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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 15.0 mΩ MAX. (VGS = 10 V, ID = 15 A) • Low QGD: QGD = 2.8 nC TYP. • 4.5 V drive available (TO-251) ORDERING INFORMATION PART NUMBER <R> 2SK4057(1)-S27-AY 2SK4057-ZK-E1-AY 2SK4057-ZK-E2-AY PACKAGE Note Note Note TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 25 Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±30 A ID(pulse) ±100 A Total Power Dissipation (TC = 25°C) PT1 19 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 V Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 17 A Single Avalanche Energy Note2 EAS 28.9 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 12 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18034EJ2V0DS00 (2nd edition) Date Published March 2007 NS CP(K) Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 2SK4057 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 25 V, VGS = 0 V 10 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.1 2.5 V | yfs | VDS = 10 V, ID = 7.5 A 5 9.4 RDS(on)1 VGS = 10 V, ID = 15 A 11.4 15.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 15 A 18.5 25.0 mΩ Ciss VDS = 10 V 720 pF Coss VGS = 0 V 210 pF 90 pF VDD = 12 V, ID = 15 A 7.1 ns VGS = 10 V 3.3 ns 23 ns 5.1 ns Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time td(off) Fall Time f = 1 MHz RG = 3 Ω tf S Total Gate Charge QG VDD = 12 V 14.5 nC Gate to Source Charge QGS VGS = 12 V 1.9 nC 2.8 nC 3.4 Ω Gate to Drain Charge QGD Gate Resistance ID = 30 A RG Body Diode Forward Voltage Note VF(S-D) IF = 30 A, VGS = 0 V 0.95 Reverse Recovery Time trr IF = 30 A, VGS = 0 V 26 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 22 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS VDS ID Starting Tch τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 RL VDD Data Sheet D18034EJ2V0DS td(on) tr ton td(off) tf toff 2SK4057 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 20 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 15 10 5 0 0 0 25 50 75 100 125 150 0 175 25 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs CASE TEMPERATURE 35 1000 30 ID(pulse) 100 ID – Drain Current - A P/W = 100 μs ID(DC) 10 1 ms RDS(on) Limited (VGS =10 V) 10 ms Power Dissipation 1 25 20 15 10 5 TC = 25°C Single pulse 0 0.1 0.1 1 10 0 100 50 100 150 200 TC - Case Temperature - °C VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 50 1000 Rth(ch-A) = 125°C/W 100 Rth(ch-C) = 6.58°C/W 10 1 Single Pulse 0.1 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width – s Data Sheet D18034EJ2V0DS 3 2SK4057 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 VGS = 10 V 50 4.5 V Tch = −55°C −25°C 25°C 50°C 75°C 125°C 150°C Tc h= 55 10 ID - Drain Current - A ID - Drain Current - A 100 1 0.1 0.01 VDS = 10 V Pulsed Pulsed 0.001 0 0 1 2 3 0 4 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 2 1.5 1 0.5 0 RDS(on) - Drain to Source On-state Resistance - mΩ 4 -25 25 75 125 100 3 4 5 Tch = −55°C −25°C 25°C 50°C 75°C 125°C 150°C 10 1 VDS = 10 V Pulsed 0.1 0.1 175 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 VGS = 4.5 V 20 10 10 V 0 1 10 100 ID - Drain Current - A 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA -75 2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 2.5 1 VGS - Gate to Source Voltage - V 50 Pulsed 45 40 ID = 30 A 35 15 A 30 6A 25 20 15 10 5 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D18034EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 35 10000 Ciss, Coss, Crss - Capacitance - pF 30 VGS = 4.5 V 25 10 V 20 15 10 ID= 15 A Pulsed 5 Coss 100 Crss VGS = 0 V f = 1 MHz 0 10 -75 -25 25 75 125 175 0.1 SWITCHING CHARACTERISTICS 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 25 V DD = 12 V V GS = 10 V RG = 3 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 1 VDS - Drain to Source Voltage - V Tch - Channel Temperature - °C td(of f ) 10 td( on) tf tr 0.1 1 10 12 ID = 30 A 20 8 6 10 4 5 2 VDS 0 100 0 0 5 10 15 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns 1000 VGS = 10 V 4.5 V 10 VGS 15 ID - Drain Current - A 100 10 VDD = 20 V 12 V 1 IF - Diode Forward Current - A Ciss 1000 0V 1 0.1 Pulsed di/dt = 100 A/μs VGS = 0 V 100 10 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D18034EJ2V0DS 5 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On - State Resistance - mΩ 2SK4057 2SK4057 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 120 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IAS = 17 A EAS = 28.9 mJ 10 VDD = 12 V VGS = 20 → 0 V RG = 25 Ω Starting Tch = 25°C 1 0.01 80 60 40 20 0 0.1 1 10 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 VDD = 12 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 17 A 100 Data Sheet D18034EJ2V0DS 2SK4057 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3ZK) 1.06 TYP. 1) TO-251 (MP-3-b) 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 0.76±0.12 4.0 MIN. 0.5±0.1 1 2 1.14 MAX. 3 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 TYP. No Plating 0.51 MIN. 1.14 MAX. 0.8 3 4.13 TYP. 2 1.1±0.13 1 0.5±0.1 4 11.25 TYP. 6.1±0.2 4 2.3±0.1 1.0 TYP. 5.3 TYP. 2.3±0.1 6.1±0.2 10.4 MAX. (9.8 TYP.) 6.6±0.2 2.3 2.3 TYP. 1.04 TYP. <R> 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Data Sheet D18034EJ2V0DS 7 2SK4057 • The information in this document is current as of March, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). 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