600 volt, 40 amp low loss ultrafast igbt three phase

SENSITRON
SEMICONDUCTOR
SPM1006
TECHNICAL DATA
DATASHEET 5384, Rev. B
600 VOLT, 40 AMP LOW LOSS ULTRAFAST IGBT THREE PHASE
BRIDGE MODULE
Features
 Trench stop third generation IGBT
 Soft, fast recovery diode for minimal EMI
 Isolated base plate
 Aluminum nitride substrate
 Light weight low profile standard package
 High temperature engineering plastic shell construction
ELECTRICAL CHARACTERISTICS PER IGBT LEG
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
600
-
-
V
-
-
60
A
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
BVCES
IC = 2 mA, VGE = 0V
O
Continuous Collector Current
TC = 25 C
IC
O
TC = 100 C
30
Pulsed Collector Current, 1ms
ICM
-
-
160
A
Gate to Emitter Voltage
VGE
-
-
+/-20
V
Gate-Emitter Leakage Current , VGE = +/-20V
IGES
-
-
+/- 100
nA
Gate Threshold Voltage, IC = 0.58 mA
V GE(TH)
4.1
-
5.7
V
Zero Gate Voltage Collector Current
ICES
-
-
0.1
mA
o
VCE = 600 V, VGE=0V Ti=25 C
o
VCE = 480 V, VGE=0V Ti=125 C
Collector to Emitter Saturation Voltage
1.5
VCE(SAT)
O
TC = 25 C IC = 20A, VGE = 15V
O
-
1.95
2.30
TC = 125 C IC = 20A, VGE = 15V
2.40
-
V
pF
Input Capacitance
Output Capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cies
Coes
-
2190
112
-
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
O
(Tj = 25 C, IC = 20A, VGE = 15V, VCE = 400 V, RG = 8 )
Turn on Energy Loss
Turn off Energy Loss
td(on)
tr
td(off)
tf
-
24
40
240
26
-
ns
Eon
Eoff
-
1.10
0.58
-
mJ
(Tj = 25 C, IC = 20A, VGE = 15V, VCE = 400 V, RG = 8 )
O
-
-
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 1
SENSITRON
SEMICONDUCTOR
SPM1006
TECHNICAL DATA
DATASHEET 5384, Rev. B
DIODE RATING AND CHARACTERISTICS PER LEG
PARAMETER
SYMBOL
Diode Peak Inverse Voltage
PIV
MIN
TYP
MAX
UNIT
600
-
-
V
IF
-
-
30
15
A
IFSM
-
-
160
A
VF
-
1.70
1.75
2.1
-
V
tRR
-
160
-
ns
Diode Junction-to-Case Thermal Resistance Per Leg
RJC
-
-
2.0
IGBT Junction-to-Case Thermal Resistance Per Leg
RJC
-
-
0.7
Maximum and Storage Junction Temperature
Tjmax
-55
-
150
Isolation to Base Plate
Viso
-
-
2500
O
Continuous Forward Current, TC = 25 C
O
TC = 100 C
Forward Surge Current, tp = 1ms
Diode Forward Voltage,
O
IF = 20A TC = 25 C
O
IF = 20A TC = 125 C
Diode Reverse Recovery Time
O
Tj = 25 C, IF = 20A, VCE = 400 V, di/dt = 100A/µs
PACKAGE CHARACTERISTICS
Schematic Diagram:
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 2
o
C/W
o
C
V
SENSITRON
SEMICONDUCTOR
SPM1006
TECHNICAL DATA
DATASHEET 5384, Rev. B
Mechanical Outline (inches):
SPM1006
Package: EPAK1
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 3
SENSITRON
SEMICONDUCTOR
SPM1006
TECHNICAL DATA
DATASHEET 5384, Rev. B
Note: SPM1006EM units use this legacy package.
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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 4