HFS8N70S - SemiHow

BVDSS = 700 V
RDS(on) typ ȍ
HFS8N70S
ID = 7.0 A
700V N-Channel MOSFET
TO-220F
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 22 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
700
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
7.0*
A
Drain Current
– Continuous (TC = 100ఁ͚͑
4.0*
A
IDM
Drain Current
– Pulsed
28.0*
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
190
mJ
IAR
Avalanche Current
(Note 1)
7.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
14.7
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
48
W
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
0.38
W/ఁ͑
-55 to +150
ఁ͑
300
ఁ͑
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
2.6
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡
HFS8N70S
Dec 2012
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3.5 A͑
--
1.3
1.6
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
700
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
--
0.65
--
·͠ఁ͑
VDS = 700 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 560 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
940
1220
Ꮔ͑
--
105
135
Ꮔ͑
--
13
17
Ꮔ͑
--
17
45
Ꭸ͑
--
61
130
Ꭸ͑
--
81
170
Ꭸ͑
--
65
140
Ꭸ͑
--
22
29
Οʹ͑
--
5
--
Οʹ͑
--
9
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 350 V, ID = 7.0 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 560V, ID = 7.0 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
7.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
28.0
VSD
Source-Drain Diode Forward Voltage
IS = 7.0 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
365
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 7.0 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
3.4
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=7.3mH, IAS=7.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡
HFS8N70S
Electrical Characteristics TC=25 qC
HFS8N70S
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
101
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
2.5
VGS = 10V
2.0
VGS = 20V
1.5
1.0
Note : TJ = 25oC
0.5
0
3
6
9
12
100
150oC
10-1
0.2
15
25oC
0.4
ID, Drain Current [A]
0.6
Note :
1. VGS = 0V
2. 250Ps Pulse Test
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Capacitance [pF]
VGS, Gate-Source Voltage [V]
12
VDSV=DS130V
=140V
325V
VDSV = =350V
DS
520V
VVDS ==560V
10
8
DS
6
4
2
* Note : ID=7.0A
0
0
4
8
12
16
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
24
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡
(continued)
1.2
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFS8N70S
Typical Characteristics
1.1
1.0
Note :
1. VGS = 0 V
2. ID = 250PA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 3.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
8
Operation in This Area
is Limited by R DS(on)
10 Ps
100 Ps
1 ms
10 ms
6
ID, Drain Current [A]
101
100 ms
100
DC
10-1
* Notes :
1. TC = 25 oC
4
2
o
2. TJ = 150 C
3. Single Pulse
10-2
100
101
102
0
25
103
50
75
VDS, Drain-Source Voltage [V]
100
100
125
150
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
ZTJC(t), Thermal Response
ID, Drain Current [A]
102
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
0.2
* Notes :
1. ZTJC(t) = 2.6 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-1
0.02
PDM
0.01
t1
single pulse
10-2
10-5
10-4
10-3
10-2
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡
HFS8N70S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡
HFS8N70S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡
HFS8N70S
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
6.68±0.20
0.70±0.20
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
0
0.2
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͷΖΓ͑ͣͣ͑͢͡