To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. 2SK1809 Silicon N Channel MOS FET REJ03G0976-0200 (Previous: ADE-208-1323) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 S 2SK1809 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Symbol VDSS Ratings 600 Unit V VGSS ID ±30 5 V A 20 5 A A ID(pulse) IDR *1 *2 Channel dissipation Channel temperature Pch Tch 60 150 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Tstg –55 to +150 W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 600 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±30 30 — — — — ±10 V µA µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 2.0 — — 250 3.0 µA µA V VDS = 500 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) — 1.1 1.5 Ω ID = 2.5 A, VGS = 10 V* |yfs| 3.0 5.0 — S ID = 2.5 A, VDS = 10 V* Input capacitance Output capacitance Ciss Coss — — 1000 250 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 45 12 — — pF ns tr 45 105 — — ns ns Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 55 0.9 — — ns V trr — 500 — ns Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 6 Test Conditions ID = 10 mA, VGS = 0 3 ID = 2.5 A, VGS = 10 V, RL = 12 Ω IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/µs 3 2SK1809 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 s 0 10 µs m 3 m ra tio ) 0.1 pe ot 0.3 O Sh Operation in this area is limited by R DS(on) (1 C s D 1 s 10 30 µ 1 60 = Drain Current ID (A) 10 10 PW Channel Dissipation Pch (W) 90 n (T c = Ta = 25°C 25 °C ) 0.05 50 0 100 150 300 1000 Typical Transfer Characteristics 10 6V VDS = 20 V Pulse Test Pulse Test 8 Drain Current ID (A) 5V 4.5 V 6 4 4V 2 10 20 8 6 4 TC = 75°C 25°C –25°C 2 3.5 V 30 40 50 0 4 2 6 10 8 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 8 ID = 5 A 6 4 2A 2 1A 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) 100 Typical Output Characteristics VGS = 3 V Drain to Source Saturation Voltage VDS (on) (V) 30 Drain to Source Voltage VDS (V) 10 V 0 10 Case Temperature TC (°C) 10 0 3 1 50 Pulse Test 20 10 5 VGS = 10 V 2 1 15 V 0.5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 2SK1809 Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 5 4 VGS = 10 V Pulse Test 3 ID = 5 A 2A 2 1A 1 0 –40 40 0 80 120 160 75°C 2 1 0.5 0.2 0.1 0.05 1 5 2 VGS = 0 f = 1 MHz Capacitance C (pF) 50 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 0.1 0.2 2 1 0.5 Ciss 1,000 Coss 100 Crss 10 0 5 10 30 20 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 20 1,000 800 16 VDD = 100 V 250 V 400 V 12 600 VGS VDS 200 8 ID = 5 A 4 VDD = 400 V 250 V 100 V 0 0 0.5 10,000 100 400 0.2 Typical Capacitance vs. Drain to Source Voltage 200 10 0.05 0.1 Body to Drain Diode Reverse Recovery Time 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 40 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) 5 500 20 –25°C TC = 25°C VDS = 20 V Pulse Test Drain Current ID (A) 1,000 Drain to Source Voltage VDS (V) 10 Case Temperature TC (°C) VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 0.1 % Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 200 td (off) 100 tf 50 tr 20 td (on) 10 5 0.1 0.2 0.5 1 2 Drain Current ID (A) 5 10 2SK1809 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 10 Pulse Test 8 6 4 VGS = 5 V, 10 V 2 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 Tc = 25°C D=1 0.5 0.3 0.2 0.1 0.05 0.1 θch – c(t) = γs(t) • θch – c θch – c = 2.08°C / W, Tc = 25°C 0.02 0.03 0.01 T 1 shot Pulse 0.01 10 µ PW D= T P DM 100 µ 1m 100 m 10 m PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T. RL Vin 10 V 50 Ω Rev.2.00 Sep 07, 2005 page 5 of 6 V.DD =. 30 V Vout 10% 10% 90% td (on) tr 10% 90% td (off) tf 2SK1809 Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1809-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is distributor for the latest product therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distrib information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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