HFS10N80 - SemiHow

BVDSS = 800 V
RDS(on) typ = 0.92 ȍ
HFS10N80
ID = 9.4 A
800V N-Channel MOSFET
TO-220F
FEATURES
‰
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Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 58 nC (Typ
(Typ.))
Extended Safe Operating Area
Lower RDS(ON) : 0.92 ȍ (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
1
2
3
1.Gate 2. Drain 3. Source
TC=25୅ unless otherwise specified
Parameter
Value
Units
800
V
VDSS
Drain Source Voltage
Drain-Source
ID
Drain Current
– Continuous (TC = 25ఁ͚
9.4*
A
Drain Current
– Continuous (TC = 100ఁ͚
5.9*
A
IDM
Drain Current
– Pulsed
36.0*
A
VGS
Gate-Source Voltage
ρͤ͡
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
920
mJ
IAR
Avalanche Current
(Note 1)
94
9.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
6.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚
͞ ͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
65
W
0.52
W/ఁ
-55 to +150
ఁ
300
ఁ
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
1.93
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡
HFS10N80
Dec 2010
Symbol
y
Parameter
unless otherwise specified
Test Conditions
Min
Typ
y
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.7 A
--
0.92
1.15
‫ש‬
VGS = 0 V
V, ID = 250 Ꮃ
800
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ
--
0.99
--
·͠ఁ
VDS = 800 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 640 V, TC = 125ఁ
--
--
10
Ꮃ
Off Characteristics
BVDSS
D i S
Drain-Source
Breakdown
B kd
V
Voltage
lt
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ
IGSSR
G t B d L
Gate-Body
Leakage
k
C
Current,
t
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ
--
2800
3600
Ꮔ
--
230
300
Ꮔ
--
20
25
Ꮔ
--
60
120
Ꭸ
--
150
300
Ꭸ
--
120
240
Ꭸ
--
120
240
Ꭸ
--
58
75
Οʹ
--
17.5
--
Οʹ
--
22
--
Οʹ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 400 V, ID = 9.4 A,
RG = 25 ‫ש‬
͙ͿΠΥΖ͚͑ͥͦ͝
VDS = 640V, ID = 9.4 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
9.4
ISM
Pulsed Source-Drain Diode Forward Current
--
--
36.0
VSD
Source-Drain
Source
Drain Diode Forward Voltage
IS = 9.4
94A
A, VGS = 0 V
--
--
14
1.4
V
trr
Reverse Recovery Time
--
950
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 9.4 A, VGS = 0 V
diF/dt = 100 A/ȝs (Note 4)
--
14.0
--
ȝC
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=17.3mH, IAS=10.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”9.4A, di/dt”300A/ȝs, VDD”BVDSS , Starting TJ =25 qC
4 P
4.
Pulse
l T
Testt : Pulse
P l Width ” 300ȝs,
300
D
Duty
t C
Cycle
l ” 2%
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡
HFS10N80
Electrical Characteristics TC=25 qC
HFS10N80
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID, Dra
ain Current [A]
1
10
ID, Dra
ain Current [A]
1
10
0
10
o
150 C
o
o
-55 C
25 C
0
10
୔ Notes :
1. 250ȝ s Pulse Test
2. TC = 25୅
-1
10
୔ Notes :
1. VDS = 50V
2. 250ȝ s Pulse Test
-1
10
-1
0
10
2
1
10
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse
e Drain Current [A]
RDS(ON) [ȍ ],
Drain-Sou
urce On-Resistance
2.5
2.0
VGS = 10V
VGS = 20V
1.5
1.0
1
10
0
10
150୅
25୅
୔ Notes :
1. VGS = 0V
2. 250ȝ s Pulse Test
୔ Note : TJ = 25୅
-1
0.5
0
5
10
15
20
25
10
30
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
4000
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
3000
2500
2000
Coss
1500
୔ Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
VDS = 160V
10
VGS, Gate-Source
e Voltage [V]
3500
Capacitanc
ce [pF]
0.2
ID, Drain Current [A]
VDS = 400V
VDS = 640V
8
6
4
2
* Note : ID = 9.4A
0
-1
10
0
0
10
1
10
0
10
20
30
40
50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡
(continued)
3.0
RDS(ON), (Normalized)
Drain--Source On-Resistance
1.2
BV
VDSS, (Normalized)
Drain-So
ource Breakdown Voltage
HFS10N80
Typical Characteristics
1.1
1.0
୔ Notes :
1. VGS = 0 V
2. ID = 250 ȝA
0.9
0.8
-100
-50
0
50
100
2.5
2.0
1.5
1.0
* Notes :
1. VGS = 10 V
0.5
2. ID = 4.7 A
150
0.0
-100
200
-50
0
50
100
150
200
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
o
10
Operation in This Area
is Limited by R DS(on)
2
10
10 Ps
8
ID, Dra
ain Current [A]
10
1 ms
10 ms
100 ms
0
10
DC
-1
10
* Notes :
o
1. TC = 25 C
6
4
2
o
2. TJ = 150 C
3. Single Pulse
0
25
-2
0
1
10
2
10
3
10
10
50
(t), Therma
al Response
0
* N o te s :
o
1 . Z T J C ( t ) = 1 . 9 3 C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z T J C ( t)
0 .0
05
-1
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
-2
10
150
D = 0 .5
0 .1
10
125
Figure 10. Maximum Drain Current
vs Case
C
T
Temperature
t
0 .2
10
100
o
Figure 9. Maximum Safe Operating Area
10
75
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
TJC
10
Z
ID, Drain Current [A]
100 Ps
1
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Fi
Figure
11.
11 Transient
T
i t Thermal
Th
l Response
R
Curve
C
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡
HFS10N80
Fig 12. Gate Charge Test Circuit & Waveform
50Kȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡
HFS10N80
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
G
Gate
Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡
HFS10N80
Package Dimension
{vT
{v
TYYWm
±0.20
±0.20
.20
±0
±0 20
2 54±0.20
2.54
6.68±0.20
0.70±0.20
12.42±0.20
3.30±±0.20
±0 20
2.76
2
76±0.20
1.47max
9.75±0.20
15.87±00.20
.1 8
3
ij
0 20
0.80
0
80±0.20
0 20
0.50
0
50±0.20
2.54typ
2.54typ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔΖΞΓΖΣ͑ͣ͢͡͡