KSH5027A KSH5027A క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡ KSH5027A KSH5027A High Voltage and High Reliability - High Speed Switching - Wide SOA Absolute Maximum Ratings TC=25 unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TJ TSTG 1100 800 7 3 10 1.5 50 150 -55~150 V V V A A A W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25) Junction Temperature Storage Temperature Electrical Characteristics (1) CHARACTERISTICS 3 Amperes NPN Silicon Power Transistor 50 Watts TO-220 1. Base 2. Collector 3. Emitter 12 3 TC=25 unless otherwise noted SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage VCBO IC=1mA, IE=0 1100 V Collector-Emitter Breakdown Voltage VCEO IC=5mA, IB=0 800 V Emitter-Base Breakdown Voltage VEBO IE=1mA, IE=0 7 V 800 V Collector-Emitter Sustaining Voltage ICEX(sus) IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped Collector Cut0off Current ICBO VCB=800V,IE=0 10 ᒺ Emitter Cutoff Current IEBO VEB=5V,IC=0 10 ᒺ DC Current Gain hFE1 hFE2 VCE=5V,IC=0.2A VCE=5V,IC=1A Collector-Emitter Saturation Voltage VCE(sat) IC=1.5A,IB=0.3A 2 V Base-Emitter Saturation Voltage VBE(sat) IC=1.5A,IB=0.3A 1.5 V Output Capacitance Cob 10 8 VCB=10V,IE=0, f=0.1MHz 60 ᓂ 15 ᓊ Current Gain Bandwidth Product fT VCE=10V,IC=0.2A Turn on Time ton Storage Time tstg Vcc=400V, Ic=5A IB1=-2.5A, IB2=2A RL=200ȍ (Note 2 ) Fall Time tf 40 0.5 ᓪ 3.0 ᓪ 0.3 ᓪ Notes ; 1. Pulse Test: Pulse WidthȝV'XW\&\FOH 2. Final Test Condition : UI9600, Vcc=5V, Ic=0.5A ( tstg Class = A : 3.0~4.0, B : 4.0~5.0, C : 5.0~6.0 ) hFE1 Classification R 15 ~ 30 S O 20 ~ 40 YWW Z KSH5027A S YWW Z SemiHow Symbol Y; year code, WW; week code hFE1 Classification క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡ KSH5027A HFE, DC CURRENT GAIN [A] IC, COLLECTOR CURRENT [A] Typical Characteristics VCE, COLLECTOR-EMITTER VOLTAGE [V] IC, COLLECTOR CURRENT [V] Figure 1. Static Characteristic VCE(SAT), SATURATION VOLTAGE [V] VBE(SAT), SATURATION VOLTAGE[V] Figure 2. DC Current Gain IC, COLLECTOR CURRENT [A] Figure 4. Base-Emitter Saturation Voltage tSTG, tF SWITCHING TIME [us] PC, COLLECTOR POWER DISSIPATION[W] Figure 3. Collector-Emitter Saturation Voltage IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] Figure 5. Resistive Load Switching Time Tc, CASE TEMPERATURE [] Figure 6. Power Derating క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡ KSH5027A IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] Typical Characteristics ( Continued ) VCE, COLLECTOR-EMITTER VOLTAGE [V] VCE, COLLECTOR-EMITTER VOLTAGE [V] Figure 7. Reverse Biased Safe Operating Area Figure 8. Forward Bias Safe Operating Area క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡ KSH5027A Package Dimension {vTYYWGOhPG 9.90±0.20 ±0 4.50±0.20 6.50±0.20 1.30±0.20 9.19±0.20 2.80±0.20 1.27±0.20 1.52±0.20 0 2.40±0.20 3.02±0.20 13.08±0.20 15.70±0.20 ij .2 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡ KSH5027A Package Dimension {vTYYWGOiPG ±0.20 0 .2 ±0 4.57±0.20 6.30±0.20 1.27±0.20 9.14±0.20 2.74±0.20 15.44±0.20 ij 1.27±0.20 2.67±0.20 13.28±0.20 2.67±0.20 0.81±0.20 2.54typ 2.54typ 0.40±0.20 Dimensions in Millimeters క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͢͝ͻΦΝΪ͑ͣͥ͑͢͡