HFP10N60S

BVDSS = 600 V
RDS(on) typ ȍ
HFP10N60S
ID = 9.5 A
600V N-Channel MOSFET
TO-220
FEATURES
˜ Originative New Design
1
˜ Superior Avalanche Rugged Technology
˜ Robust Gate Oxide Technology
2
3
1.Gate 2. Drain 3. Source
˜ Very Low Intrinsic Capacitances
˜ Excellent Switching Characteristics
˜ Unrivalled Gate Charge : 29 nC (Typ.)
˜ Extended Safe Operating Area
˜ Lower RDS(ON) ȍ7\S#9GS=10V
˜ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
600
9
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚
9.5
$
Drain Current
– Continuous (TC = 100ఁ͚
5.7
$
IDM
Drain Current
– Pulsed
38
$
VGS
Gate-Source Voltage
ρ30
9
EAS
Single Pulsed Avalanche Energy
(Note 2)
700
P-
IAR
Avalanche Current
(Note 1)
9.5
$
EAR
Repetitive Avalanche Energy
(Note 1)
15.6
P-
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
9QV
PD
Power Dissipation (TC = 25ଇ)
- Derate above 25ଇ
156
:
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
(Note 1)
1.25
:ഒ
-55 to +150
ഒ
300
ഒ
Thermal Resistance Characteristics
Typ.
Max.
RșJC
Symbol
Junction-to-Case
Parameter
--
0.8
RșCS
Case-to-Sink
0.5
--
RșJA
Junction-to-Ambient
--
62.5
Units
ഒ:
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
Nov 2007
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 ᒺ
2.0
--
4.0
9
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.75 A
--
0.67
0.8
വ
600
--
--
9
ID = 250 ᒺ, Referenced to 25୅
--
0.7
--
9ഒ
VDS = 600 V, VGS = 0 V
--
--
1
ᒺ
VDS = 480 V, TC = 125ఁ
--
--
10
ᒺ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 ᒺ
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
ᒹ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
ᒹ
--
1450
1885
ᓂ
--
145
190
ᓂ
--
13
17
ᓂ
--
23
55
ᓩ
--
69
150
ᓩ
--
144
300
ᓩ
--
77
165
ᓩ
--
29
38
Q&
--
6.8
--
Q&
--
10.3
--
Q&
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 9.5 A,
RG = 25 വ
1RWH
VDS = 480V, ID = 9.5 A,
VGS = 10 V
1RWH
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
9.5
ISM
Pulsed Source-Drain Diode Forward Current
--
--
38
VSD
Source-Drain Diode Forward Voltage
IS = 9.5 A, VGS = 0 V
--
--
1.4
9
trr
Reverse Recovery Time
--
420
--
ᓩ
Qrr
Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
4.2
--
˩&
$
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=14.2mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
Electrical Characteristics TC=25 qC
HFP10N60S
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
* Note : TJ = 25oC
0.0
0
5
10
15
20
25
30
35
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss
Capacitances [pF]
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
Coss
1500
Note ;
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
12
VGS, Gate-Source Voltage [V]
3000
VDS = 120V
10
VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 9.5A
0
10-1
100
101
0
0
4
8
12
16
20
24
28
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
32
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
Typical Characteristics
(continued)
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 4.75 A
0.5
0.0
-100
-50
0
100 Ps
1 ms
10 ms
100 ms
ID, Drain Current [A]
* Notes :
1. TC = 25 oC
6
4
2
2. TJ = 150 oC
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
8
DC
10-2
100
200
10 Ps
101
10-1
150
10
Operation in This Area
is Limited by R DS(on)
100
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
0.2
10-1
* Notes :
1. ZTJC(t) = 0.8 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
0.02
0.01
10-2
PDM
single pulse
t1
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
Package Dimension
{vTYYWGOhP
20
4.50±0.20
1.30±0.20
6.50±0.20
0.
9.19±0.20
2.80±0.20
1.27±0.20
1.52±0.20
±
ij
2.40±0.20
3.02±0.20
13.08±0.20
15.70±0.20
9.90±0.20
0.80±0.20
2.54typ
2.54typ
0.50±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡
HFP10N60S
{vTYYWGOiP
±0.20
0
.2
±0
4.57±0.20
6.30±0.20
1.27±0.20
9.14±0.20
2.74±0.20
15.44±0.20
ij
1.27±0.20
2.67±0.20
13.28±0.20
2.67±0.20
0.81±0.20
2.54typ
2.54typ
0.40±0.20
క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͨ͡͡