RENESAS NV4V31MF_12

Preliminary Data Sheet
NV4V31MF
Blue-Violet Laser Diode
405 nm Blue-Violet Laser Light Source
R08DS0045EJ0100
Rev.1.00
Mar 05, 2012
DESCRIPTION
The NV4V31MF is a blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure
achieves a high optical power output of 175 mW (CW) at up to 85°C. The NV4V31MF can provide excellent linearity
from low to high output at high temperatures, and reduces the unevenness of beam divergence.
FEATURES
•
•
•
•
High optical output power
Peak emission wavelength
Wide operating temperature range
φ 3.8 mm small CAN package
Po = 175 mW @CW
λp = 405 nm TYP.
TC = −5 to +85°C
APPLICATIONS
• Blue-violet laser light source
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 1 of 7
NV4V31MF
Chapter Title
X
WITH GLASS
φ 1.2
0.8±0.05
90°±2°
0.25±0.07
PACKAGE DIMENSIONS (UNIT: mm)
Y
EFFECTIVE
DIAMETER
φ 0.65 MIN.
0.25±0.07
φ 3.8+0.0
–0.025
0.1±0.05
*1
1.3±0.08
φ 2.42±0.1
LD CHIP
Z
0.2 MIN.
STEM
REFERENCE
PLAIN
0.3 MAX.
6.5±0.5 1.0±0.1
2.02±0.08
φ 3.1 MAX.
3– φ 0.3±0.05
P.C.D.
φ 1.43±0.15
1
1
3
LD
3 (Stem GND)
2
0.2±0.1
BOTTOM VIEW
2
PIN CONNECTIONS
Remarks 1. Cap glass thickness: 0.25±0.03 mm
Cap glass refractive index:1.53 (λ = 405 nm)
2. Position accuracy of the LD chip based on the center of stem
Δ x = ±80 μm
Δ y = ±80 μm
Δ z = ±80 μm (*1)
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 2 of 7
NV4V31MF
<R>
Chapter Title
ORDERING INFORMATION
Part Number
NV4V31MF
Order Number
NV4V31MF-A
Rank
GV
KV
Package
Tray Packaging (250 p/Tray)
Individual Packaging (for small samples)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Optical Output Power (pulse) *1
Reverse Voltage of LD
Operating Case Temperature
Storage Temperature
Symbol
Po
Pp
VR
TC
Tstg
Ratings
180
360
2
−5 to +85
−40 to +85
Unit
mW
mW
V
°C
°C
Note: *1. Pulse condition: PW ≤ 50 ns, Duty ≤ 50%
RECOMMENDED OPERATING CONDITIONS
(TC = 25°C, unless otherwise specified)
Parameter
Optical Output Power (CW)
Symbol
Po
MAX.
175
Unit
mW
Conditions
MIN.
ELECTRO-OPTICAL CHARACTERISTICS
(TC = 25°C, unless otherwise specified)
Parameter
Threshold Current
Operating Current
Optical Voltage
Slope Efficiency
Peak Wavelength
Beam Divergence (lateral)
Beam Divergence (vertical)
Position Accuracy Angle
(lateral)
Position Accuracy Angle
(vertical)
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Symbol
Ith
Iop
Vop
ηd
λp
θ//
θ⊥
Δθ//
Δθ⊥
CW
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 20 mW, 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
CW, Po = 175 mW
MAX.
55
200
6.5
1.1
400
6
15
−3
TYP.
35
150
5.0
1.55
405
9
20
0
−3
0
3
415
12
25
3
Unit
mA
mA
V
W/A
nm
deg.
deg.
Page 3 of 7
NV4V31MF
TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
OPTICAL OUTPUT POWER
vs. FORWARD CURRENT
FORWARD VOLTAGE vs.
FORWARD CURRENT
10
160
140
20°C
25°C
30°C
40°C
50°C
60°C
70°C
80°C
90°C
120
100
80
60
40
20
0
0
50
100
150
8
4
2
0
50
100
150
200
Forward Current IF (mA)
Forward Current IF (mA)
POWER DEPENDENCE OF
DIFFERENTIAL EFFICIENCY
TEMPERATURE DEPENDENCE OF
DIFFERENTIAL EFFICIENCY
412
Peak Wavelength λp (nm)
N=5
408
406
404
402
400
60°C
70°C
80°C
90°C
6
0
200
410
0.011 nm/mW
0
50
100
150
408
406
404
402
400
0
200
0.064 nm/°C
20
40
60
80
Optical Output Power PO (mW)
Temperature (°C)
FFP (LATERAL)
FFP (VERTICAL)
175 mW
120 mW
80 mW
40 mW
−30
410
175 mW
N=5
−20
−10
0
10
20
30
Angle (degrees)
100
175 mW
120 mW
80 mW
40 mW
Relative Intensity
Peak Wavelength λp (nm)
20°C
25°C
30°C
40°C
50°C
180
Forward Voltage VF (V)
Optical Output Power PO (mW)
200
Relative Intensity
<R>
Chapter Title
−30
−20
−10
0
10
20
30
Angle (degrees)
Remark The graphs indicate nominal characteristics.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 4 of 7
NV4V31MF
Chapter Title
Wavelength Spectrum (175 mW)
1.2
1
1
Relative Intensity
Relative Intensity
Wavelength Spectrum (100 mW)
1.2
0.8
0.6
0.4
0.2
0
400
0.8
0.6
0.4
0.2
402
404
406
408
410
Wavelength λ (nm)
0
400
402
404
406
408
410
Wavelength λ (nm)
Remark The graphs indicate nominal characteristics.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 5 of 7
NV4V31MF
Chapter Title
NOTES ON HANDLING (UNIT: mm)
1. Recommended soldering conditions
• Peak Temperature
350°C or below
• Time
3 seconds or less
• Soldering of leads should be made at the point 2.0 mm from the root of the lead
• This device cannot be mounted using reflow soldering.
2. Usage cautions
(1) Take the following steps to ensure that the device is not damaged by static electricity.
• Wear an antistatic wrist strap when soldering the device.
We recommend a strap with a 1 MΩ resistor.
• Make sure that the work table and soldering iron are grounded.
• Make sure that the soldering iron does not leak.
(2) Do not subject the package to undue stress.
The package has a tensile strength of 1N.
Do not exceed this rating. Also, avoid bending the leads as much as possible.
If the leads must be bent, bend them only once, making sure to anchor the base of the lead.
(3) Do not allow the glass window of the package to become scratched or dirty.
Also, do not subject the glass window to external force.
(4) Be sure to attach a heat sink to sufficiently dissipate heat.
(5) Use the device as soon as possible after opening the aluminum moisture barrier bag.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 6 of 7
NV4V31MF
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
VISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER 450 mW MAX
WAVELENGTH 400 to 420 nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
AVOID EXPOSURE-Visible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
If the laser beam or its reflection enters your eye, it may cause injury to the eye or loss of eyesight.
(Note that, depending on the wavelength of the beam, the laser beam might not be visible.)
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
R08DS0045EJ0100 Rev.1.00
Mar 05, 2012
Page 7 of 7
Revision History
NV4V31MF Data Sheet
Rev.
Date
Page
0.01
1.00
Sep 08, 2011
Mar 05, 2012
−
Throughout
p.3
p.4, 5
Description
Summary
First edition issued
Preliminary Data Sheet -> Data Sheet
Modification of ORDERING INFORMATION
Addition of TYPICAL CHARACTERISTICS
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