NNCD5.6LG to NNCD6.8LG DS

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
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“Standard”:
8.
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
ESD NOISE CLIPPING DIODES
NNCD5.6LG to NNCD6.8LG
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN MINI MOLD
PACKAGE DIMENSIONS
This product series is a low capacitance type diode developed
(in millimeters)
for ESD (Electrostatic Discharge) absorption. Based on the
2.8 ± 0.2
1.5
IEC1000-4-2 test on electromagnetic interference (EMI), the
diode assures an endurance of no less than 8 kV, and capacitance
+0.1
0.65 –0.15
2
5
+0.1
With four elements mounted in the 5Pin Mini Mold Package,
that product can cope with high density assembling.
1
0.32 –0.06
2.9 ± 0.2
communication bus such as USB.
0.95
the most suitable for the ESD absorption in the high-speed data
0.95
is small with 10 pF between the terminal. This product series is
3
4
FEATURES
• Capacitance is small with 10 pF (at VR = 0 V, f = 1 MHz)
It is excellent in the frequency
+0.1
0 to 0.1
between the terminal.
0.16 –0.06
4-2), the product assures the minimum endurance of 8 kV.
0.8
1.1 to 1.4
• Based on the electrostatic discharge immunity test (IEC1000-
characteristic.
• With 4 elements mounted (common anode) in the 5-pin mini
(5-pin mini mold)
mold package, that product can cope with high density
assembling.
PIN CONNECTION
APPLICATIONS
• External interface circuit ESD absorption in the high-speed
5
4
data communication bus such as USB.
1
2
3
1:
2:
3:
4:
5:
K1
A
K2
K3
K4
Cathode 1
Anode (Common)
Cathode 2
Cathode3
Cathode4
MAXIMUM RATINGS (T A = 25°C)
Power Dissipation
P
200 mW
(Total)
Surge Reverse Power
PRSM
2W (t = 10 µs, 1 pulse)
Fig.5
Junction Temperature
Tj
150°C
Storage Temperature
Tstg
–55°C to +150°C
Document No. D12785EJ1V0DS00 (1st edition)
Date Published October 1998 N CP(K)
Printed in Japan
©
1998
NNCD5.6LG to NNCD6.8LG
ELECTRICAL CHARACTERISTICS (T A = 25 °C) (A-K1, A-K2, A-K3, A-K4)
Breakdown VoltageNote 1
Type No
VBR (V)
DynamicNote 2
Reverse
Impedance
Zz (Ω)
Leakage
IR (µA)
Capacitance
ESD VoltageNote 3
Ct (pF)
(kV)
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
TYP.
Test Condition
MIN.
Test Condition
NNCD5.6LG
5.3
6.3
5
80
5
5
2.5
10
8
NNCD6.2LG
5.7
6.7
5
50
5
2
3.0
8
VR = 0 V
f = 1 MHz
NNCD6.8LG
6.2
7.1
5
30
5
2
3.5
7
C = 150 pF
R = 330 Ω
Contact
discharge
8
8
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT given a small A.C. signal.
3. ESD voltage is measured based on the IEC1000-4-2 test on electromagnetic interference (EMI).
2
NNCD5.6LG to NNCD6.8LG
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure 1. P - TA RATING
Figure 2. It - VBR CHARACTERISTICS
250
NNCD5.6LG NNCD6.2LG NNCD6.8LG
200
10 m
100
50
0
100
125
25
50
75
TA - Ambient Temperature - °C
0
150
IT - On state Current - A
150
1m
100
10
1
100 n
10 n
4
5
7
6
8
VBR - Breakdown Voltage - V
Figure 3. Ct - VR CHARACTERISTICS
10.0
Ct - Capacitance between the terminal - pF
P - Power Dissipation - mW
(A - K1, A - K2, A - K3, A - K4)
f = 1 MHz
8.0
NNCD5.6LG
6.0
NNCD6.2LG
NNCD6.8LG
4.0
0.1
1.0
10
VR - Reverse Voltage - V
3
NNCD5.6LG to NNCD6.8LG
Figure 4. TRANSIENT THERMAL IMPEDANCE
1000
Zth - Transient Thermal Impedance - (°C/W)
625°C/W
NNCD [ ] LG
100
10
1
0.1
1m
10 m
100 m
1
10
100
t - Time - s
Figure 5. SURGE REVERSE POWER RATING
1000
PRSM - Surge Reverse Power - W
PRSM
TA = 25°C
Nom - Repetive
10
NNCD [ ] LG
1
0.1
1µ
10 µ
100 µ
1m
tT - Pulse Width - s
4
tT
100
10 m
100 m
NNCD5.6LG to NNCD6.8LG
REFERENCE
Document
Document No.
NEC semiconductor device reliability/quality control system
C11745E
NEC semiconductor device reliability/quality control system
MEI - 1201
Quality grade on NEC semiconductor device
C11531E
Semiconductor device mounting technology manual
C10535E
5
NNCD5.6LG to NNCD6.8LG
[MEMO]
6
NNCD5.6LG to NNCD6.8LG
[MEMO]
7
NNCD5.6LG to NNCD6.8LG
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5