RENESAS 1SS120TA-E

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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
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1SS120
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0565-0400
(Previous: ADE-208-167C)
Rev.4.00
Mar 24, 2005
Features
• Low capacitance. (C = 3.0 pF max)
• Short reverse recovery time. (trr = 3.5 ns max)
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
1SS120
Light Blue
Mark
1
Package Name
MHD
1
Pin Arrangement
2
1
Cathode band
1. Cathode
2. Anode
Rev.4.00 Mar 24, 2005 page 1 of 4
Package Code
(Previous Code)
GRZZ0002ZC-A
(MHD)
1SS120
Absolute Maximum Ratings
(Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Average rectified current
Symbol
VRM
Value
70
Unit
V
VR
IO
60
150
V
mA
Peak forward current
Non-Repetitive peak forward surge current
IFM
IFSM *
450
1
mA
A
Power dissipation
Junction temperature
Pd
Tj
250
175
mW
°C
Storage temperature
Note: Within 1s forward surge current.
Tstg
−65 to +175
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
Reverse current
VF
IR
—
—
—
—
0.8
0.1
V
µA
IF = 10 mA
VR = 60 V
Capacitance
Reverse recovery time
C
trr *
—
—
—
—
3.0
3.5
pF
ns
VR = 1 V, f = 1 MHz
IF = 10 mA, VR = 6 V, RL = 50 Ω
Note: Reverse recovery time test circuit
DC
Supply
0.1 µF
Ro = 50 Ω
3 kΩ
Pulse
Generator
Sampling
Oscilloscope Rin = 50 Ω
Trigger
Rev.4.00 Mar 24, 2005 page 2 of 4
1SS120
Main Characteristic
10–1
10–4
Ta = 125°C
Reverse current IR (A)
125
°C
Ta =
75°C
Ta =
25°C
Ta =
-25°C
10–2
Ta =
Forward current IF (A)
10–5
10
–3
Ta = 75°C
10–6
10–7
Ta = 25°C
10–8
10–4
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
1.2
Fig.1 Forward current vs. Forward voltage
f = 1MHz
Capacitance C (pF)
10
1.0
0.1
1.0
10
Reverse voltage VR (V)
100
Fig.3 Capacitance vs. Reverse voltage
Rev.4.00 Mar 24, 2005 page 3 of 4
10–9
0
20
40
60
80
Reverse voltage VR (V)
100
Fig.2 Reverse current vs. Reverse voltage
1SS120
Package Dimensions
JEITA Package Code
RENESAS Code
Previous Code

GRZZ0002ZC-A
MHD / MHDV
L
φb
MASS[Typ.]
0.084g
E
L
φD
Reference
Symbol
φb
φD
E
L
Rev.4.00 Mar 24, 2005 page 4 of 4
Dimension in Millimeters
Min
26.0
Nom
0.4
2.0
-
Max
2.4
-
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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