SENSITRON SEMICONDUCTOR SCM1001 Technical Data DATASHEET 5284, Rev. B Three-Phase IGBT BRIDGE with BRAKE IGBT Three-Phase Input BRIDGE with INRUSH SCR DESCRIPTION: 1200 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE UPPER & LOWER REGENERATIVE BRAKE IGBT SWITCHES USE OF LATEST 4TH GENERATION IGBT AND DIODE TO MINIMIZE TOTAL LOSSES 1200 VOLT, 25 AMP BRAKE IGBT 1200 VOLT, 133 AMP INRUSH THYRISTOR (SCR) 1200 VOLT, 63A THREE PHASE DIODE BRIDGE RTD TO MONITOR MODULE TEMPERATURE NEAR HERMETIC CONSTRUCTION AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLING CAPABILITY AlN SUBSTRATE FOR HIGH POWER CAPABILITY LOW PROFILE LIGHT WEIGHT PACKAGE WITH BUS BAR ATTACHMENT STANDARD FLYING LEAD I/O WITH OPTIONAL D-SUB CONNECTORS TO WIRE TO CONTROL BOARD W/O INTERFERENCE TO BUS BARS PARTS ARE SERIALIZED HTRB @ 150C, 48 hrs. TEST DATA RECORDED ©2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 1 SENSITRON SEMICONDUCTOR SCM1001 Technical Data DATASHEET 5284, Rev. B THREE PHASE IGBT SECTION 0 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25 C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT BVCES 1200 - - V VGETH 5.2 5.8 6.4 V - - 150 A INVERTER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 4mA, VGE = 0V Gate Threshold Voltage IC = 5.3mA, VCE = VGE O Continuous Collector Current TC = 25 C IC O TC = 80 C Zero Gate Voltage Collector Current 95 ICES o - - VCE = 1200V, VGE = 0V Ti = 25 C 1 mA 25 mA 2.4 V 100 nA o VCE = 800V, VGE = 0V Ti = 125 C O Collector to Emitter Saturation Voltage, Tj = 25 C VCE(SAT) - O IC = 150A, VGE = 15V Tj = 125 C Gate to Emitter Leakage Current (not measurable due to built-in G-E resistor) 1.9 2.2 IGES VCE = 0V, VGE = 20V IGBT Internal Gate Resistance - 5 - Ohm IGBT turn-on switching loss o VCE = 600V, IC = 150A, Tj = 25 C - 5 - mJ IGBT turn-off switching loss o VCE = 600V, IC = 150A, Tj = 25 C - 10 - mJ Short Circuit Withstand Time, Conditions 600V DC link, - 10 - µs RJC - - 0.24 PIV 1200 - - V IF - - 95 A VF - 1.8 2.2 V trr - 220 - A - 7 - mJ - - 0.42 O VGE=15V, ISC = 600A, Tstart < 175 C Junction To Case Thermal Resistance o C/W INVERTER DIODE SPECIFICATIONS Diode Peak Inverse Voltage O Continuous Forward Current, TC = 80 C Diode Forward Voltage O IF = 150A, Tj = 25 C Diode Peak Reverse Recovery Current O IF=150A, VRR=600V, di/dt = 6000 A/s, Tj = 25 C Diode switching loss O IF=150A, VRR=600V, di/dt = 6000 A/s, Tj = 25 C Junction To Case Thermal Resistance RJC ©2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 2 o C/W SENSITRON SEMICONDUCTOR SCM1001 Technical Data DATASHEET 5284, Rev. B BRAKE IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 1200 - - V - - 45 A IC = 1.5mA, VGE = 0V O Continuous Collector Current TC = 25 C IC O TC = 80 C Zero Gate Voltage Collector Current o 25 ICES - - 5.0 mA VCE(SAT) - 1.7 2.2 V A VCE = 1200 V, VGE=0V Ti=25 C O Collector to Emitter Saturation Voltage, Tj = 25 C O IC = 25A, VGE = 15V Tj = 125 C 2.0 Pulsed Collector Current, 0.5ms ICM - - 70 Junction To Case Thermal Resistance RJC - - 0.9 PIV 1200 - - V IF - - 25 A VF - - 1.3 V IRM - - 0.05 mA o C/W BRAKE FREE WHEEL DIODE SPECIFICATIONS Diode Peak Inverse Voltage O Continuous Forward Current, TC = 80 C O Diode Forward Voltage, IF = 12 A, Tj = 25 C Diode Leakage Current @ 1200V O Tj = 25 C O Tj = 125 C Junction To Case Thermal Resistance 0.5 RJC - - 2.0 o C/W INRUSH THYRISTOR (SCR) SPECIFICATIONS Peak Inverse Voltage PIV 1200 - - V IT - - 133 A IFSM - - 2400 A VAK - - 1.8 V IL - - 450 mA IH - - 200 mA IGT - - 150 mA O Continuous Forward Current (IRMS) TC = 80 C O Inrush Current, Tj = 25 C, VR = 0, t = 8.3msec O Forward Voltage, Tj = 25 C, IGT = 150mA, IT = 300A pulse O Latching Current, TC = 25 C O Holding Current, TC = 25 C Gate Trigger Current, VD = 6V O TC = 25 C O TC = - 55 C Junction To Case Thermal Resistance 240 RJC - - 0.27 ©2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 3 o C/W SENSITRON SEMICONDUCTOR SCM1001 Technical Data DATASHEET 5284, Rev. B INPUT RECTIFIER SPECIFICATIONS Diode Peak Inverse Voltage PIV 1200 - - V IF - - 63 A VF - - 1.3 V IRM - - 0.05 2 mA RJC - - 0.63 O Continuous Forward Current, TC = 80 C O Diode Forward Voltage, IF = 100A, Tj = 25 C O Diode Leakage Current @ 1200V Tj = 25 C O Tj = 125 C Junction To Case Thermal Resistance o C/W RTD SPECIFICATIONS (R = 1kΩ at 00C) 0 0 Temperature coefficient (0 C – 100 C) 0 KT Resistance at -55 C (temperature tolerance ±0.58 C) 0 3850 ppm/K 783.19 Ω 1479.51 Ω 0 R-55 0 Resistance at 125 C (temperature tolerance ±0.93 C) R 1 2 MODULE STORAGE AND OPERATING CONDITIONS 5 Operating Junction Temperature Tj -55 - 150 o Storage Ambient Temperature Ts -55 - 150 o Operating Case Temperature Tc -55 - 100 o Operating Ambient Temperature TA -55 - 100 o - - 50000 Ft Operating Altitude C C C C MODULE ISOLATION All pins to baseplate (sea level) - 2500 - - VDC All other pins to RTD (sea level) - 1500 - - VDC All pins to baseplate (sea level), 60Hz - 1500 - - VAC - - 600 grams MODULE TOTAL WEIGHT Total Weight ©2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 4 SENSITRON SEMICONDUCTOR SCM1001 Technical Data DATASHEET 5284, Rev. B MECHANICAL OUTLINE 5.99 [152.24] 4.88 [124.00] 45 DEGREE CHAMFER (2X) 0.44 [11.18] Ø0.200 [Ø5.080] (4X) 1.16 [29.58] TYP. (4X) A/R (2X) 2.96 [75.18] 14 41 4 1 5 27 9 10 13 28 R0.23 [R5.84] 2.24 [57.00] 0.44 [11.18] 0.54 [13.59] 1.16 [29.58] 1.18 [29.99] 1.18 [29.99] (13X) 10-32 UNF X .250" [7.92] DEEP MAX. FROM TOPS OF TERMINALS. EXTERNAL TERMINAL FINISH - NICKEL ENGLISH [METRIC] MARKING AREA 0.20 [5.00] 0.13 [3.25] MAX. DEPTH OF SCREW UNDER NUT 0.45 [11.35] 1.097±0.020 [27.864±0.508] TOLERANCES UNLESS OTHERWISE NOTED WITH THERMAL PAD 1.102+/-.020 [27.99 +/.508] .XX= +/- .020 [.50] .XXX= +/- .010 [.254] RECOMMEND TORQUE VALUE : 25 IN-LBS. Recommended Thermal Pad Material is Laird Technologies Tgon 805 (to be ordered separately) ©2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 5 SENSITRON SEMICONDUCTOR SCM1001 Technical Data DATASHEET 5284, Rev. B SCHEMATIC 0 Wire Details (all AWG #24, 200 C, 1000V insulated): Circuit Function Wire Circuit Ref Color Ref 14 Inrush SCR Gate Violet 28 15 Inrush SCR Cathode Brown 29 16 N/C 30 17 N/C 31 18 RTD Red 32 19 RTD Orange 33 20 Top Brake IGBT Gate Red 34 21 Top Brake IGBT Cathode Orange 35 22 Bottom Brake IGBT Gate Yellow 36 23 Bottom Brake IGBT Cathode Green 37 24 N/C 38 25 N/C 39 26 N/C 40 27 N/C 41 Function Phase C Bottom Emitter Phase C Bottom Gate Phase C Top Emitter Phase C Top Gate Phase B Bottom Emitter Phase B Bottom Gate Phase B Top Emitter Phase B Top Gate Phase A Top Emitter Phase A Top Gate Phase A Bottom Emitter Phase A Bottom Gate N/C N/C Wire Color Black Brown Red Orange Black Yellow Green Blue Violet Gray Black White DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2015 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 6