SENSITRON 2N7224

SENSITRON
SEMICONDUCTOR
2N7224
TECHNICAL DATA
DATA SHEET 161, REV (see also data sheet 766)
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.07 Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Simple Drive Requirements
œ Repetitive Avalanche Rating
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.
VGS=10V, TC = 25•C
VGS=10V, TC = 100•C
PULSED DRAIN CURRENT
@ TC = 25•C
OPERATING AND STORAGE TEMPERATURE
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25•C
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 21A
VGS = 10V, ID = 34A
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 250mA
FORWARD TRANSCONDUCTANCE
VDS ˜ 15V, IDS = 21A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating
VGS = 0V, TJ = 125•C
GATE TO SOURCE LEAKAGE FORWARD
@ RATED
GATE TO SOURCE LEAKAGE REVERSE
VGS
TOTAL GATE CHARGE
VGS = 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED VDS
GATE TO DRAIN CHARGE
RATED ID
TURN ON DELAY TIME
VDD = 50V
RISE TIME
RATED ID
TURN OFF DELAY TIME
RG = 2.35W
FALL TIME
DIODE FORWARD VOLTAGE
TJ = 25•C, IS = 34A,
VGS = 0V
DIODE REVERSE RECOVERY TIME
TJ = 25•C
REVERSE RECOVERY CHARGE
If = RATED ID
di/dt = 100A/sec
INPUT CAPACITANCE
VGS = 0 VOLTS
OUTPUT CAPACITANCE
VDS = 25 VOLTS
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
221 WEST INDUSTRY COURT
SYMBOL
VGS
ID
MIN.
-
TYP.
-
UNITS
Volts
Amps
-
MAX.
–20
34
21
136
150
0.83
150
IDM
TOP/TSTG
R JC
PD
-55
-
BVDSS
100
-
-
Volts
-
-
2.0
9.0
-
-
-
IGSS
-
-
Qg
Qgs
Qgd
td(ON)
tr
td(ON)
tf
VSD
50
8
15
-
-
-
-
trr
Qrr
-
Ciss
Coss
Crss
-
RDS(ON)
VGS(th)
gfs
IDSS
DEER PARK, NY 11729-4681
0.07
0.081
4.0
25
250
Amps
•C
•C/W
Watts
W
Volts
S(1/W)
mA
100
-100
125
22
65
35
190
170
130
1.8
Volts
-
500
2.9
nsec
mC
3700
1100
200
-
pF
-
PHONE (631) 586-7600
FAX (631) 242-9798
nA
nC
nsec
2N7224
SENSITRON
DATA SHEET 161
REVISION -
MECHANICAL DIMENSIONS: in Inches / mm
.149 (3.78
Dia.
.139 3.53)
.545 (13.84
.535 13.60)
.045 (1.14
.035 0.89)
3 Places
(6.60
6.32)
(1.27
1.02)
.800 (20.32
.790 20.07) .545 (13.84
.535 13.58)
.685 (17.40
.665 16.89)
1.235 (31.37
1.195 30.35)
.260
.249
.050
.040
1 2 3
.150(3.81) BSC
2 Places
.150(3.81) BSC
TO-254
PINOUT TABLE
DEVICE TYPE
MOSFET
TO-254 PACKAGE
221 WEST INDUSTRY COURT
PIN 1
DRAIN
DEER PARK, NY 11729-4681
PIN 2
SOURCE
PHONE (631) 586-7600
PIN 3
GATE
FAX (631) 242-9798
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
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Sensitron Semiconductor.
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