RENESAS HAT2195R-EL-E

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April 1st, 2010
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HAT2195R
Silicon N Channel Power MOS FET
Power Switching
REJ03G0060-0300Z
Rev.3.00
Apr.01.2004
Features
•
•
•
•
•
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 4.6 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
5 6 7 8
D D D D
8
5
7 6
4
G
3
1 2
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
4
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-a Note3
Tch
Tstg
30
±20
18
144
18
18
32.4
2.5
50
150
–55 to +150
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Rev.3.00, Apr.01.2004, page 1 of 6
HAT2195R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V(BR)DSS
IGSS
IDSS
VGS(off)
30
—
—
1.0
—
—
—
—
—
± 0.1
1
2.5
V
µA
µA
V
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
—
—
25
—
—
—
—
—
—
—
4.6
5.8
42
3400
785
250
1.0
23
10
5.5
5.8
8.4
—
—
—
—
—
—
—
—
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ID = 9 A, VGS = 10 V Note4
ID = 9 A, VGS = 4.5 V Note4
ID = 9 A, VDS = 10 V Note4
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
td(on)
tr
td(off)
tf
VDF
trr
12
16
50
6.5
0.80
32
—
—
—
—
1.04
—
ns
ns
ns
ns
V
ns
VGS = 10 V, ID = 9 A
VDD ≅ 10 V
RL = 1.11 Ω
Rg = 4.7 Ω
IF = 18 A, VGS = 0 Note4
Body–drain diode reverse recovery
time
—
—
—
—
—
—
VDD = 10 V
VGS = 4.5 V
ID = 18 A
IF = 18 A, VGS = 0
diF/ dt = 100 A/ µs
Notes: 4. Pulse test
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
500
3.0
10 µs
ID (A)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Drain Current
Channel Dissipation
Pch (W)
4.0
2.0
1.0
100
PW
10
DC
10
1m
0µ
s
=1
s
0m
s
Op
era
tio
n
(P
W N
1 Operation in
< 1 ote
0s 5
this area is
)
limited by RDS(on)
0.1
Ta = 25 °C
1 shot Pulse
0
50
100
Ambient Temperature
150
Ta (°C)
200
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage VDS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Rev.3.00, Apr.01.2004, page 2 of 6
HAT2195R
Typical Output Characteristics
2.8 V
V DS = 10 V
Pulse Test
40
4V
30
2.6 V
20
VGS = 2.4 V
10
ID (A)
40
10 V
Typical Transfer Characteristics
50
Drain Current
Drain Current
ID (A)
50
30
25°C
20
Tc = 75°C
–25°C
10
Pulse Test
0
2
4
6
Drain to Source Voltage
0
8
10
VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
160
ID = 20 A
80
10 A
40
Drain to Source On State Resistance
RDS(on) (mΩ)
0
5A
4
8
12
Gate to Source Voltage
20 A
5 A, 10 A
8
VGS = 4.5 V
6
ID = 5 A, 10 A, 20 A
4
10 V
2
–25
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00, Apr.01.2004, page 3 of 6
20
10
VGS = 4.5 V
5
10 V
2
1
16
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
12
Pulse Test
10
Drain to Source On State Resistance
RDS(on) (mΩ)
120
Pulse Test
1
3
30 100 300
10
Drain Current ID (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
VDS(on) (mV)
Drain to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
5
4
VGS (V)
1
2
3
Gate to Source Voltage
1000
300
Tc = –25 °C
100
30
10
75 °C
25 °C
3
1
VDS = 10 V
Pulse Test
0.3
0.1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2195R
Body Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
10000
Ciss
Capacitance C (pF)
Reverse Recovery Time trr (ns)
100
50
20
10
0.1
3000
1000
Coss
300
Crss
100
30
di/dt = 100 A/µs
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
0
5
VDD = 25 V
10 V
5V 8
10
4
VDD = 25 V
10 V
5V
20
40
60
80
Gate Charge Qg (nC)
0
100
Switching Time t (ns)
12
20
0
16
VGS (V)
VGS
VDS
100
td(off)
30
VGS = –5.0 V
20
10
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
Rev.3.00, Apr.01.2004, page 4 of 6
1.6
VSD (V)
tr
td(on)
10
tf
3
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty < 1 %
1
0.1
2.0
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current IDR (A)
10 V
5V
(V)
0.3
1
3
Drain Current
10
30
ID (A)
100
Maximum Avalanche Energy vs.
Channel Temperature Derating
50
30
30
300
Reverse Drain Current vs.
Source to Drain Voltage
40
25
Switching Characteristics
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
30
20
1000
20
ID = 18 A
40
15
Drain to Source Voltage VDS
Dynamic Input Characteristics
50
10
50
40
IAP = 18 A
VDD = 15 V
duty < 0.1 %
Rg > 50 Ω
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
HAT2195R
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γs (t)
10
1
D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
θch - f(t) = γs (t) x θch - f
θch - f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0.01
PDM
0.001
o
1sh
0.0001
10 µ
tp
uls
D=
e
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
EAR =
L
VDS
Monitor
1
2
L • IAP2 •
VDSS
VDSS – VDD
I AP
Monitor
V (BR)DSS
IAP
Rg
VDS
VDD
D. U. T
ID
Vin
15 V
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
Rg
90%
D.U.T.
RL
Vin
Vin
10 V
VDS
= 10 V
Vout
10%
10%
90%
td(on)
Rev.3.00, Apr.01.2004, page 5 of 6
tr
10%
90%
td(off)
tf
HAT2195R
Package Dimensions
As of January, 2003
Unit: mm
3.95
4.90
5.3 Max
5
8
*0.22 ± 0.03
0.20 ± 0.03
4
1.75 Max
1
0.75 Max
+ 0.10
6.10 – 0.30
1.08
0.14 – 0.04
*0.42 ± 0.08
0.40 ± 0.06
+ 0.11
0˚ – 8˚
1.27
+ 0.67
0.60 – 0.20
0.15
0.25 M
*Dimension including the plating thickness
Base material dimension
Package Code
JEDEC
JEITA
Mass (reference value)
FP-8DA
Conforms
—
0.085 g
Ordering Information
Part Name
Quantity
Shipping Container
HAT2195R-EL-E
2500pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00, Apr.01.2004, page 6 of 6
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .1.0