HFD13N10/HFU13N10

BVDSS = 100 V
RDS(on) typ ȍ
HFD13N10/HFU13N10
ID = 10 A
100V N-Channel MOSFET
D-PAK
I-PAK
2
FEATURES
1
1
2
3
‰ Originative New Design
3
HFD13N10
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
HFU13N10
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 12 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ7\S#9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
TC=25୅ unless otherwise specified
Parameter
Value
Units
100
V
VDSS
Drain-Source Voltage
ID
Drain Current
– Continuous (TC = 25ఁ͚͑
10
A
Drain Current
– Continuous (TC = 100ఁ͚͑
6.3
A
IDM
Drain Current
– Pulsed
40
A
VGS
Gate-Source Voltage
ρ25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
95
mJ
IAR
Avalanche Current
(Note 1)
10
A
EAR
Repetitive Avalanche Energy
(Note 1)
4.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.0
V/ns
PD
Power Dissipation (TA = 25ఁ) *
2.5
W
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
40
W
0.32
W/ఁ͑
-55 to +150
ఁ͑
300
ఁ͑
(Note 1)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
3.13
RșJA
Junction-to-Ambient*
--
50
RșJA
Junction-to-Ambient
--
110
Units
ఁ͠Έ͑
* When mounted on the minimum pad size recommended (PCB Mount)
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
April 2012
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
4.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.0 A
--
0.142
0.18
Ÿ
VGS = 0 V, ID = 250 Ꮃ
100
--
--
V
ID = 250 Ꮃ, Referenced to25୅
--
0.09
--
V/୅
VDS = 100 V, VGS = 0 V
--
--
1
Ꮃ
VDS = 80 V, TC = 125୅
--
--
10
Ꮃ
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ǻBVDSS Breakdown Voltage Temperature
/ǻTJ
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 25 V, VDS = 0 V
--
--
100
Ꮂ
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -25 V, VDS = 0 V
--
--
-100
Ꮂ
--
450
590
Ꮔ
--
120
160
Ꮔ
--
28
36
Ꮔ
--
15
40
Ꭸ
--
80
170
Ꭸ
--
20
50
Ꭸ
--
25
60
Ꭸ
--
12
16
nC
--
4
--
nC
--
5.5
--
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
VDS = 50 V, ID = 12.8 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 80V, ID = 12.8 A,
VGS = 10 V
(Note 4,5)
Gate-Drain Charge
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
10
ISM
Pulsed Source-Drain Diode Forward Current
--
--
40
VSD
Source-Drain Diode Forward Voltage
IS = 10 A, VGS = 0 V
--
--
1.5
V
trr
Reverse Recovery Time
--
72
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 12.8 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
0.17
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1.43mH, IAS=10A, VDD=25V, RG=25:, Starting TJ =25qC
3. ISD”$GLGW”$ȝV9DD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
Electrical Characteristics TC=25 qC
HFD13N10_HFU13N10
ID, Drain Current [A]
ID, Drain Current [A]
Typical Characteristics
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
Note : TJ = 25oC
0.0
0
10
20
30
40
50
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capacitances [pF]
800
Ciss
Coss
600
400
Note ;
1. VGS = 0 V
2. f = 1 MHz
Crss
200
12
VGS, Gate-Source Voltage [V]
1000
VDS = 50V
10
VDS = 80V
8
6
4
2
* Note : ID = 12.8A
0
10-1
100
101
0
0
3
6
9
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
15
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
Typical Characteristics
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
(continued)
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
10
Operation in This Area
is Limited by R DS(on)
102
ID, Drain Current [A]
8
100 Ps
101
1 ms
10 ms
DC
100
* Notes :
1. TC = 25 oC
6
4
2
2. TJ = 150 oC
3. Single Pulse
10-1
100
0
25
102
101
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
ZTJC(t), Thermal Response
ID, Drain Current [A]
10 Ps
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
100
* Notes :
1. ZTJC(t) = 3.13 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.2
0.1
0.05
10-1
0.02
PDM
0.01
t1
single pulse
10-5
10-4
10-3
10-2
t2
10-1
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
Package Dimension
{vTY\YG
2.3±0.1
6.6±0.2
1.2±0.3
9.7+0.5
-0.3
2.7±0.3
0.5±0.05
5.6±0.2
1±0.2
5.35±0.15
1.2±0.3
0.05+0.1
-0.05
0.8±0.2
0.6±0.2
0.5+0.1
-0.05
2.3typ
2.3typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
{vTY\XG
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
^U_
±0.3
7.5·WU[G
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͲΡΣΚΝ͑ͣͣ͑͢͡
HFD13N10_HFU13N10
Package Dimension