SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - Three-Phase IGBT BRIDGE BRAKE IGBT + INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE AND BRAKE IGBT. NEAR HERMETIC PACKAGE. USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES. 1200 VOLT, 133 AMP INRUSH THYRISTOR (SCR). AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLE CAPABILITY. LOW PROFILE LIGHTWEIGHT PACKAGE. INTERNAL BUSBAR LAYOUT MINIMIZES INDUCTANCE. INTERNAL GATE SOURCE PROTECTION ZENERS THREE PHASE AND BRAKE IGBT SECTION ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 1 SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. 0 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25 C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT BVCES 1200 - - V VGETH 5.2 5.8 6.4 V - - 150 A INVERTER AND BRAKE IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 4mA, VGE = 0V Gate Threshold Voltage IC = 5.3mA, VCE = VGE O Continuous Collector Current TC = 25 C IC O TC = 80 C Zero Gate Voltage Collector Current 95 ICES o - - VCE = 1200V, VGE = 0V Ti = 25 C 1 mA 25 mA 2.4 V 10 μA o VCE = 800V, VGE = 0V Ti = 125 C O Collector to Emitter Saturation Voltage, Tj = 25 C VCE(SAT) - O IC = 150A, VGE = 15V Tj = 125 C Gate to Emitter Leakage Current 1.9 2.2 IGES VCE = 0V, VGE = 15V IGBT Internal Gate Resistance - 5 - Ohm IGBT turn-on switching loss o VCE = 600V, IC = 150A, Tj = 25 C - 5 - mJ IGBT turn-off switching loss o VCE = 600V, IC = 150A, Tj = 25 C - 10 - mJ Short Circuit Withstand Time, Conditions 600V DC link, - 10 - µs RJC - - 0.24 PIV 1200 - - V IF - - 95 A VF - 1.8 2.2 V trr - 220 - A - 7 - mJ - - 0.42 O VGE=15V, ISC = 600A, Tstart < 175 C Junction To Case Thermal Resistance o C/W INVERTER DIODE SPECIFICATIONS Diode Peak Inverse Voltage O Continuous Forward Current, TC = 80 C Diode Forward Voltage O IF = 150A, Tj = 25 C Diode Peak Reverse Recovery Current O IF=150A, VRR=600V, di/dt = 6000 A/s, Tj = 25 C Diode switching loss O IF=150A, VRR=600V, di/dt = 6000 A/s, Tj = 25 C Junction To Case Thermal Resistance RJC ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 2 o C/W SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - INRUSH THYRISTOR (SCR) SPECIFICATIONS Peak Inverse Voltage PIV 1200 - - V IT - - 133 A IFSM - - 2400 A VAK - - 1.8 V IL - - 450 mA IH - - 200 mA IGT - - 150 mA O Continuous Forward Current (IRMS) TC = 80 C O Inrush Current, Tj = 25 C, VR = 0, t = 8.3msec O Forward Voltage, Tj = 25 C, IGT = 150mA, IT = 300A pulse O Latching Current, TC = 25 C O Holding Current, TC = 25 C O Gate Trigger Current, VD = 6V TC = 25 C O TC = - 55 C Junction To Case Thermal Resistance 240 o RJC - - 0.27 C/W PIV 1200 - - V IF - - 63 A VF - - 1.3 V IRM - - 0.05 2 mA RJC - - 0.63 BRAKE DIODE SPECIFICATIONS Diode Peak Inverse Voltage O Continuous Forward Current, TC = 80 C O Diode Forward Voltage, IF = 100A, Tj = 25 C Diode Leakage Current @ 1200V Junction To Case Thermal Resistance O Tj = 25 C O Tj = 125 C o C/W MODULE TOTAL WEIGHT Total Weight W - - 440 gms Operating Junction Temperature Tj -55 - 150 o Storage Ambient Temperature Ts -55 - 150 o Operating Case Temperature Tc -55 - 125 o Operating Ambient Temperature TA -40 - 100 o - - 50000 2500 - MODULE STORAGE AND OPERATING CONDITIONS Operating Altitude C C C C ft. MODULE ISOLATION All pins to baseplate (sea level) - - ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 3 VDC SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - MECHANICAL OUTLINE ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 4 SENSITRON SEMICONDUCTOR SPM1003 TECHNICAL DATA DATASHEET 5279, Rev. - SCHEMATIC All zener diodes are 18V. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 5