2SJ353 DS - Renesas Electronics

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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Notice
1.
2.
3.
4.
5.
6.
7.
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“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ353
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SJ353 is a P-channel MOS FET of a vertical type and is
PACKAGE DIMENSIONS (in mm)
a switching element that can be directly driven by the output of an
7.0 MAX.
This product has a low ON resistance and superb switching
0.8 ±0.1
FEATURES
0.6 ±0.1
12.0 MIN.
converters.
3.0 MAX.
characteristics and is ideal for driving the actuators and DC/DC
0.6 ±0.1
0.6 ±0.1
• Radial taping supported
9.0 MAX.
1.2
2.0
IC operating at 5 V.
• Can be directly driven by output of 5-V IC
1.7
1.7
RDS(on) = 0.37 Ω MAX. @VGS = –10 V, ID = –1.0 A
GD S
1.5
RDS(on) = 0.68 Ω MAX. @VGS = –4 V, ID = –0.8 A
0.55 ±0.1
4.0 MAX.
• Low ON resistance
EQUIVALENT CIRCUIT
Drain (D)
Internal
diode
Gate (G)
Gate
protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
–60
V
Gate to Source Voltage
VGSS
VDS = 0
±20/+10
V
Drain Current (DC)
ID(DC)
±1.5
A
Drain Current (Pulse)
ID(pulse)
±3.0
A
Total Power Dissipation
PT
1.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Document No. D11216EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PW ≤ 10 ms,
Duty cycle ≤ 1 %
©
1996
2SJ353
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = –60 V, VGS = 0
–10
µA
Gate Leakage Current
IGSS
VGS = –16/+10 V, VDS = 0
±10
µA
Gate Cut-Off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–2.0
V
Forward Transfer Admittance
|yfs|
VDS = –10 V, ID = –1.0 A
1.0
Drain to Source On-State Resistance
RDS(on)1
VGS = –4 V, ID = –0.8 A
0.58
0.68
Ω
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –1.0 A
0.33
0.37
Ω
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
320
pF
Output Capacitance
Coss
f = 1.0 MHz
200
pF
Reverse Transfer Capacitance
Crss
70
pF
Turn-On Delay Time
td(on)
VDD = –30 V, ID = –1.0 A
5
ns
tr
VGS(on) = –10 V,
15
ns
40
ns
20
ns
Rise Time
2
SYMBOL
Turn-Off Delay Time
td(off)
Fall Time
tf
RG = 10 Ω, RL = 30 Ω
–1.6
S
2SJ353
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD
BIAS SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
–10
–5
80
1
ID - Drain Current - A
dT - Derating Factor - %
100
60
40
10
–2
PW
–1
m
s
m
s
=
10
0
m
s
–0.5
DC
20
–0.2
0
30
60
90
120
TA - Ambient Temperature - ˚C
Single pulse
–0.1
–1
–2
–5
–10
–20
–50
VDS - Drain to Source Voltage - V
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–100
TRANSFER CHARACTERISTICS
–5
–10
VDS = 10 V
–4.0
ID - Drain Current - A
V
.5
–4
0V
–3
–1
ID - Drain Current - A
–4
V
–3.5 V
–2
TA = 75 ˚C
25 ˚C
–25 ˚C
–0.1
–0.01
–3.0 V
–1
–1
–2.5 V
VGS = –2.0 V
0
–1
–2
–3
–4
VDS - Drain to Source Voltage - V
–5
|yfs| - Forward Transfer Admittance - S
10
RDS(on) - Drain to Source On-State Resistance - Ω
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = –10 V
1
TA = –25 ˚C
25 ˚C
75 ˚C
0.1
0.01
–0.001
–0.01
–0.1
ID - Drain Current - A
–0.001
–0.5
–1
–1
–1.5
–2 –2.5
–3
–3.5
VGS - Gate to Source Voltage - V
–4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.4 VGS = –4 V
1.2
1
0.8
0.6
TA = 75 ˚C
25 ˚C
–25 ˚C
0.4
0.2
0
–0.01
–0.1
–1
ID - Drain Current - A
–10
3
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1
VGS = –10 V
0.8
0.6
TA = 75 ˚C
0.4
25 ˚C
–25 ˚C
0.2
0
–0.01
–0.1
–1
ID - Drain Current - A
RDS(on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-State Resistance - Ω
2SJ353
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1
0.8
ID = –0.8 A
0.6
–1.0 A
0.4
0.2
0
–10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
500
Ciss
200
Coss
100
50
Crss
VGS = 0
f = 1 MHz
–10
–20
–50
–2
–5
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10
ISD - Diode Forward Current - A
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
100
10
–1
–1
–0.1
–0.01
–0.001
0.2
4
–20
SWITCHING CHARACTERISTICS
1 000
20
–4
–8
–12
–16
VGS - Gate to Source Voltage - V
1.2
0.4
0.6
0.8
1
VSD - Source to Drain Voltage - V
–100
tf
td(off)
50
tf
20
10
td(on)
5
VDD = –30 V
VGS(on) = –10 V
RG = 10 Ω
2
1
–0.1
–0.2
–0.5
–1
–2
ID - Drain Current - A
–5
–10
2SJ353
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
2SJ353
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2