HERMETIC RAD HARD POWER MOSFET

SENSITRON
SEMICONDUCTOR
SRADM1005
TECHNICAL DATA
DATA SHEET 5403, REV. -
HERMETIC RAD HARD POWER MOSFET
FEATURES:
 Low RDS(on)
 Single Event Effect (SEE) hardened,
o LET 85, Range: 118μm
 VGS = -10V, VDS = 250V
 VGS = -15V, VDS = 120V
o LET 55, Range: 90μm
 VGS = -15V, VDS = 250V
 VGS = -20V, VDS = 160V
 Total Ionization Dose (TID) hardened, 100kRad
 Surface mount SMD-0.5 package
 Near equivalent to IRHNJ67234
MAXIMUM RATINGS
ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
RATING
DRAIN TO SOURCE VOLTAGE
GATE TO SOURCE VOLTAGE
0
ON-STATE DRAIN CURRENT (Tc = 25 C)
0
ON-STATE DRAIN CURRENT (Tc = 100 C)
PULSED DRAIN CURRENT (LIMITED BY TJMAX)
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
SINGLE PULSE AVALANCHE (LIMITED BY TJMAX)
SYMBOL
VDS
VGS
ID
ID
IDM
TOP/TSTG
PD
RthJC
EAS
MIN.
-55
-
TYP.
60
MAX.
250
20
12.4
8
50
+150
75
1.66
-
UNITS
Volts
Volts
Amps
Amps
Amps
C
Watts
C/W
mJ
CHARACTERISTIC
DRAIN SOURCE BREAKDOWN
VGS = 0V, ID = 250A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 8A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 1mA
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 200V, VGS = 0V
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
VDD = 0.5VDS,
RISE TIME
ID = 8A,
TURN OFF DELAY TIME
RG = 4.7
FALL TIME
SYMBOL
BVDSS
RDS(ON)
MIN.
250
-
TYP.
-
MAX.
0.13
UNITS
Volts

VGS(th)
2.0
-
4.0
Volts
IDSS
IGSS
-
25
100
-100
25
25
35
20
A
nA
td(ON)
tr
td(OFF)
tf
-
DIODE FORWARD VOLTAGE
IS =12.4A
REVERSE RECOVERY TIME
If = 12.4A, di/dt = 100A/µs
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 100 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
TOTAL GATE CHARGE
VDD =0.5VDS, ID = 12.4A, VGS = 10V
VSD
trr
-
-
1.2
400
Ciss
Coss
Crss
QG
-
1600
120
3
-
42
ELECTRICAL CHARACTERISTICS
2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]
nsec
Volts
nsec
pF
nC
SENSITRON
SEMICONDUCTOR
SRADM1005
TECHNICAL DATA
DATA SHEET 5403, REV. -
MECHANICAL DIMENSIONS: in Inches / mm
DEVICE TYPE
N-CHANNEL MOSFET
SMD-0.5 PACKAGE
PIN-1
DRAIN
PIN-2
GATE
PIN-3
SOURCE
**NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 130, and may not be exported without the appropriate U.S. Department of State authorization.
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characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of
the datasheet(s).
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medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
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use at a value exceeding the absolute maximum rating.
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2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681
PHONE (631) 586-7600  FAX (631) 242-9798  www.sensitron.com  [email protected]