HFP2N70S - SemiHow

BVDSS = 700 V
RDS(on) typ ȍ
HFP2N70S
ID = 1.6 A
700V N-Channel MOSFET
TO-220F
FEATURES
‰ Originative New Design
1
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 6.2 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
700
9
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ഒ)
1.6
$
Drain Current
– Continuous (TC = 100ഒ͚
1.0
$
IDM
Drain Current
– Pulsed
6.4
$
VGS
Gate-Source Voltage
ρ30
9
EAS
Single Pulsed Avalanche Energy
(Note 2)
62
P-
IAR
Avalanche Current
(Note 1)
1.6
$
EAR
Repetitive Avalanche Energy
(Note 1)
4.3
P-
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
9QV
PD
Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
43
:
0.34
:ഒ
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
ഒ
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
ഒ
(Note 1)
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
2.9
RșCS
Case-to-Sink
0.5
--
RșJA
Junction-to-Ambient
--
62.5
Units
ఁ͠Έ
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFP2N70S
Dec 2009
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ᒺ
2.0
--
4.0
9
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.8 A
--
5.0
7.0
വ
VGS = 0 V, ID = 250 ᒺ
700
--
--
9
ID = 250 ᒺ5HIHUHQFHGWRഒ
--
0.4
--
9ഒ
VDS = 700 V, VGS = 0 V
--
--
10
ᒺ
VDS = 560 V, TC = 125ఁ
--
--
100
ᒺ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
ᒹ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
ᒹ
--
280
360
ᓂ
--
30
40
ᓂ
--
5
6.5
ᓂ
--
12
24
ᓩ
--
10
20
ᓩ
--
45
90
ᓩ
--
25
50
ᓩ
--
6.2
8.0
Q&
--
1.1
--
Q&
--
2.2
--
Q&
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 350 V, ID = 1.6 A,
RG = 25 ‫ש‬
1RWH
VDS = 560V, ID = 1.6 A,
VGS = 10 V
1RWH
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
1.6
ISM
Pulsed Source-Drain Diode Forward Current
--
--
6.4
VSD
Source-Drain Diode Forward Voltage
IS = 1.6 A, VGS = 0 V
--
--
1.4
9
trr
Reverse Recovery Time
--
260
--
ᓩ
Qrr
Reverse Recovery Charge
IS = 1.6 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
1.09
--
˩&
$
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=45mH, IAS=1.6A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFP2N70S
Electrical Characteristics TC=25 qC
HFP2N70S
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10V
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
12
9
6
VGS = 20V
3
* Note : TJ = 25oC
0
0
1
2
3
4
5
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
400
Ciss
300
Coss
200
* Note ;
1. VGS = 0 V
2. f = 1 MHz
100
Crss
12
VDS = 140V
VGS, Gate-Source Voltage [V]
500
VDS = 350V
10
VDS = 560V
8
6
4
2
* Note : ID = 1.6A
0
10-1
0
10
1
10
0
0
2
4
6
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
8
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
(continued)
1.2
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HFP2N70S
Typical Characteristics
1.1
1.0
* Note :
1. VGS = 0 V
2. ID = 250 PA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 0.8 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
o
TJ, Junction Temperature [ C]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
2.0
Operation in This Area
is Limited by R DS(on)
101
1.5
ID, Drain Current [A]
0
10 ms
100 ms
10
DC
10-1
* Notes :
1. TC = 25 oC
10-2 0
10
2. TJ = 150 oC
3. Single Pulse
101
102
1.0
0.5
0.0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
ZTJC(t), Thermal Response
ID, Drain Current [A]
100 Ps
1 ms
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
* Notes :
1. ZTJC(t) = 2.9 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
0.05
10-1
0.02
0.01
PDM
single pulse
t1
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFP2N70S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFP2N70S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFP2N70S
Package Dimension
{vTYYWGOhP
20
4.50±0.20
1.30±0.20
6.50±0.20
0.
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
±
ij
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFP2N70S
{vTYYWGOiP
±0.20
0
.2
±0
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
ij
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡