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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP22N055HHE, NP22N055IHE, NP22N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect PART NUMBER Transistors designed for high current switching NP22N055HHE applications. NP22N055IHE FEATURES Note NP22N055SHE • Channel temperature 175 degree rated PACKAGE TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z TO-252 (JEDEC) / MP-3ZK Note Not for new design. • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 11 A) • Low Ciss : Ciss = 590 pF TYP. • Built-in gate protection diode (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 55 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) ±22 A A Note1 ID(pulse) ±55 Total Power Dissipation (TA = 25°C) PT 1.2 W Total Power Dissipation (TC = 25°C) Drain Current (Pulse) PT 45 W Single Avalanche Current Note2 IAS 13 / 5 A Single Avalanche Energy Note2 EAS 16 / 25 mJ Channel Temperature Tch 175 °C Storage Temperature Tstg –55 to +175 °C (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω , VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 3.33 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14135EJ4V0DS00 (4th edition) Date Published July 2005 NS CP(K) Printed in Japan The mark shows major revised points. 1999, 2005 NP22N055HHE, NP22N055IHE, NP22N055SHE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(th) VDS = VGS, ID = 250 µA 4.0 V | yfs | VDS = 10 V, ID = 11 A RDS(on) VGS = 10 V, ID = 11 A 30 39 mΩ Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note 2.0 3.0 4 8 S Input Capacitance Ciss VDS = 25 V 590 890 pF Output Capacitance Coss VGS = 0 V 110 170 pF Reverse Transfer Capacitance Crss f = 1 MHz 52 94 pF Turn-on Delay Time td(on) VDD = 28 V, ID = 11 A 11 24 ns VGS = 10 V 6.0 15 ns RG = 1 Ω 25 49 ns 6.6 17 ns 18 nC Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 44 V 12 Gate to Source Charge QGS VGS = 10 V 3 nC QGD ID = 22 A 5 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 22 A, VGS = 0 V 1.0 V trr IF = 22 A, VGS = 0 V 35 ns Qrr di/dt = 100A/µs 42 nC Reverse Recovery Time Reverse Recovery Charge Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D14135EJ4V0DS td(on) ton tf toff NP22N055HHE, NP22N055IHE, NP22N055SHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 70 100 80 60 40 20 0 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 0 25 TC - Case Temperature - ˚C ID(pulse) ID(DC) s =1 0µ 10 1m Po DC Lim wer ite Dis d sip ati PW Single Pulse Avalanche Energy - mJ 10 s 0µ s on 1 TC = 25˚C Single Pulse 0.1 0.1 1 100 125 150 175 200 30 25 25 mJ 20 10 5 0 25 10 100 IAS = 5 A 13 A 16 mJ 15 50 75 100 125 150 175 Starting Tch - Starting Channel Temperature - ˚C VDS - Drain to Source Voltage - V Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 1000 d ite ) im 0 V )L 1 n o = S( S RD t VG (a 75 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Figure3. FORWARD BIAS SAFE OPERATING AREA 100 50 TC - Case Temperature - ˚C Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 3.33 ˚C/W 1 0.1 0.01 10 µ Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D14135EJ4V0DS 3 NP22N055HHE, NP22N055IHE, NP22N055SHE Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 60 Pulsed Pulsed ID - Drain Current - A ID - Drain Current - A 50 10 TA = −40˚C 25˚C 75˚C 150˚C 175˚C 1 0.1 VGS =10 V 40 30 20 10 VDS = 10 V 0 | yfs | - Forward Transfer Admittance - S Pulsed VDS = 10 V 10 TA = 175˚C 75˚C 25˚C −40˚C 1 0.1 0.01 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 4 Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 70 60 50 40 30 VGS = 10 V 20 10 0 0.1 1 10 2 3 4 VDS - Drain to Source Voltage - V Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 1 0 6.0 100 RDS(on) - Drain to Source On-state Resistance - mΩ 2.0 3.0 4.0 5.0 VGS - Gate to Source Voltage - V VGS(th) - Gate to Source Threshold Voltage - V 0.01 1.0 Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 60 50 40 ID = 11 A 30 20 10 0 5 0 10 15 20 VGS - Gate to Source Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VDS = VGS ID = 250 µA 4.0 3.0 2.0 1.0 0 −50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D14135EJ4V0DS Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 90 100 ISD - Diode Forward Current - A 80 70 60 VGS = 10 V 40 30 20 10 ID = 11 A 0 −50 50 0 100 Pulsed VGS = 10 V 10 VGS = 0 V 1 0.1 0.01 0 150 0.5 Tch - Channel Temperature - ˚C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 0 V f = 1 MHz 1000 Coss Crss 10 0.1 1 10 1000 100 tf td(off) td(on) 10 tr 1 0.1 100 100 ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 di/dt = 100 A/µs VGS = 0 V 100 10 VDS - Drain to Source Voltage - V 80 1000 trr - Reverse Recovery Time - ns 10 1 VDS - Drain to Source Voltage - V 1 0.1 1.5 Figure15. SWITCHING CHARACTERISTICS Ciss 100 1.0 VSD - Source to Drain Voltage - V 14 60 10 100 VGS 10 8 40 6 20 4 VDS 2 ID = 22 A 0 1.0 12 VDD = 44 V 28 V 11 V 0 2 4 6 8 10 12 14 VGS - Gate to Source Voltage - V 50 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ NP22N055HHE, NP22N055IHE, NP22N055SHE 16 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D14135EJ4V0DS 5 NP22N055HHE, NP22N055IHE, NP22N055SHE PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (JEITA) / MP-3Z 2.3±0.2 5.0±0.2 IG 0.8 MAX. 2.3 TYP. 0.8 TYP. 1. Gate 2. Drain 3. Source 4. Fin (Drain) N O 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 TYP. 2.3 TYP. 0.9 MAX. O 1.1±0.2 2.3 TYP. 0.75 TYP. 2.3 TYP. 0.5+0.2 −0.1 3 T F 0.5+0.2 −0.1 2 2.0 MIN. 1 0.8 TYP. 1.1±0.2 5.5±0.2 4.3 MAX. 13.7 MIN. 3 7.0 MIN. 2 R N EW D ES 4 5.5±0.2 1.6±0.2 1 0.5±0.1 N 0.5±0.1 4 10.0 MAX. 5.0±0.2 2.3±0.2 6.5±0.2 1.5+0.2 −0.1 1.5+0.2 −0.1 6.5±0.2 1.0 MIN. 1.8 TYP. 1) TO-251 (JEITA) / MP-3 3) TO-252 (JEDEC) / MP-3ZK 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 1.14 MAX. 3 Gate No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 EQUIVALENT CIRCUIT Drain 0.51 MIN. 2 0.8 1 6.1±0.2 10.4 MAX. (9.8 TYP.) 4.0 MIN. 4 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Gate Protection Diode 1.0 Body Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14135EJ4V0DS NP22N055HHE, NP22N055IHE, NP22N055SHE • The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1