To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The µPA672T is a super-mini-mold device provided PACKAGE DIMENSIONS (in millimeters) with two MOS FET elements. It achieves high-density +0.1 0.2 –0 mounting and saves mounting costs. +0.1 0.15 –0.05 SC-70 • Automatic mounting supported 2.1 ±0.1 • Two MOS FET circuits in package the same size as 1.25 ±0.1 FEATURES 6 5 4 1 2 3 0 to 0.1 0.65 0.7 0.65 1.3 2.0 ±0.2 0.9 ±0.1 PIN CONNECTION 6 1 5 2 4 3 1. Source 1 (S1) 2. Gate 1 (G1) 3. Drain 2 (D2) 4. Source 2 (S2) 5. Gate 2 (G2) 6. Drain 1 (D1) Marking: MA ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Drain to Source Voltage VDSS 50 V Gate to Source Voltage VGSS ±7.0 V Drain Current (DC) ID(DC) 100 mA Drain Current (pulse) ID(pulse) 200 mA PW ≤ 10 ms, Duty Cycle ≤ 50 % Total Power Dissipation PT 200 (Total) mW Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. G11259EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan © 1996 µPA672T ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 MIN. TYP. MAX. UNIT 10 µA ±5.0 µA 1.5 V VGS(off) VDS = 3.0 V, ID = 1.0 µA 0.7 |yfs| VDS = 3.0 V, ID = 10 mA 20 Drain to Source On-State Resistance RDS(on)1 VGS = 2.5 V, ID = 10 mA 20 40 Ω Drain to Source On-State Resistance RDS(on)2 VGS = 4.0 V, ID = 10 mA 15 20 Ω VDS = 3.0 V, VGS = 0, f = 1.0 MHz 6 pF Gate Cut-off Voltage Forward Transfer Admittance 1.0 mS Input Capacitance Ciss Output Capacitance Coss 8 pF Reverse Transfer Capacitance Crss 1.2 pF Turn-On Delay Time td(on) 9 ns 50 ns td(off) 20 ns tf 40 ns Rise Time tr Turn-Off Delay Time Fall Time VDD = 3 V, ID = 20 mA, VGS(on) = 3 V, RG = 10 Ω, RL = 120 Ω SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS VGS DUT RL Gate voltage waveform 0 90 % VGS(on) 10 % VDD 90 % ID RG 90 % ID PG. Drain current waveform VGS 0 10 % td(on) τ τ = 1µs Duty Cycle ≤ 1 % 2 0 10 % tr ton td(off) tf toff µPA672T TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Free air 250 4.0 V 80 ID - Drain Current - mA PT - Total Power Dissipation - mW 300 200 150 Pe ro ne To un ta it 100 l 60 2.5 V 40 20 50 0 50 75 100 125 25 TA - Ambient Temperature - ˚C 150 VGS = 2.0 V 0 1 2 3 4 VDS - Drain to Source Voltage - V 100 100 |yfs| - Forward Transfer Admittance - mS VDS = 3 V ID - Drain Current - mA 10 TA = 75 ˚C 25 ˚C 1 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS –25 ˚C 0.1 0.01 0.001 VDS = 3 V TA = –25 ˚C 50 25 ˚C 125 ˚C 20 0 1 1 2 3 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = 2.5 V 50 TA = 75 ˚C 25 ˚C 20 –25 ˚C 10 5 2 1 1 2 5 10 20 ID - Drain Current - mA 50 100 RDS(on) - Drain to Source On-State Resistance - Ω 0 RDS(on) - Drain to Source On-State Resistance - Ω 3.0 V 3.5 V 2 5 10 20 ID - Drain Current - mA 50 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = 4 V 50 TA = 75 ˚C 25 ˚C 20 –25 ˚C 10 5 2 1 1 2 5 10 20 ID - Drain Current - mA 50 100 3 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STAGE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 10 ID = 10 mA Ciss, Coss, Crss, - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω µPA672T ID = 1 mA 10 mA 50 mA 20 10 Ciss 5 Coss 2 1 0.5 Crss 0.2 VGS = 0 f = 1 MHz 0.1 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 1 7 100 100 tr 50 tf 20 td(off) 10 td(on) 5 VDD = 3 V VGS(on) = 3 V RG = 10 Ω 2 1 1 20 50 100 200 ID - Drain Current - mA 500 1000 ISD - Source to Drain Current - mA td(on), tr, td(off), tr - Switching Time - ns 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS 4 2 5 10 20 50 VDS - Drain to Source Voltage - V 10 1 0 0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V 1.0 µPA672T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 µPA672T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11