HFD1N60S_HFU1N60S

BVDSS = 600 V
RDS(on) typ ȍ
HFD1N60S / HFU1N60S
ID = 1.0 A
600V N-Channel MOSFET
D-PAK
I-PAK
2
FEATURES
1
1
2
3
‰ Originative New Design
3
HFD1N60S
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
HFU1N60S
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 3.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
600
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
1.0
A
Drain Current
– Continuous (TC = 100ఁ͚͑
0.6
A
IDM
Drain Current
– Pulsed
4.0
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
33
mJ
IAR
Avalanche Current
(Note 1)
1.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
2.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TA = 25ఁ) *
2.5
W
Power Dissipation (TC = 25ഒ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑- Derate above 25ഒ
28
W
0.22
W/ఁ͑
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
ఁ͑
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
ఁ͑
(Note 1)
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
4.53
RșJA
Junction-to-Ambient*
--
50
RșJA
Junction-to-Ambient
--
110
Units
ఁ͠Έ͑
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Sep 2009
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ͑
2.0
--
4.0
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 0.5 A͑
--
10
12
‫͑ש‬
VGS = 0 V, ID = 250 Ꮃ͑
600
--
--
V
ID = 250 Ꮃ͑͝΃ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑
--
0.6
--
·͠ఁ͑
VDS = 600 V, VGS = 0 V͑
--
--
1
Ꮃ͑
VDS = 480 V, TC = 125ఁ͑
--
--
10
Ꮃ͑
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ԩBVDSS Breakdown Voltage Temperature
Coefficient
/ԩTJ
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 30 V, VDS = 0 V
--
--
100
Ꮂ͑
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
Ꮂ͑
--
130
170
Ꮔ͑
--
22
29
Ꮔ͑
--
5.0
6.5
Ꮔ͑
--
7
24
Ꭸ͑
--
21
52
Ꭸ͑
--
13
36
Ꭸ͑
--
27
64
Ꭸ͑
--
3.0
4.0
Οʹ͑
--
0.5
--
Οʹ͑
--
1.3
--
Οʹ͑
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz͑
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 300 V, ID = 1 A,
RG = 25 ‫͑ש‬
͑
͙͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑ͿΠΥΖ͚͑ͥͦ͑͝
VDS = 480 V, ID = 1 A,
VGS = 10 V
͙ͿΠΥΖ͚͑ͥͦ͑͝
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
1.0
ISM
Pulsed Source-Drain Diode Forward Current
--
--
4.0
VSD
Source-Drain Diode Forward Voltage
IS = 1 A, VGS = 0 V
--
--
1.4
V
trr
Reverse Recovery Time
--
190
--
Ꭸ͑
Qrr
Reverse Recovery Charge
IS = 1 A, VGS = 0 V
diFGW $ȝV(Note 4)
--
0.53
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=59mH, IAS=1.0A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Electrical Characteristics TC=25 qC
HFD1N60S_HFU1N60S
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
25
IDR, Reverse Drain Current [A]
RDS(ON)[:],
Drain-Source On-Resistance
30
VGS = 10V
20
15
VGS = 20V
10
5
* Note : TJ = 25oC
0
0.0
0.5
1.0
1.5
2.0
2.5
ID, Drain Current[A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
200
150
Ciss
100
Coss
* Note ;
1. VGS = 0 V
2. f = 1 MHz
50
Crss
12
VGS, Gate-Source Voltage [V]
250
10
VDS = 120V
VDS = 300V
8
VDS = 480V
6
4
2
* Note : ID = 1A
0
10-1
100
101
0
0
1
2
3
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Typical Characteristics
(continued)
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
3.0
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 0.5 A
0.5
0.0
-100
-50
0
Operation in This Area
is Limited by R DS(on)
150
200
1.0
100 Ps
ID, Drain Current [A]
0.8
1 ms
100
10 ms
100 ms
DC
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
0.6
0.4
0.2
101
102
103
0.0
25
VDS, Drain-Source Voltage [V]
50
75
100
125
150
TC, Case Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
10-1
100
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
0
0.2
10
* Notes :
1. ZTJC(t) = 4.53 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-1
0.02
0.01
PDM
single pulse
t1
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Package Dimension
{vTY\YG
2.3±0.1
6.6±0.2
1.2±0.3
9.7+0.5
-0.3
2.7±0.3
0.5±0.05
5.6±0.2
1±0.2
5.35±0.15
1.2±0.3
0.05+0.1
-0.05
0.8±0.2
0.6±0.2
0.5+0.1
-0.05
2.3typ
2.3typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
{vTY\XG
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
^U_
±0.3
7.5·WU[G
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝΄ΖΡ͑ͣͪ͑͡͡
HFD1N60S_HFU1N60S
Package Dimension