MINIMOLD (UNIT: mm) 0.15+0.1 –0.05 2 (0.2) MAX. 0.33 0.11+0.1 –0.05 (0.2) PIN CONNECTIONS 1. OUT 2. IN 3. GND Remark ( ): Reference value R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 Page 4 of 5 μPD5759T6J RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Condition Symbol IR260 Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 CAUTION Do not use different soldering methods together (except for partial heating). 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