To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 4.5 ± 0.1 an IC operating at 5 V. 1.5 ± 0.1 1.6 ± 0.2 0.8 MIN. motors and DC/DC converters. FEATURES D S 0.42 ±0.06 • Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A G 2.5 ± 0.1 characteristics and is ideal for driving the actuators, such as 4.0 ± 0.25 This product has a low ON resistance and superb switching 0.42 0.47 ±0.06 1.5 ±0.06 3.0 0.41+0.03 –0.05 EQUIVALENT CIRCUIT • High switching speed ton + toff < 100 ns Drain (D) • Low parasitic capacitance Gate (G) Internal diode Gate protection diode PIN CONNECTIONS S: Source D: Drain G: Gate Source (S) Marking: NU ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 60 V Gate to Source Voltage VGSS VDS = 0 ±20 V Drain Current (DC) ID(DC) ±1.0 A Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % ±2.0 A Total Power Dissipation PT 16 cm2 × 0.7 mm, ceramic substrate used 2.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. D11231EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 1996 2SK2111 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-Off Current IDSS VDS = 60 V, VGS = 0 1.0 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10 µA Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 2.0 V Forward Transfer Admittance |yfs| VDS = 10 V, ID = 0.5 A 0.4 Drain to Source On-State Resistance RDS(on)1 VGS = 4.0 V, ID =0.5 A 0.32 0.6 Ω Drain to Source On-State Resistance RDS(on)2 VGS = 10 V, ID = 0.5 A 0.24 0.45 Ω Input Capacitance Ciss VDS = 10 V, VGS = 0, 170 pF Output Capacitance Coss f = 1.0 MHz 87 pF Reverse Transfer Capacitance Crss 32 pF Turn-On Delay Time td(on) VDD = 25 V, ID = 0.5 A 2.8 ns tr VGS(on) = 10 V, RG = 10 Ω 2.3 ns Turn-Off Delay Time td(off) RL = 50 Ω 55 ns Fall Time tf 27 ns Rise Time 2 SYMBOL 1.4 S 2SK2111 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 10 5 ID - Drain Current - A dT - Derating Factor - % 80 60 40 20 1 2 10 0 1 PW 0.5 m s m s =1 00 DC ms 0.2 Single pulse 0 30 60 90 120 0.1 150 1 TA - Ambient Temperature - ˚C 50 100 1 10 V VDS = 10 V 2.5 V 0.8 0.6 ID - Drain Current - A 4.5 V 4.0 V 3.5 V 3.0 V VGS = 2.0 V 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 TA = 75 ˚C 25 ˚C –25 ˚C 0.01 0.001 0.0001 0.5 1 1.5 2 2.5 3 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VDS = 10 V 1 TA = –25 ˚C 25 ˚C 75 ˚C 0.1 0.01 0.001 0.1 0.01 0.1 ID - Drain Current - A 1 RDS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - A 20 10 TRANSFER CHARACTERISTICS 1.0 |yfs| - Forward Transfer Admittance - S 5 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 2 10 VGS = 4 V 0.5 TA = 75 ˚C 25 ˚C –25 ˚C 0 0.01 0.1 1 10 ID - Drain Current - A 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 VGS = 10 V 0.5 TA = 75 ˚C 25 ˚C –25 ˚C 0 0.01 0.1 1 10 RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω 2SK2111 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 0.5 0 ID - Drain Current - A 100 Coss 50 Crss 20 10 0.1 0.2 0.5 1 2 5 10 20 50 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - A 1 0.1 0.01 0.001 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD - Source to Drain Voltage - V 4 20 td(off) 50 tf 20 tr 10 5 td(on) 2 1 0.05 0.1 0.2 0.5 VDD = 25 V VGS(on) = 10 V 1 5 2 ID - Drain Current - A VDS - Drain to Source Voltage - V 0.0001 0.2 15 100 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF Ciss 10 SWITCHING CHARACTERISTICS VGS = 0 f = 1 MHz 200 5 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 500 ID = 0.5 A 1 2SK2111 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SK2111 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11