GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy RoHS COMPLIANT • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Speed 8 to 60 kHz ECONO2 4PACK • Designed and qualified for industrial market BENEFITS • Benchmark efficiency for SMPS appreciation in particular HF welding PRODUCT SUMMARY VCES 1200 V IC at TC = 66 °C 50 A VCE(on) (typical) 3.49 V • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage TEST CONDITIONS VCES Continuous collector current IC MAX. UNITS 1200 V TC = 25 °C 66 TC = 80 °C 44 Pulsed collector current See fig. C.T.5 ICM 150 Clamped inductive load current ILM 150 Diode continuous forward current IF TC = 25 °C 40 TC = 80 °C 25 Diode maximum forward current IFM 150 Gate to emitter voltage VGE ± 20 Maximum power dissipation (IGBT) PD Maximum operating junction temperature TJ 150 TStg - 40 to + 125 VISOL AC 2500 (MIN) Storage temperature range Isolation voltage Document Number: 93653 Revision: 01-Sep-08 TC = 25 °C 330 TC = 80 °C 180 For technical questions, contact: [email protected] A V W °C V www.vishay.com 1 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage BV(CES) Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) Threshold voltage temperature coefficient Zero gate voltage collector current Diode forward voltage drop Gate to emitter leakage current ΔVGE(th)/ΔTJ ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 500 µA 1200 - - IC = 50 A, VGE = 15 V - 3.49 3.9 IC = 75 A, VGE = 15 V - 4.15 4.5 IC = 50 A, VGE = 15 V, TJ = 125 °C - 4.16 4.5 IC = 75 A, VGE = 15 V, TJ = 125 °C - 4.97 5.4 VCE = VGE, IC = 250 µA UNITS V 4.0 4.9 6.0 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - VGE = 0 V, VCE = 1200 V - 11 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 600 1000 IF = 50 A - 3.30 4.5 IF = 75 A - 3.90 5.0 IF = 50 A, TJ = 125 °C - 3.6 4.8 IF = 75 A, TJ = 125 °C - 4.37 5.5 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS mV/°C µA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) QG IC = 50 A - 400 - Gate to emitter charge (turn-on) QGE VCC = 600 V - 43 - Gate to collector charge (turn-on) QGC VGE = 15 V - 187 - Turn-on switching loss Eon IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 Ω, L = 500 µH TJ = 25 °C (1) - 0.93 - - 1.20 - - 2.13 - IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 Ω, L = 500 µH TJ = 125 °C (1) - 1.68 - - 1.77 - - 3.46 - - 128 - IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 Ω, L = 500 µH TJ = 125 °C - 56 - - 292 - - 134 - Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 150 A RG = 10 Ω, VGE = 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, VP = 1200 V RG = 10 Ω, VGE = 15 V to 0 V Diode peak reverse recovery current Irr Diode reverse recovery time trr Total reverse recovery charge Qrr - - TJ = 25 °C - 1.3 2.3 TJ = 125 °C - 2.0 3 - 0.453 0.49 - 0.74 0.82 TJ = 25 °C - 0.12 0.3 TJ = 125 °C - 0.4 1.5 TJ = 125 °C VCC = 600 V IF = 50 A dI/dt = 7 A/µs mJ ns Fullsquare 10 TJ = 25 °C nC µs A µs µC Note (1) Energy losses include “tail” and diode reverse recovery www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 93653 Revision: 01-Sep-08 GB50YF120N IGBT Fourpack Module, 50 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface MIN. TYP. MAX. UNITS RthJC (IGBT) - - 0.38 RthJC (DIODE) - - 1.00 RthCS (MODULE) - 0.05 - 2.7 - 3.3 Nm - 170 - g Mounting torque (M5) Weight °C/W 1000 160 140 100 120 10 IC (A) IC (A) 100 80 1 60 40 0.1 20 0 0 10 20 30 40 50 60 0.01 70 1 10 100 1000 TC (°C) VCE (V) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 3 - Forward SOA TC = 25 °C; TJ ≤ 150 °C 350 10000 1000 300 250 PD (W) PD (W) 100 200 150 10 100 50 0 1 0 20 40 60 80 100 120 140 160 10 100 10000 TC (°C) TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature Document Number: 93653 Revision: 01-Sep-08 1000 Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V For technical questions, contact: [email protected] www.vishay.com 3 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A 160 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 VCE (V) 100 ICE (A) 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 6 7 7 9 11 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 VCE (V) 100 ICE (A) 19 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 120 17 Fig. 8 - Typical VCE vs. VGE TJ = 25 °C Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 µs 140 15 VGE (V) VCE (V) 160 13 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 6 7 8 7 9 11 13 15 17 VCE (V) VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 µs Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 19 300 160 140 120 TJ = 25°C TJ = 125°C 250 25°C 125°C 200 ICE (A) IF (A) 100 80 60 150 100 40 50 20 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 4 6 VF (V) 10 12 14 VGE (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 µs www.vishay.com 4 8 Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 µs For technical questions, contact: [email protected] Document Number: 93653 Revision: 01-Sep-08 GB50YF120N IGBT Fourpack Module, 50 A Vishay High Power Products 1 1 tdOFF Switching Time (µs) TJ = 125°C ICES (mA) 0.1 0.01 tF tdON 0.1 tR TJ = 25°C 0.001 0.01 400 600 800 1000 1200 0 20 40 VCES (V) 60 80 100 IC (A) Fig. 11 - Typical Zero Gate Voltage Collector Current Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 200 µH; VCE = 600 V, RG = 5 Ω; VGE = 15 V 5.5 12 TJ = 25°C 5 10 4.5 125°C IRR (A) Vgeth (V) 8 4 3.5 6 TJ = 125°C 4 25°C 3 2 2.5 2 0 0 0.2 0.4 0.6 0.8 0 1 40 60 80 100 IC (mA) dIF/ dt (A/µs) Fig. 12 - Typical Threshold Voltage Fig. 15 - Typical Diode IREC vs. dIF/dt VCC = 600 V; IF = 50 A 4.5 800 4 700 EON 3.5 600 3 2.5 tRR (ns) Energy (mJ) 20 EOFF 500 125°C 400 2 300 1.5 200 1 100 25°C 0.5 0 20 40 60 80 100 0 0 20 IC (A) 60 80 100 dIF/ dt (A/µs) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 200 µH; VCE = 600 V, RG= 5 Ω; VGE = 15 V Document Number: 93653 Revision: 01-Sep-08 40 Fig. 16 - Typical Diode trr vs. dIF/dt VCC = 600 V; IF = 50 A For technical questions, contact: [email protected] www.vishay.com 5 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A 16 1600 14 125°C 1200 12 1000 10 VGE (V) QRR (nC) 1400 800 typical value 8 6 600 4 400 25°C 2 200 0 0 0 20 40 60 80 100 0 100 200 300 400 500 dIF/ dt (A/µs) QG, Total Gate Charge (nC) Fig. 17 - Typical Diode Qrr vs. dIF/dt VCC = 600 V; IF = 50 A Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 µH 1 Thermal Response (ZthJC ) D = 0.50 0.20 0.1 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 10 Thermal Response (ZthJC ) D = 0.50 0.20 1 0.10 0.1 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0.01 0.001 1E-006 1E-005 0.0001 0.001 t1, Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE) www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93653 Revision: 01-Sep-08 GB50YF120N IGBT Fourpack Module, 50 A Vishay High Power Products Driver L D.U.T. 0 + VCC - D + C - 1K 900 V D.U.T. Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Fig. C.T.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. C.T.2 - RBSOA Circuit Fig. C.T.4 - Switching Loss Circuit R= D.U.T. VCC ICM + VCC Rg Fig. C.T.5 - Resistive Load Circuit Document Number: 93653 Revision: 01-Sep-08 For technical questions, contact: [email protected] www.vishay.com 7 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A ORDERING INFORMATION TABLE Device code G B 50 Y F 120 N 1 2 3 4 5 6 7 1 - Insulated gate bipolar transistor (IGBT) 2 - B = IGBT Generation 5 NPT 3 - Current rating (50 = 50 A) 4 - Circuit configuration (Y = Fourpack) 5 - Package indicator (F = ECONO2) 6 - Voltage rating (120 = 1200 V) 7 - Speed/type (N = Ultrafast with reduced diode, speed 8 to 60 kHz) CIRCUIT CONFIGURATION 21, 22 48, 49 40 28 41 29 15, 16, 17 5, 6, 7 36 32 37 33 23, 24 46, 47 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95252 For technical questions, contact: [email protected] Document Number: 93653 Revision: 01-Sep-08 Outline Dimensions Vishay Semiconductors ECONO2 4PAK DIMENSIONS in millimeters (inches) Z Y 20.5 13.2 ± 0.15 1.25 0.8 - 0.02 - 0.06 105 ± 0.1 34.29 30.48 34.29 30.48 26.67 22.86 22.86 19.05 19.05 11.43 11.43 7.62 7.62 X 2:1 0.8 ± 0.03 3.81 21 ± 0.03 21 22 49 48 2 4 5 6 7 8 10 12 15 16 17 19 7.62 7.62 47 46 10.5 5.5 ± 0.05 11.43 11.43 33 32 30 29282726 42 ± 0.15 38 373635 21 ± 0.03 4140 23 24 4443 45.4 ± 0.2 + 1.0 - 0.5 7.62 7.62 11.43 15.24 19.05 22.86 30.48 39.49 19.05 22.86 26.67 34.29 39.49 7.5 0 -03 93 ± 0.15 107.8 ± 0.2 Detail R3 Z 2:1 Y 2:1 1 0.5 10.5 0.6 0.8 ± 0.03 83 Document Number: 95252 Revision: 29-Nov-07 0.85 1.25 - 0.02 - 0.06 0 - 0.2 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1