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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3715 Isolated TO-220 FEATURES • Super low on-state resistance (Isolated TO-220) RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4 V, ID = 38 A) • Low C iss: C iss = 8400 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±75 A ID(pulse) ±300 A Total Power Dissipation (TC = 25°C) PT1 40 W Total Power Dissipation (TA = 25°C) PT2 2.0 W Channel Temperature Tch 150 °C Tstg −55 to +150 °C IAS 67 A EAS 450 mJ Drain Current (pulse) Note1 Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16378EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3715 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 38 A 33 65 RDS(on)1 VGS = 10 V, ID = 38 A 4.8 6.0 mΩ RDS(on)2 VGS = 4 V, ID = 38 A 6.1 9.5 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 8400 pF Output Capacitance Coss VGS = 0 V 1200 pF Reverse Transfer Capacitance Crss f = 1 MHz 530 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 38 A 24 ns VGS = 10 V 15 ns RG = 0 Ω 116 ns 11 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 48 V 145 nC Gate to Source Charge QGS VGS = 10 V 21 nC QGD ID = 75 A 39 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 75 A, VGS = 0 V 0.92 Reverse Recovery Time trr IF = 50 A, VGS = 0 V 59 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 136 nC 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D16378EJ2V0DS td(on) ton tf toff 2SK3715 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(pulse) 100 10 ID(DC) RDS(on) Limited (at VGS = 10 V) DC PW = 100 µs 1 ms 10 ms 1 0.1 Single pulse TC = 25°C 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 62.5°C/W 10 Rth(ch-C) = 3.13°C/W 1 0.1 Single pulse 0.01 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D16378EJ2V0DS 3 2SK3715 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 1000 350 V DS = 10 V Pulsed Pulsed 100 ID - Drain Current - A ID - Drain Current - A 300 V GS = 10 V 250 200 150 4.0 V 100 10 T ch = 150°C 85°C 25°C −55°C 1 0.1 0.01 50 0 0.001 0 0.5 1 1.5 2 0 2.5 VDS - Drain to Source Voltage - V 2 1.5 1 0.5 0 25 50 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 2.5 0 10 V DS = 10 V Pulsed 1 0.1 16 14 12 10 V GS = 4.0 V 6 10 V 2 0 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ Pulsed 18 1 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 ID - Drain Current - A 4 1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 5 T ch = −50°C 25°C 85°C 150°C Tch - Channel Temperature - °C 8 4 100 75 100 125 150 175 20 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V DS = 10 V ID = 1 m A -75 -50 -25 2 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 1 Pulsed 8 6 ID = 38 A 4 2 0 0 10 VGS - Gate to Source Voltage - V Data Sheet D16378EJ2V0DS 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 12 10000 ID = 38 A Pulsed Ciss, Coss, Crss - Capacitance - pF 10 V GS = 4 V 8 6 10 V 4 2 0 C iss C oss 1000 C rss VGS = 0 V f = 1 MHz 100 -50 -25 0 25 50 75 100 125 150 0.1 1 Tch - Channel Temperature - °C DYNAMIC INPUT/OUTPUT CHARACTERISTICS V DD = 30 V V GS = 10 V RG = 0 Ω VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 td(off) td(on) 10 tr tf 50 10 45 9 40 8 V DD = 48 V 30 V 12 V 35 30 V GS 7 6 25 5 20 4 15 3 10 2 V DS 5 ID = 7 5 A 0 1 0.1 1 10 100 1 0 0 20 40 60 80 100 120 140 160 QG - Gate Charge - nC ID - Drain Current - A SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 10 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3715 V GS = 10 V 100 4V 10 0V 1 0.1 di/dt = 50 A/µs V GS = 0 V 100 Pulsed 10 0.01 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V 0.1 1 10 100 IF - Diode Forward Current - A Data Sheet D16378EJ2V0DS 5 2SK3715 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 IA S = 6 7 A EAS = 450 m J 10 VDD = 30 V R G = 25 Ω VGS = 20 → 0 V S ta rtin g T c h = 2 5 °C S in g le p u ls e 80 60 40 20 1 10 µ 100 µ 0 1m 10 m L - Inductive Load - H 6 V DD = 30 V R G = 25 Ω V GS = 20 → 0 V I AS ≤ 67 A 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C Data Sheet D16378EJ2V0DS 2SK3715 PACKAGE DRAWING (Unit: mm) Isolated TO-220 (MP-45F) 4.5 ±0.2 4 ±0.2 0.7 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 2.54 2.7 ±0.2 12.0 ±0.2 3 ±0.1 φ 3.2 ±0.2 13.5 MIN. 15.0 ±0.3 10.0 ±0.3 2.5 ±0.1 0.65 ±0.1 1. Gate 2. Drain 3. Source 1 2 3 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D16378EJ2V0DS 7 2SK3715 • The information in this document is current as of August, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1