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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) The 2SK2857 is a switching device which can be driven directly 4.5±0.1 by a 5V power source. The 2SK2857 features a low on-state resistance and excellent 1.5±0.1 FEATURES • Can be driven by a 5V power source. 1 0.42 ±0.06 • Low On-state resistance : 2 2.5±0.1 0.8MIN. actuator driver. 3 4.0±0.25 1.6±0.2 Switching Characteristics, and is suitable for applications such as Electrode Connection 1.Souce 2.Drain 3.Gate 0.42±0.06 0.47 ±0.06 1.5 3.0 0.41+0.03 -0.05 RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A) Marking : NX RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±4 A ID(pulse) ±16 A Drain Current (pulse) Note1 Total Power Dissipation Note2 PT 2 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C EQUIVALENT CIRCUIT Drain Internal Diode Gate Gate Protection Diode Source Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic board of 16 cm × 0.7 mm 2 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11648EJ2V0DS00 (2nd edition) Date Published March 1999 NS CP (K) Printed in Japan The mark • shows major revised points. © 1998,1999 2SK2857 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.0 V Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance 1.0 1.4 | yfs | VDS = 10 V, ID = 2 A 1 S RDS(on)1 VGS = 4 V, ID = 1.5 A 150 220 mΩ RDS(on)2 VGS = 10 V, ID = 2.5 A 110 150 mΩ Input Capacitance Ciss VDS = 10 V 265 pF Output Capacitance Coss VGS = 0 V 125 pF Reverse Transfer Capacitance Crss f = 1 MHz 56 pF Turn-on Delay Time td(on) VDD = 25 V, ID = 1 A 8 ns VGS(on) = 10 V, RG = 10 Ω 11 ns RL = 25 Ω 52 ns 22 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDS = 48 V 10.6 nC Gate to Source Charge QGS VGS = 10 V 0.7 nC Gate to Drain Charge QGD ID = 4 A 3.5 nC Diode Forward Voltage VF(S-D) IF = 4 A, VGS = 0 V 0.86 V Reverse Recovery Time trr IF = 4 A, VGS = 0 V 49 ns Reverse Recovery Charge Qrr di/dt = 50 A /µs 26.6 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS V GS Wave Form 0 PG. 90 % 90 % ID VGS 0 I D Wave Form τ τ = 1µ s Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton RL 50 Ω VDD 90 % VDD ID 2 VGS(on) 10 % IG = 2 mA td(off) tf toff Data Sheet D11648EJ2V0DS00 2SK2857 TYPICAL CHARACTERISTICS (TA = 25°C) • DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 10 n) (o DS 30 60 120 90 TA - Ambient Temperature - ˚C 10 R m s =1 m s 10 0m s TA = 25˚C Single Pulse Mounted on Ceramic 2 Board of 16cm x 0.7mm DC 10 1 100 TRANSFER CHARACTERISTICS 20 VDS = 10 V 10 6V ID - Drain Current - A ID - Drain Current - A PW VDS - Drain to Source Voltage - V 2.0 1.6 V) V (@ 0.1 150 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8V d ite Lim 0 =1 1 20 0 S G 4V 1.2 0.8 1 TA = 125˚C 75˚C 25˚C −25˚C 0.1 0.4 VGS = 2 V 0 0.4 0.8 1.2 1.6 0.01 2.0 4 2 3 VGS - Gate to Sorce Voltage - V 1 FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 20 | yfs | - Forward Transfer Admittance - S VDS = 10 V 10 TA = −25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 0.1 1 ID - Drain Current - A 10 20 RDS(on) - Drain to Source On-state Resistance - mΩ VDS - Drain to Source Voltage - V 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 240 VGS = 4 V 200 TA = 125˚C 160 75˚C 120 25˚C −25˚C 80 40 0 0.1 Data Sheet D11648EJ2V0DS00 1 ID - Drain Current - A 10 20 3 240 200 TA = 125˚C 160 75˚C 120 25˚C −25˚C 80 40 0 0.1 1000 Ciss, Coss, Crss - Capacitance - pF VGS = 10 V 1 ID - Drain Current - A 10 20 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 800 600 400 200 ID = 2.5 A 1.5 A 0 2 6 4 8 10 12 14 16 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS f = 1 MHz 1000 td(on), tr, td(off), tf - Swwitchig Time - ns RDS(on) - Drain to Source On-State Resistance - mΩ 2SK2857 Ciss 100 Coss Crss 10 1 10 tr 100 td(off) tf td(on) 10 0.1 0.1 100 1 VDS - Drain Source Voltage - V 10 ID - Drain Current - A 20 10 1 0.1 0.6 4 VDS - Drain to Source Voltage - V IF - Source to Drain Current - A VGS = 0 V 0.8 1.0 1.2 1.4 1.6 1.8 VF(S-D) - Source to Drain Voltage - V 2.0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 60 ID = 4 A VGS 50 10 VDD = 12 V 30 V 40 8 48 V 30 VDS 6 20 4 10 2 0 2 4 6 8 Qg - Gate Charge - nC Data Sheet D11648EJ2V0DS00 10 0 12 VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 2SK2857 [MEMO] Data Sheet D11648EJ2V0DS00 5 2SK2857 [MEMO] 6 Data Sheet D11648EJ2V0DS00 2SK2857 [MEMO] Data Sheet D11648EJ2V0DS00 7 2SK2857 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8