SENSITRON SEMICONDUCTOR SRADM1003 TECHNICAL DATA DATA SHEET 5398, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES: Low RDS(on) Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V Total Ionization Dose (TID) hardened, 100kRad TO-254 package Near equivalent to IRHMS67260 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING DRAIN TO SOURCE VOLTAGE GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT PULSED DRAIN CURRENT (LIMITED BY TJMAX) OPERATING AND STORAGE TEMPERATURE TOTAL DEVICE DISSIPATION THERMAL RESISTANCE, JUNCTION TO CASE SINGLE PULSE AVALANCHE (LIMITED BY TJMAX) SYMBOL VDS VGS ID IDM TOP/TSTG PD RthJC EAS MIN. -55 - TYP. 380 MAX. 250 20 54 214 +150 208 0.6 - UNITS Volts Volts Amps Amps C Watts C/W mJ CHARACTERISTIC DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 250A STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 34A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 1mA ZERO GATE VOLTAGE DRAIN CURRENT VDS = 200V, VGS = 0V GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TRANSCONDUCTANCE VDS = 20V, IDS = 34A TURN ON DELAY TIME VDD = 0.5VDS, RISE TIME ID = 34A, TURN OFF DELAY TIME RG = 4.7 FALL TIME SYMBOL BVDSS MIN. 250 TYP. - MAX. - UNITS Volts RDS(ON) - - 0.03 VGS(th) 2.0 - 4.0 Volts IDSS IGSS 22 - 25 100 -100 80 80 130 80 A nA td(ON) tr td(OFF) tf - DIODE FORWARD VOLTAGE IS =54A REVERSE RECOVERY TIME If = 50A, di/dt = 100A/µs INPUT CAPACITANCE VGS = 0 V OUTPUT CAPACITANCE VDS = 100 V REVERSE TRANSFER CAPACITANCE f = 1.0MHz GATE RESISTANCE TOTAL GATE CHARGE VDD =0.5VDS, ID = 54A, VGS = 10V VSD trr - - 1.2 700 Ciss Coss Crss RG QG - 11100 696 11 0.9 - - ELECTRICAL CHARACTERISTICS - S nsec Volts nsec pF 180 nC **NOTE: This product is subject to the International Traffic in Arms Regulations (ITAR), 22 C.F.R. Parts 120 - 130, and may not be exported without the appropriate U.S. Department of State authorization. ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SENSITRON SEMICONDUCTOR SRADM1003 TECHNICAL DATA DATA SHEET 5398, REV. - MECHANICAL DIMENSIONS TO-254 .149 (3.78 Dia. .139 3.53) 1 .045 (1.14 .035 0.89) 3 Places (6.60 6.32) (1.27 1.02) .800 (20.32 .790 20.07) .545 (13.84 .535 13.58) .685 (17.40 .665 16.89) 1.235 (31.37 1.195 30.35) .260 .249 .050 .040 .545 (13.84 .535 13.60) 2 3 .150(3.81) BSC .150(3.81) BSC 2 Places PINOUT TABLE TYPE N-CHANNEL MOSFET PIN 1 DRAIN PIN 2 SOURCE PIN 3 GATE DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]