HAT2169H Datasheet - Renesas Electronics

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HAT2169H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0119-0400
Rev.4.00
Sep 20, 2005
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.8 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
5
D
5
3
12
4
G
4
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Rev.4.00 Sep 20, 2005 page 1 of 7
Symbol
VDSS
VGSS
ID
Note1
ID(pulse)
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
40
±20
50
200
50
30
72
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
HAT2169H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Rev.4.00 Sep 20, 2005 page 2 of 7
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
40
±20
—
—
1.0
—
—
39
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
2.8
4.0
65
6650
890
360
0.5
45
21
10
15
64
Max
—
—
±10
1
2.5
3.5
6.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
—
—
—
—
55
9.5
0.83
40
—
—
1.08
—
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 25 A, VGS = 10 V Note4
ID = 25 A, VGS = 4.5 V Note4
ID = 25 A, VDS = 10 V Note4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 10 V, VGS = 4.5 V,
ID = 50 A
VGS = 10 V, ID = 25 A,
VDD ≅ 10 V, RL = 0.4 Ω,
Rg = 4.7 Ω
IF = 50 A, VGS = 0 Note4
IF = 50 A, VGS = 0
diF/ dt = 100 A/ µs
HAT2169H
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
ID (A)
100
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
0
50
100
150
Case Temperature
1m
PW
s
DC = 1
Op 0 m
s
era
tio
n
10
1
Operation in
this area is
limited by RDS(on)
0.1
0.01
0.1
200
1
3
10
30
100
VDS (V)
100
Pulse Test
VDS = 10 V
Pulse Test
3.6 V
3.4 V
60
80
60
3.2 V
40
VGS = 3.0 V
20
Drain Current
Drain Current
0.3
Typical Transfer Characteristics
ID (A)
ID (A)
80
10 V
4.5 V
3.8 V
Tc = 25°C
1 shot Pulse
Drain to Source Voltage
Tc (°C)
Typical Output Characteristics
100
10
µs
0µ
s
10
Tc = 75°C
40
20
25°C
–25°C
0
2
4
6
8
Drain to Source Voltage
0
10
200
150
ID = 50 A
100
20 A
50
10 A
0
4
8
12
Gate to Source Voltage
Rev.4.00 Sep 20, 2005 page 3 of 7
16
20
VGS (V)
6
10
8
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Voltage VDS(on) (mV)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
4
Gate to Source Voltage
VDS (V)
250
2
100
Pulse Test
30
10
VGS = 4.5 V
3
10 V
1
0.3
0.1
1
3
10
30
Drain Current
100
300
ID (A)
1000
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (mΩ)
HAT2169H
10
Pulse Test
8
ID = 10 A, 20 A
50 A
6
VGS = 4.5 V
4
10 A, 20 A, 50 A
2
10 V
0
-25
0
25
50
75
100 125 150
Case Temperature
Tc
1000
300
100
Tc = –25°C
30
10
75°C
3
25°C
1
0.1
0.1
3
10
30
100
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1
Drain Current ID (A)
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
0.1
0.3
1
3
10
Reverse Drain Current
30
3000
1000
Coss
300
Crss
100
30
VGS = 0
f = 1 MHz
10
100
0
IDR (A)
5
12
VDS = 25 V
20
8
VDD
10 V
4
5V
0
40
80
Gate Charge
Rev.4.00 Sep 20, 2005 page 4 of 7
120
160
Qg (nc)
20
25
30
0
200
1000
Switching Time t (ns)
30
16
VGS (V)
VGS
VDD = 5 V
10 V
25 V
40
10
20
ID = 50 A
15
Switching Characteristics
Gate to Source Voltage
50
10
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
0.3
(°C)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
VDS = 10 V
Pulse Test
0.3
300
100
td(off)
30
td(on)
tf
10
tr
3
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
0.1 0.2 0.5 1
2
5 10 20
Drain Current
ID (A)
50 100
HAT2169H
(mJ)
Reverse Drain Current vs.
Source to Drain Voltage
80
Repetitive Avalanche Energy EAR
Reverse Drain Current IDR (A)
100
10 V
VGS = 0
5V
60
40
20
Pulse Test
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
Maximum Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 30 A
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 4.17°C/ W, Tc = 25°C
0.1
0.05
PDM
0.02
1
0.0
0.03
0.01
10 µ
D=
lse
t
ho
PW
T
PW
T
pu
1s
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
EAR =
L
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
IAP
Rg
D. U. T
VDS
VDD
ID
Vin
15 V
50 Ω
0
Rev.4.00 Sep 20, 2005 page 5 of 7
VDD
HAT2169H
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
Rev.4.00 Sep 20, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2169H
Package Dimensions
JEITA Package Code
RENESAS Code
SC-100
PTZZ0005DA-A
Package Name
MASS[Typ.]
LFPAK
Unit: mm
0.080g
4.9
5.3 Max
4.0 ± 0.2
+0.05
4.2
6.1 –0.3
+0.1
3.95
5
4
0° – 8°
+0.25
+0.05
0.20 –0.03
0.6 –0.20
1.3 Max
1
1.1 Max
+0.03
0.07 –0.04
3.3
1.0
0.25 –0.03
0.75 Max
0.10
1.27
0.40 ± 0.06
0.25 M
(Ni/Pd/Au plating)
Ordering Information
Part Name
HAT2169H-EL-E
Quantity
2500 pcs
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 20, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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