1200V, 23A Silicon Carbide Power MOSFET

SENSITRON
______
SEMICONDUCTOR
SHD619532
DATASHEET 5313, REV -
1200V, 23A Silicon Carbide Power MOSFET



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
Through-hole hermetic package
Low Rdson over full temperature range
Low switching losses
Very low capacitances
JANTX / JANS screening options available
Maximum Ratings
PARAMETER
SYMBOL
0
Continuous Drain Current
Vgs = 20V, Tc=25 C
VALUE
UNIT
Id
23
12
A
Idpulse
60
A
Vgs
-10, +25
V
Ptot
150
W
0
Tc=100 C
0
Pulsed Drain Current
Tc=25 C
Gate Source Voltage
0
Power Dissipation
Tc=25 C
Operating Junction Temperature *
0
-55 to 150
Tj
C
0
Note: * This is a new product – the max junction temperature is expected to go up to 175 C in future.
MOSFET Characteristics (Tj = 250C unless indicated)
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
ID = 100uA
Gate Threshold Voltage
VGS =VDS, ID = 1mA
Zero Gate Voltage Drain Current
MIN
TYP
MAX
UNIT
V(BR)DSS
1200
-
-
V
VGS(TH)
1.7
2.2
-
V
-
1
10
100
250
µA
-
-
250
nA
100
160
110
220
mΩ
IDSS
0
VGS= 0V, VDS = 1200V, Tj = 25 C
0
VGS= 0V, VDS = 1200V, Tj = 150 C
Gate-Source Leakage Current
VGS = 20V, VDS = 0V
IGSS
On-State Resistance
RDS(ON)
0
VGS =20V, ID = 20A, Tj = 25 C
-
0
VGS =20V, ID = 20A, Tj = 150 C
Transconductance
0
VDS = 20V, IDS = 20A, Tj = 25 C
gfs
-
9.8
8.5
-
S
0
VDS = 20V, IDS = 20A, Tj = 125 C
Input Capacitance
VDD =800V, VGS =0V, f=1MHz
Ciss
-
950
-
pF
Output Capacitance
VDD =800V, VGS =0V, f=1MHz
Coss
-
80
-
pF
Reverse Transfer Capacitance
VDD =800V, VGS =0V, f=1MHz
Crss
-
6.5
-
pF
Internal Gate Resistance
RG
-
4.6
-
Ω
Thermal Resistance, Junction to Case
RTHJC
-
-
1.00
K/W
© 2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]
SENSITRON
______
SEMICONDUCTOR
SHD619532
DATASHEET 5313, REV -
Intrinsic Diode Characteristics (Tj = 250C unless indicated)
PARAMETER
SYMBOL
Forward Voltage
VGS=-5V, IF=10A
MIN
TYP
MAX
UNIT
VSD
-
3.3
-
V
Reverse Recovery Time
VGS=-5V, IF=20A, VR=800V
di/dt=100A/us
tRR
-
40
-
ns
Reverse Recovery Charge
VGS=-5V, IF=20A, VR=800V
di/dt=100A/us
QRR
-
165
-
nC
Peak Reverse Recovery
Current
VGS=-5V, IF=20A, VR=800V
di/dt=100A/us
IRRM
-
6.4
-
A
Mechanical Dimensions (inches/mm):
LCC3P (SMD-1)
1. Drain
2. Source
3. Gate
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
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fail-safe precautions or other arrangement .
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a value exceeding the absolute maximum rating.
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© 2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]