1N5817WB~1N5819WB 1 A Surface Mount Schottky Barrier Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Top View Marking Code: 1N5817WB: A0 1N5818WB: ME 1N5819WB: SR Simplified outline SOD-123 and symbol H C Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol 1N5817WB 1N5818WB 1N5819WB Reverse Voltage VR E T M E S Average Forward Rectified Current IF(AV) Non-Repetitive Peak Forward Surge Current (8.3 ms Single Half Sine-Wave) IFSM Power Dissipation Ptot Tj Operating Temperature Range Tstg Storage Temperature Range Value Unit 20 30 40 V 1 A 9 A 450 mW - 55 to + 125 O C - 55 to + 125 O C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 1 mA Forward Voltage at IF = 0.1 A at IF = 1 A at IF = 3 A Reverse Current at VR = 20 V at VR = 30 V at VR = 40 V at VR = 4 V at VR = 6 V Total Capacitance at VR = 4 V, f = 1 MHz Symbol Min. Max. 20 30 40 - - 0.45 0.45 0.55 0.6 1N5817WB 1N5818WB 1N5819WB - 0.75 0.875 0.9 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5819WB - 1 1 1 0.05 0.075 - 120 1N5817WB 1N5818WB 1N5819WB 1N5819WB 1N5817WB 1N5818WB 1N5819WB V(BR)R VF IR Ctot Unit V V mA pF SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：13/02/2012 Rev：02 1N5817WB~1N5819WB H C E T M E S Fig.3 Typical Safe Operating Area Fig.4 Typical Reverse Characteristic Fig.5 Typical Total Capacitance SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：13/02/2012 Rev：02 1N5817WB~1N5819WB PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 H C A ∠ ALL ROUND c E T M E S HE A bp E D UNIT A bp c D E HE v ∠ mm 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.85 3.55 0.2 5 O SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：13/02/2012 Rev：02