PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold package. FEATURES • Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz • 3-pin super minimold package <R> ORDERING INFORMATION Part Number Order Number 2SC4226 2SC4226-T1 Package Quantity Supplying Form 2SC4226-A 3-pin super 50 pcs (Non reel) • 8 mm wide embossed taping 2SC4226-T1-A Minimold (Pb-Free) 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V IC 100 mA 150 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 1 of 6 2SC4226 ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 − − 1.0 μA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 1.0 μA VCE = 3 V, IC = 7 mA 40 110 250 – VCE = 3 V, IC = 7 mA 3.0 4.5 – GHz DC Current Gain hFE Note 1 RF Characteristics Gain Bandwidth Product fT ⏐S21e⏐ VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 – dB NF VCE = 3 V, IC = 7 mA, f = 1 GHz − 1.2 2.5 dB VCB = 3 V, IE = 0, f = 1 MHz − 0.7 1.5 pF 2 Insertion Power Gain Noise Figure Reverse Transfer Capacitance Cre Note 2 Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded <R> hFE CLASSIFICATION Rank R23/Y23 R24/Y24 R25/Y25 Marking R23 R24 R25 hFE Value 40 to 80 70 to 140 125 to 250 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 2 of 6 2SC4226 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 Free Air 200 150 100 50 0 25 50 75 100 125 150 1 0.5 0.2 0.1 1 2 5 10 20 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 160 Collector Current IC (mA) Collector Current IC (mA) 2 Collector to Base Voltage VCB (V) VCE = 3 V 10 0 0.5 μA 140 20 120 100 15 IB = 20 μ A 5 10 DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 20 Gain Bandwidth Product fT (GHz) 50 20 1 5 10 50 Collector Current IC (mA) μA 40 μ A 5 Collector to Emitter Voltage VCE (V) 100 μA 60 μ A 10 Base to Emitter Voltage VBE (V) VCE = 3 V μA 80 μ A 0 1 200 DC Current Gain hFE f = 1 MHz Ambient Temperature TA (˚C) 20 10 0.5 5 VCE = 3 V f = 1 GHz 10 5 2 1 0.5 1 5 10 50 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 3 of 6 2SC4226 INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT 15 VCE = 3 V IC = 7 mA 20 Insertion Power Gain |S21e|2 (dB) Insertion Power Gain |S21e|2 (dB) 24 16 12 8 4 0 0.1 0.2 0.5 1 2 5 VCE = 3 V f = 1 GHz 10 5 0 0.5 1 5 10 50 100 Collector Current IC (mA) Frequency f (GHz) NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE = 3 V f = 1 GHz Noise Figure NF (dB) 5 4 3 2 1 0 0.5 1 5 10 50 100 Collector Current IC (mA) Remark The graphs indicate nominal characteristics. R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 4 of 6 2SC4226 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www2.renesas.com/microwave/en/download.html R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 5 of 6 2SC4226 PACKAGE DIMENSIONS 3-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 2 3 1 0.3+0.1 –0 2.0±0.2 0.65 0.65 0.3+0.1 –0 1.25±0.1 0 to 0.1 0.9±0.1 0.15+0.1 –0.05 0.3 Marking PIN CONNECTIONS 1. Emitter 2. Base 3. Collector (EIAJ : SC-70) R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 Page 6 of 6 Revision History Rev. − 2.00 Date Dec 2003 Jun 29, 2011 2SC4226 Data Sheet Description Summary Page − p.1 p.2 Previous No. :PU10450EJ01V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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