Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz NF = 0.5 dB TYP., Ga = 12 dB TYP. @VDS = 2 V, ID = 6 mA, f = 12 GHz (Reference Value) • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • DBS LNB gain-stage, Mix-stage • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3513M04-T2 Order Number NE3513M04-T2-A NE3513M04-T2B NE3513M04-T2B-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V84 Supplying Form • Embossed tape 8 mm wide • Pin 1 (Source), Pin 2 (Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3513M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS –3.0 V ID IDSS mA IG 80 μA Ptot 125 mW Tch +125 °C Drain Current Gate Current Total Power Dissipation Note Channel Temperature Storage Temperature Tstg –65 to +125 Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB °C CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Page 1 of 8 NE3513M04 RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit VDS +1 +2 +3 V Drain Current ID 3 10 15 mA Input Power Pin – – 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) MIN. TYP. MAX. Unit Gate to Source Leak Current Parameter IGSO VGS = –3.0 V – 0.5 10 μA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 30 60 mA Gate to Source Cut-off Voltage Symbol Test Conditions VGS (off) VDS = 2 V, ID = 100 μA –0.2 –0.5 –1.3 V Transconductance gm VDS = 2 V, ID = 10 mA 50 65 – mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz – 0.45 0.65 dB Associated Gain Ga 11.5 13 – dB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise specified) Parameter Symbol Noise Figure NF Associated Gain Ga R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Test Conditions VDS = 2 V, ID = 6 mA, f = 12 GHz Reference Value 0.5 Unit dB 12 dB Page 2 of 8 NE3513M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 60 VDS = 2 V 50 Drain Current ID (mA) 200 150 125 100 50 50 100 125 200 150 20 0 –0.8 250 –0.6 –0.4 –0.2 0 Ambient Temperature TA (°C) Gate to Source Voltage VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE f = 12 GHz VDS = 2 V 14 1.2 12 1.0 10 0.8 8 0.6 6 0.4 4 NFmin 0.2 50 Drain Current ID (mA) Ga Associated Gain Ga (dB) 1.4 60 16 1.6 0.0 0 5 10 15 20 VGS = 0 V 30 –0.1 V 20 –0.2 V –0.3 V –0.4 V 0 0.00 0 30 25 40 10 2 1.00 2.00 3.00 4.00 Drain Current ID (mA) Drain to Source Voltage VDS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 VDS = 2 V ID = 6 mA 24 22 20 18 16 Ga 14 12 10 8 6 NFmin 2 4 6 8 10 12 14 16 18 4 2 0 20 Frequency f (GHz) Minimum Noise Figure NFmin (dB) Minimum Noise Figure NFmin (dB) 30 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 24 VDS = 2 V 22 ID = 10 mA 20 18 16 14 12 10 8 6 Ga NFmin 2 4 6 8 10 12 14 16 18 Associated Gain Ga (dB) 0 Minimum Noise Figure NFmin (dB) 40 10 Associated Gain Ga (dB) Total Power Dissipation Ptot (mW) 250 4 2 0 20 Frequency f (GHz) Remark The graphs indicate nominal characteristics. R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Page 3 of 8 NE3513M04 S-PARAMETERS S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/ R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Page 4 of 8 NE3513M04 MOUNTING PAD DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) -Reference 1- 0.8 9 1. 0. 0 1 0.74 4 0 1. 1. 0 2 3 φ 0.5 TH -Reference 2- 3 4 0.5 1 1.3 1.25 0.6 2 1.6 0.6 Remark The mounting pad layout in this document is for reference only. R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Page 5 of 8 NE3513M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) 2.0±0.1 2 1 1.25 3 4 1.30 0.65 1.30 3 4 0.30+0.1 –0.05 0.11+0.1 –0.05 1 0.30+0.1 –0.05 0.59±0.05 (1.05) 0.65 0.60 0.65 1.25 2 1.25±0.1 V84 2.0±0.1 (Bottom View) 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 PIN CONNECTIONS 1. 2. 3. 4. R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Source Drain Source Gate Page 6 of 8 NE3513M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2% (Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below Condition Symbol IR260 HS350 CAUTION Do not use different soldering methods together (except for partial heating). R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Page 7 of 8 NE3513M04 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 Page 8 of 8 Revision History Rev. 1.00 Date Oct 18, 2011 NE3513M04 Data Sheet Description Summary Page - First edition issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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