RENESAS 2SA1977

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DATA SHEET
PRELIMINARY
DATA SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
_0.2
2.8+
High fT
0.4 +0.1
–0.05
•
PACKAGE DIMENSION (in millimeters)
fT = 8.5 GHz TYP.
•
High gain
0.65 +0.1
–0.15
1.5
| S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
Symbol
Rating
Unit
Collector to Base Voltage
VCB0
−20
V
Collector to Emitter Voltage
VCE0
−12
V
Emitter to Base Voltage
VEB0
−3.0
V
Collector Current
IC
−50
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
0.95
0.4 +0.1
–0.05
Marking
0.16 +0.1
–0.06
Parameter
3
1
Test Conditions
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
0.95
Equivalent NPN transistor is the 2SC3583.
2
0.3
High-speed switching characterstics
•
1.1 to 1.4
•
_0.2
2.9+
2
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking; T92
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICB0
VCB = −10 V
−0.1
µA
Emitter Cutoff Current
IEB0
VEB = −1 V
−0.1
µA
DC Current Gain
hFE
VCE = −8 V, IC = −20 mA
20
Gain Bandwidth Product
fT
VCE = −8 V, IC = −20 mA, f = 1 GHz
6.0
Collector Capacitance
Cre*
Insertion Power Gain
| S21e |
Noise Figure
NF
VCB = −10 V, IE = 0, f = 1 MHz
2
VCE = −8 V, IC = −20 mA, f = 1.0 GHz
VCE = −8 V, IC = −3 mA, f = 1 GHz
100
8.5
GHz
0.5
8.0
1
12.0
pF
dB
1.5
3
dB
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
FB
Marking
T92
hFE
20 to 100
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996
2SA1977
SWITCHING CHARACTERISTICS
Symbol
Parameter
Vin = 1 V
Unit
TYP.
Turn-on Delay Time
ton (delay)
1.08
ns
Rise Time
tr
0.66
ns
Turn off Delay Time
toff (delay)
0.32
ns
Fall Time
tf
0.78
ns
SWITCHING TIME MEASUREMENT CIRCUIT
VCC ( – )
Vin
RC2
RC1
20 ns
RL1
RL2
VOUT
Vin
ton (delay)
Sampling
Oscilloscope
RS
50 Ω
VOUT
VSS ( – )
RE
VEE ( + )
Vin = 1 V, VBB = −0.5 V, RC1 = RC2
2
RS
RC
RL1
RL2
RE
VEE
VCC
(Ω)
(Ω)
(Ω)
(Ω)
(Ω)
(V)
(V)
160
1k
200
250
2.7 k
27
26.3
tr
toff (delay)
tr
2SA1977
TYPICAL CHARACTERISTICS
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - mV
400
300
200
100
0
50
100
150
200
TA - Ambient Temperature - ˚C
3
2SA1977
BASE TO EMITTER VOLTAGE vs.
COLLECTOR CURRENT
VBE (ON) - DC Base Voltage - V
–10
VCE = –1 V
–1.0
–0.1
–0.01
–0.1
–1.0
–10
–100
–1000
IC - Collector Current - mA
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
VCE(sat) - Collector Saturation Voltage - V
VBE(sat) - Base Saturation Voltage - V
–10
IC = 10 • IB
VBE (S)
–1.0
VCE (S)
–0.1
–0.01
–0.1
–1.0
–10
IC - Collector Current - mA
4
–100
–1000
2SA1977
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN vs. FREQUENCY
15
10
VCE = –8 V
fT - Gain Bandwidth Product - GHz
|S21e|2- Insertion Power Gain - dB
VCE = –8 V
f = 1 GHz
10
5
0
–1
–10
8
6
4
2
0
–1
–100
–10
IC - Collector Current - mA
IC - Collector Current - mA
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
INSERTION GAIN vs. FREQUENCY
1.5
35
f = 1 MHz
VCE = –8 V
IC = –20 mA
30
|S21e|2- Insertion Power Gain - dB
Cre - Collector Feed-back Capacitance - pF
–100
1
0.5
25
20
15
10
5
0
–5
–10
0
–1
–10
VCB - Collector to Base Voltage - V
–100
–15
0.1
0.2
0.3 0.4 0.5
1.0
2.0
3.0
f - Frequency - GHz
5
2SA1977
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
hFE - DC Current Gain
50
40
30
VCE = –3 V
VCE = –2 V
VCE = –1 V
20
10
1.0
–0.1
–1.0
–10
–100
–1000
IC - Collector Current - mA
DC CURRENT GAIN vs.
COLLECTOR CURRENT
100
VCE = –8 V
hFE - DC Current Gain
50
40
30
20
10
5
4
3
2
1
–0.1
–1.0
–10
IC - Collector Current - mA
6
–100
–1000
2SA1977
S11
VCE = –8 V
IC = –20 mA
3.0 GHZ
0.1 GHZ
S22
VCE = –8 V
IC = –20 mA
3.0 GHZ
0.1 GHZ
7
2SA1977
S-PARAMETER
(VCE = 1 V, IC = 5 mA, Zo = 50 Ω)
f
S21
S11
MAG
ANG
MAG
100
0.553
− 43.7
11.03
200
0.460
− 78.2
300
0.427
400
ANG
S22
MAG
ANG
MAG
ANG
150.
0.423
71.2
0.666
− 25.0
8.780
129.
0.691
59.4
0.696
− 42.2
− 104
7.003
115.
0.857
54.4
0.556
− 52.9
0.393
− 123
5.700
105.
0.983
52.7
0.461
− 59.5
500
0.377
− 138
4.74
97.6
0.109
52.2
0.392
− 64.2
600
0.367
− 149
4.053
91.2
0.120
52.5
0.341
− 67.4
700
0.362
− 159
3.549
85.9
0.131
52.9
0.307
− 70.5
800
0.363
− 168
3.151
61.3
0.143
53.1
0.280
− 73.7
900
0.364
− 175
2.847
77.0
0.154
53.8
0.258
− 76.1
1000
0.365
178
2.603
73.0
0.165
54.0
0.241
− 78.8
1100
0.369
172
2.391
69.3
0.176
54.4
0.227
− 82.0
1200
0.375
166
2.219
66.8
0.188
54.2
0.217
− 84.8
1300
0.376
162
2.070
62.7
0.200
54.4
0.207
− 88.4
1400
0.384
157
1.940
59.4
0.213
54.1
0.200
− 92.0
1500
0.391
153
1.838
56.3
0.225
53.8
0.192
− 94.9
1600
0.399
149
1.744
53.5
0.238
53.4
0.188
− 99.1
1700
0.405
146
1.659
50.8
0.250
52.9
0.184
− 102
1800
0.411
142
1.584
48.2
0.264
52.3
0.184
− 107
1900
0.418
139
1.520
45.6
0.277
51.7
0.182
− 111
2000
0.423
135
1.461
43.1
0.290
51.1
0.181
− 115
2100
0.429
132
1.408
40.9
0.302
50.2
0.180
− 119
2200
0.438
130
1.361
38.6
0.314
49.4
0.182
− 125
2300
0.444
127
1.316
36.4
0.328
48.5
0.181
− 128
2400
0.450
124
1.276
34.2
0.341
47.6
0.187
− 132
2500
0.457
122
1.239
32.3
0.353
46.5
0.188
− 137
8
MHz
S12
2SA1977
S-PARAMETER
(VCE = 3 V, IC = 5 mA, Zo = 50 Ω)
f
S21
S11
MHz
MAG
ANG
100
0.595
− 34.2
200
0.511
− 62.8
300
0.432
− 86.0
MAG
S12
S22
ANG
MAG
ANG
MAG
ANG
154.
0.0328
74.9
0.902
− 19.4
9.618
134.
0.0573
64.8
0.760
− 33.2
11.62
7.920
120.
0.0734
58.5
0.633
− 41.9
6.575
110.
0.0852
57.1
0.542
− 47.3
102.
0.0964
55.9
0.471
− 50.3
400
0.362
− 104
500
0.345
− 119
5.511
600
0.323
− 132
4.749
95.9
0.106
56.4
0.420
− 52.2
700
0.308
− 143
4.177
90.5
0.116
56.6
0.383
− 54.1
800
0.300
− 153
3.712
85.8
0.126
57.1
0.355
− 55.7
900
0.297
− 162
3.359
81.5
0.137
57.3
0.332
− 57.2
1000
0.295
− 170
3.064
77.6
0.147
57.9
0.315
− 58.9
1100
0.297
− 177
2.818
74.0
0.158
57.9
0.299
− 60.6
1200
0.300
176
2.617
70.6
0.169
58.3
0.287
− 62.1
1300
0.303
170
2.439
67.4
0.181
58.1
0.276
− 64.6
1400
0.308
164
2.284
64.2
0.192
58.1
0.266
− 66.5
1500
0.314
160
2.159
61.2
0.203
57.8
0.258
− 68.5
1600
0.322
155
2.046
58.4
0.215
57.5
0.250
− 71.4
1700
0.328
151
1.944
55.7
0.227
57.3
0.243
− 73.6
1800
0.335
147
1.855
53.0
0.240
56.5
0.241
− 76.9
1900
0.341
143
1.774
50.5
0.252
56.1
0.233
− 80.3
2000
0.349
140
1.705
48.1
0.264
55.5
0.230
− 83.1
2100
0.355
136
1.638
45.7
0.276
54.7
0.226
− 86.5
2200
0.364
133
1.583
43.5
0.289
54.2
0.222
− 90.7
2300
0.372
130
1.53
41.2
0.302
53.2
0.218
− 93.6
2400
0.378
128
1.479
39.0
0.314
52.5
0.218
− 97.5
2500
0.386
125
1.439
37.0
0.326
51.7
0.215
− 101.
9
2SA1977
S-PARAMETER
(VCE = 8 V, IC = 5 mA, Zo = 50 Ω)
f
S21
S11
MHz
MAG
ANG
100
0.679
200
300
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
− 27.6
11.75
156.
0.0289
76.9
0.918
− 15.9
0.586
− 51.4
10.01
138.
0.0508
66.6
0.802
− 27.7
0.491
− 71.0
8.453
124.
0.0670
61.8
0.690
− 35.3
400
0.417
− 87.3
7.152
114.
0.0780
58.9
0.603
− 39.9
500
0.362
− 100
6.040
106.
0.0886
58.3
0.534
− 42.5
600
0.323
− 113
5.245
99.6
0.0984
57.9
0.485
− 44.0
700
0.293
− 124
4.627
94.2
0.107
58.0
0.448
− 45.5
800
0.274
− 135
4.124
89.4
0.117
58.4
0.419
− 46.6
900
0.261
− 145
3.734
85.0
0.126
58.6
0.396
− 47.7
1000
0.251
− 154
3.419
81.2
0.135
59.4
0.377
− 48.8
1100
0.247
− 162
3.150
77.6
0.145
59.6
0.361
− 50.2
1200
0.245
− 170
2.919
74.2
0.155
59.6
0.350
− 51.4
1300
0.245
− 177
2.720
71.0
0.166
59.8
0.339
− 53.2
1400
0.247
175
2.551
67.8
0.176
59.9
0.327
− 54.6
1500
0.251
169
2.410
64.8
0.187
59.7
0.320
− 56.1
1600
0.258
164
2.283
62.1
0.198
59.5
0.311
− 58.2
1700
0.263
159
2.169
59.3
0.209
59.4
0.305
− 59.8
1800
0.269
154
2.067
56.7
0.221
58.9
0.299
− 62.4
1900
0.276
150
1.977
54.4
0.232
58.6
0.292
− 64.9
2000
0.283
146
1.898
51.8
0.243
58.1
0.287
− 67.0
2100
0.290
142
1.824
49.5
0.256
57.5
0.283
− 69.6
2200
0.298
138
1.762
47.2
0.267
57.0
0.277
− 72.9
2300
0.307
135
1.701
44.9
0.279
56.1
0.272
− 75.1
2400
0.314
132
1.645
42.8
0.291
55.4
0.270
− 78.7
2500
0.321
129
1.597
40.6
0.304
54.7
0.264
− 81.3
10
2SA1977
S-PARAMETER
(VCE = 8 V, IC = 20 mA, Zo = 50 Ω)
f
S21
S11
MHz
MAG
ANG
MAG
100
0.310
− 47.6
20.39
200
0.243
− 82.1
300
0.205
400
S12
ANG
S22
MAG
ANG
MAG
ANG
144.
0.0218
77.0
0.798
− 25.2
14.87
123.
0.0375
72.7
0.611
− 37.8
− 107
11.25
111.
0.0514
71.4
0.488
− 43.1
0.165
− 125
8.95
102.
0.0643
71.6
0.417
− 45.1
500
0.172
− 140
7.329
96.6
0.0777
71.5
0.365
− 45.7
600
0.169
− 153
6.232
91.6
0.0909
71.5
0.331
− 45.8
700
0.166
− 163
5.414
87.5
0.104
71.0
0.308
− 46.5
800
0.169
− 173
4.778
83.5
0.117
70.6
0.289
− 47.3
900
0.172
179
4.3
80.2
0.130
70.0
0.274
− 47.9
1000
0.176
172
3.902
77.1
0.143
69.3
0.262
− 49.1
1100
0.182
166
3.576
74.1
0.156
68.6
0.251
− 50.4
1200
0.188
160
3.310
71.2
0.169
67.7
0.244
− 51.5
1300
0.194
156
3.080
68.7
0.182
66.7
0.235
− 53.7
1400
0.202
151
2.875
66.0
0.195
66.0
0.227
− 55.6
1500
0.209
147
2.711
63.4
0.208
64.9
0.221
− 57.0
1600
0.217
144
2.564
61.0
0.221
63.9
0.213
− 59.5
1700
0.224
140
2.431
58.6
0.234
62.8
0.209
− 61.7
1800
0.233
137
2.315
56.4
0.247
61.7
0.204
− 64.7
1900
0.240
134
2.212
54.2
0.259
60.8
0.197
− 67.9
2000
0.247
132
2.123
52.0
0.272
59.8
0.193
− 70.0
2100
0.255
129
2.037
49.8
0.284
58.3
0.188
− 73.3
2200
0.263
126
1.965
47.7
0.296
57.2
0.183
− 77.5
2300
0.272
124
1.896
45.7
0.309
56.1
0.179
− 80.1
2400
0.278
122
1.833
43.7
0.321
54.8
0.177
− 84.0
2500
0.286
120
1.778
41.7
0.332
53.7
0.171
− 87.7
11
2SA1977
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use of
such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard”, “Special”, and “Specific”. The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of a
device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard : Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:
Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard” unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they
should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11